The present invention provides a
semiconductor structure and a manufacture method thereof. The manufacture method of the
semiconductor structure comprises: providing a first
wafer and a second
wafer, the first
wafer being provided with a first
metal layer, the second layer being provided with a second
metal layer; forming a first material layer at the surface of the first wafer; forming a second material layer at the surface of the second wafer; performing alignment
processing and bonding
processing of the first wafer and the second wafer to align the first material layer with the second material layer and contact the surface of the first material layer with the surface of the second material layer; performing
heat processing of the first material layer and the second material after the bonding
processing to mutually fuse the first material layer and the second layer so that the alignment precision between the first
metal layer and the second layer is improved. The
surface tension generated by mutually fusing the first material layer and the second material layer is employed to get close the first material layer to the second material layer, so that the alignment precision between the first metal layer and the second layer is improved and the bonding offset is decreased.