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204results about How to "Avoid electrical connection" patented technology

Isolating pillar, manufacturing method of isolating pillar, display panel and display device

The invention provides an isolating pillar, a manufacturing method of the isolating pillar, a display panel and a display device and relates to the field of display technologies. The problem that every two adjacent strip-shaped electrodes in a plurality of first strip-shaped electrodes formed by an existing isolating pillar are likely to be connected is solved. The isolating pillar comprises a first material pattern and a second material pattern located on the first material pattern. The first material pattern comprises an upper surface, a lower surface, a first isolating side face and a second isolating side face, wherein the upper surface is opposite to the lower surface, and the first isolating side face and the second isolating side face are opposite and are located between the upper surface and the lower surface. The second material pattern comprises an upper surface and a lower surface which are opposite to each other, the upper surface of the first material pattern makes direct contact with the lower surface of the second material pattern, and the projections, in the plane where the lower surface of the second material pattern is located, of the first isolating side face and the second isolating side face of the first material pattern are located among edges of the lower surface of the second material pattern. The isolating pillar is applied to the PMOLED display panel and a manufacturing method thereof.
Owner:BOE TECH GRP CO LTD

Semiconductor structure and manufacture method thereof

The present invention provides a semiconductor structure and a manufacture method thereof. The manufacture method of the semiconductor structure comprises: providing a first wafer and a second wafer, the first wafer being provided with a first metal layer, the second layer being provided with a second metal layer; forming a first material layer at the surface of the first wafer; forming a second material layer at the surface of the second wafer; performing alignment processing and bonding processing of the first wafer and the second wafer to align the first material layer with the second material layer and contact the surface of the first material layer with the surface of the second material layer; performing heat processing of the first material layer and the second material after the bonding processing to mutually fuse the first material layer and the second layer so that the alignment precision between the first metal layer and the second layer is improved. The surface tension generated by mutually fusing the first material layer and the second material layer is employed to get close the first material layer to the second material layer, so that the alignment precision between the first metal layer and the second layer is improved and the bonding offset is decreased.
Owner:SEMICON MFG INT (SHANGHAI) CORP
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