The present invention provides a 
semiconductor structure and a manufacture method thereof. The manufacture method of the 
semiconductor structure comprises: providing a first 
wafer and a second 
wafer, the first 
wafer being provided with a first 
metal layer, the second layer being provided with a second 
metal layer; forming a first material layer at the surface of the first wafer; forming a second material layer at the surface of the second wafer; performing alignment 
processing and bonding 
processing of the first wafer and the second wafer to align the first material layer with the second material layer and contact the surface of the first material layer with the surface of the second material layer; performing 
heat processing of the first material layer and the second material after the bonding 
processing to mutually fuse the first material layer and the second layer so that the alignment precision between the first 
metal layer and the second layer is improved. The 
surface tension generated by mutually fusing the first material layer and the second material layer is employed to get close the first material layer to the second material layer, so that the alignment precision between the first metal layer and the second layer is improved and the bonding offset is decreased.