Efficient GaN-based LED coupled to plasmon and manufacturing method thereof

A plasma and exciton technology, applied in electrical components, semiconductor devices, circuits, etc., can solve problems such as influence, improve near-field coupling efficiency, improve SPP wavelength excitation consistency and controllability, and improve device internal quantum The effect of efficiency

Inactive Publication Date: 2014-12-17
TIANJIN POLYTECHNIC UNIV
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Problems solved by technology

However, the disadvantage of using metal nanoparticles to enhance the luminous efficiency of GaN-LEDs is that this metho...

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  • Efficient GaN-based LED coupled to plasmon and manufacturing method thereof
  • Efficient GaN-based LED coupled to plasmon and manufacturing method thereof

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Embodiment Construction

[0029] In order to achieve the above object, the technical scheme adopted in the present invention is:

[0030] A high-efficiency GaN-based LED coupled with plasmons (as attached figure 1 Shown), its preparation method specifically comprises the following steps:

[0031] (1) The GaN-based LED is grown on a sapphire substrate by metal-organic chemical vapor deposition;

[0032] (2) In an environment of 550°C, grow a GaN nucleation layer with a thickness between 23nm and 27nm on a sapphire substrate;

[0033] (3) Raise the temperature to 1020°C, and grow a GaN undoped layer and an n-type GaN layer with a thickness between 1900nm and 2100nm, respectively;

[0034] (4) Lower the temperature to 770°C and re-grow InGaN / GaN multiple quantum wells with a cycle number of 4-6;

[0035] (5) Raise the temperature to 970°C, and re-grow a p-type GaN ohmic contact layer with a thickness between 27nm and 33nm;

[0036] (6) On the p-type GaN, an Ag layer is prepared by using an electron be...

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Abstract

The invention belongs to the technical field of microelectronics and optoelectronics and relates to an efficient GaN-based LED coupled to a plasmon and a manufacturing method thereof. The efficient GaN-based LED comprises a sapphire substrate, a GaN nucleating layer, a GaN undoped layer, an n-type GaN layer, InGaN/GaN multiple quantum wells, a p-type GaN ohmic contact layer, an Ag photonic crystal layer and a p-type GaN doped layer. Gaps of Ag photonic crystal are filled with p-type GaN. One electrode P and one electrode N are provided. The efficient GaN-based LED is manufactured by a MOCVD (metal organic chemical vapor deposition) technology and a micro-nano machining technology, and luminous efficiency of a device is enhanced by local coupling of SPP (surface plasmon polartions) leak mode and near field of the metal photonic crystal.

Description

technical field [0001] The invention relates to the technical fields of microelectronics and optoelectronics, in particular to a GaN-based LED with high photoelectric conversion efficiency and a manufacturing method thereof. The invention utilizes the plasmon polariton (Surface Plasmon Polaritcn, SPP) mode coupling of the two-dimensional metallic Ag photonic crystal to enhance the luminous efficiency of the GaN-based light-emitting diode. Background technique [0002] III-V compound semiconductor materials are widely used in the field of light emission, and GaN has been identified as one of the best materials for making high-efficiency light-emitting diodes. With the rapid development of the semiconductor lighting industry, the demand for high-efficiency LED chips continues to grow, and further improving the luminous efficiency of GaN-LEDs is still a hot issue in the scientific community. Among the many ways to enhance the luminous efficiency of LEDs, the use of surface pla...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/02H01L33/32H01L33/00
CPCH01L33/06H01L33/0075H01L33/02H01L33/32H01L2933/0008H01L2933/0066
Inventor 刘宏伟刘春影杨华杨广华阚强陈弘达
Owner TIANJIN POLYTECHNIC UNIV
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