Method for improving photolithography exposure energy homogeneity using grey level compensation

A technology of exposure energy and uniformity, which is applied in the field of exposure energy uniformity correction of maskless lithography machines, can solve difficult problems such as light energy utilization rate and light uniformity, design, processing requirements and difficulty, etc., to achieve Effects of shortened modulation, simple control method, and reduced manufacturing cost

Inactive Publication Date: 2008-07-23
HEFEI ADVANTOOLS SEMICON
View PDF0 Cites 63 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The lighting system of the existing lithography machine usually requires the uniformity of the light field to be within 1%. The design and processing requirements and difficulty are very strict. It is difficult to meet the requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving photolithography exposure energy homogeneity using grey level compensation
  • Method for improving photolithography exposure energy homogeneity using grey level compensation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] As shown in Figure 1, the light emitted by the illumination source 1 is converged and homogenized by the condenser lens system 2, and then incident on the spatial light modulator 3 at an angle of θ (the spatial light modulator in this figure is DMD as an example, and it can also be LCD and other light modulation devices), the incident light is imaged on the CCD6 through the telecentric imaging system 4 and 5 after being modulated by the spatial light modulator, so that the CCD can collect the light field intensity distribution of the image plane.

[0024] As shown in Figures 1 and 2, the concrete implementation steps of the present invention are as follows:

[0025] (1) The spatial light modulator 3 is placed in a fully open state, and the light emitted by the illumination source 1 is converged and homogenized by the condenser lens system and then irradiates the spatial light modulator 3 . The spatial light modulator 3 modulates the incident light and images it on the C...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for using gray scale compensation to improve photo-etching exposure energy uniformity, with wide application in non-mask photo-etching machine which uses spatial light modulator as image generator. The non-mask photo-etching machine provided with a spatial light modulator as image generator uses the gray scale modulation of the spatial light modulator, according to the image light strength distribution information of photo-etching objective lens collected by a CCD to modulate the light output of each pixel unit of the spatial light modulator to change the emission light field distribution on the image plane of the photo-etching objective lens. The invention uses the light strength distribution measured in the integration of some time or uses the energy distribution of the light emitted from each image plane position in a certain exposure time to make the exposure energy of each position uniform on the image plane. The invention can effectively reduce the design and assembly hardness of the lighting system of traditional photo-etching machine and reach better exposure energy uniformity.

Description

technical field [0001] The invention belongs to a method for correcting the uniformity of exposure energy of a photolithography machine, in particular to a method for correcting the uniformity of exposure energy of a maskless photolithography machine using a spatial light modulator. Background technique [0002] Photolithography is used to print characteristic patterns on the surface of substrates, such as substrates used in the manufacture of semiconductor devices, various integrated circuits, flat-panel displays (such as liquid crystal displays), circuit boards, biochips, micromechanical Substrates for electronic chips, optoelectronic circuit chips, etc. Often used substrates are semiconductor wafers or glass substrates with light-sensitive media on the surface. [0003] During lithography, a wafer is placed on a wafer stage, and a pattern of features is projected onto the wafer surface by an exposure device within the lithography apparatus. Although projection optics ar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F7/20
Inventor 陈明勇张放心王骥汪飞燕
Owner HEFEI ADVANTOOLS SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap