90 results about "Optical emission spectroscopy" patented technology

A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and / or hydrogen containing low k dielectric materials.

A hand-held, self-contained, battery-powered test instrument for analyzing composition of a sample includes an exciter for exciting at least a portion of the sample, a compact cross-dispersed spectrometer for receiving an optical signal from the excited portion of the sample and a processor for processing spectral data about the optical signal from the spectrometer. The exciter may include a spark generator and a counter electrode, a laser or other device for generating the optical signal from the sample portion. The spectrometer has a wavelength range broad enough to enable the test instrument to detect and determine relative quantities of carbon, phosphorous, sulfur, manganese, silicon, iron and other elements necessary to identify common alloys. The spectrometer includes a structural member made of a light-weight material having a small coefficient of thermal expansion (CTE). The spectrometer is dimensionally stable over a range of expected ambient temperatures, without controlling the temperature of the spectrometer.

Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.

A method is disclosed for monitoring and controlling a process of plasma-assisted surface modification of a layer formed on a substrate. The method includes flowing a surface modification gas into a plasma processing chamber of a plasma processing system, igniting a plasma in the plasma processing chamber to initiate a surface modification process for a layer formed on a substrate, and acquiring optical emission spectra from an optical emission spectroscopy system attached to the plasma processing chamber, during the surface modification process for the layer. For one embodiment, the method includes altering at least one parameter of the surface modification process based on the acquired optical emission spectra. For one embodiment, the acquired optical emission spectra can include an intensity of a spectral line, a slope of a spectral line, or both to enable endpoint control of the surface modification process. Additional methods and related systems are also disclosed.

Methods and systems for control and monitoring processing of semiconductor materials with a focused laser beam. Laser light may be focused on a sample to excite optical emission at the sample surface during processing, which may include laser processing. Optical emission spectra produced may be analyzed for various properties effectively during the process. For example, process effects such as chemical composition analysis, species concentration, depth profiling, homogeneity characterization and mapping, purity, and reactivity may be monitored by optical spectral analysis. The wavelength may be selected to be appropriate for the process effect chosen.

Disclosed is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.

The present invention generally provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe.