24 results about "Optical emission spectroscopy" patented technology

The invention discloses a plasma etching process detection method and device, a storage medium and equipment. The method comprises the steps that in the plasma etching process of a first semiconductor structure, the light intensity of gas phase particles in an excited state in a plasma etching cavity is collected, and corresponding optical emission spectrum (OES) data are obtained; and based on the OES data, utilizing a preset machine learning model to obtain a prediction result of the current plasma etching process. By adopting the scheme, the detection efficiency of the plasma etching process can be improved.

A carbon dioxide (CO2) hydrogenation catalyst and a method of its preparation. The CO2 hydrogenation catalyst includes an alkali-metal enriched bauxite residue including calcium carbonate (CaCO3), iron(III) oxide (Fe2O3), iron(III) oxyhydroxide (FeO(OH)), aluminum hydroxide (Al(OH)3), sodalite, muscovite, and Na5Al2CSi3O15. The CO2 hydrogenation catalyst further includes 1 weight percent (wt. %) to 10 wt. % potassium based on a total weight of the CO2 hydrogenation catalyst by inductively coupled plasma optical emission spectroscopy (ICP-OES). The CO2 hydrogenation catalyst is used in a method of hydrogenating carbon dioxide to produce olefins.

A method for predicting quality of a workpiece includes: obtaining optical emission spectroscopy (OES) raw data of the workpiece, the OES raw data having a time dimension and a wavelength dimension; selecting, in the wavelength dimension, a first portion of the OES raw data that falls within wavelength ranges selected based on a material used in a process of producing the workpiece; selecting, in the time dimension, a second port of the OES raw data that falls within a time range corresponding to a specific step of the process, where the specific step is to be analyzed; generating tokens by grouping the selected portions of the OES raw data; and training a model with the tokens.

Analysis of samples injected into an inductively coupled plasma source can be improved by one or more of a stabilizing solution that is mixable with the sample prior to injection and a heated injector. With relatively low amounts of dissolved solids (e.g., at or below about 0.2%), the stabilizing solution can minimize differences in osmotic pressure between the solution and the cells. The stabilizing solution can contain a salt (e.g., ammonium nitrate) present at a concentration of at least 5 mM. The injector can be heated before and / or during injection. In some cases, heat from adjacent portions can be directed into the injector to improve heating of the injector. An injector heated to a sufficient temperature can minimize solute accumulation and can extend the available time between cleanings. These improvements may be particularly useful in elemental analysis such as inductively coupled plasma mass spectrometry or inductively coupled plasma optical emission spectroscopy.

The present invention relates to a technology for efficiently removing by-products generated in a semiconductor process, and in particular, to a cleaning device for a plasma chamber that can shorten the decomposition time and improve the decomposition rate of by-products by estimating the amount of by-products through spectrum analysis technology and variably controlling the RF power accordingly. To this end, the cleaning device for a plasma chamber according to the present invention includes an OES (Optical Emission Spectroscopy) sensor that measures the optical spectrum emitted from the plasma inside the plasma chamber in real time; and a control unit that analyzes the optical spectrum data received from the OES sensor to calculate the concentration of by-products accumulated inside the plasma chamber, and calculates the RF power applied to the plasma chamber based on the concentration of by-products to control the operation of an RF generator.

The present invention relates to a computer-implemented method for automatically identifying the presence of one or more elements in a sample via optical emission spectroscopy. The method comprises the following steps: obtaining sample spectral data from the sample; obtaining a list of one or more predetermined emission wavelengths for each element in the periodic table quantifiable by optical emission spectroscopy, each predetermined emission wavelength being associated with a list of one or more potentially interfering emission wavelengths; determining a list of one or more analyte wavelengths corresponding to spectral peaks in the sample spectral data based on the list of emission wavelengths; determining, for each analyte wavelength, whether the corresponding spectral peak has a probability of being affected by an interfering emission wavelength that causes spectral interference based on the list of one or more potentially interfering emission wavelengths corresponding to the analyte wavelengths; determining a revised list of one or more analyte wavelengths by removing analyte wavelengths corresponding to spectral peaks having a probability of being affected by an interfering emission wavelength from the list of analyte wavelengths; and determining a confidence level that one or more elements are present in the sample based on a set of criteria applied to the revised list of analyte wavelengths.

The present disclosure provides a positive electrode active material blend comprising a first positive electrode active material powder having a particle size distribution value D501 lower than or equal to 2 μm, in particular measured by PSD, wherein the first positive electrode active material powder comprises Li, M', and 0, wherein M' comprises: Ni in a content x, wherein 45 at% ≤ x ≤ 98 at%, relative to M', Mn in a content y, wherein 0 at% < y ≤ 25 at%, relative to M', Co in a content z, wherein 0 at% < z ≤ 25 at%, relative to M', and D in a content a, wherein 0 at% ≤ a ≤ 5 at%, relative to M', wherein D comprises at least one element selected from Al, B, Ba, Ca, Cr, Fe, Mg, Mo, Nb, S, Si, Sr, Ti, Y, V, W, Zn, and Zr, wherein x, y, z, and a are measured by inductively coupled plasma - optical emission spectroscopy (ICP-OES), wherein x+y+z+a is 100 at%; further comprising a second positive electrode active material powder having a particle size distribution value D502 higher than 2 pm and lower than or equal to 15 μm.

An apparatus for plasma control is disclosed. The apparatus comprises: a plasma generator comprising two electrodes, an anode and a cathode, configured to produce a plasma between the two electrodes; a solenoid coil disposed to surround the plasma and configured to produce a magnetic field parallel to a longitudinal axis between the two electrodes; and circuitry configured for allowing independent timing of the magnetic field with respect to the production of the plasma. A method for plasma control in a spectroscopy system and an optical emission spectrometer using said method are also disclosed.

A spark stand assembly for an optical emission spectroscopy includes: a spark stand body on a mounting flange enabling attaching the assembly to a main housing; an exciter in a recess on the body; an elevated portion on the body adjacent the mounting flange; an elongated notch on the body connecting the recess to a passageway through the elevated portion; a spark stand plate on the body to cover the recess, the notch and part of the elevated portion so the recess forms a plasma chamber and the notch forms a path to the passageway. The plate includes an opening exposing part of a sample on the opening for excitation, the opening being spatially aligned with the exciter when the plate is on the body; and a sealing member between the top of the body and the plate enclosing the recess and notch and routed over the elevated portion.

A system for determining the concentration of radicals in a particle stream delivered into a semiconductor processing chamber comprises a plasma generator, a spectrometer optically coupled to the glow discharge region of the plasma generator, and a controller communicatively coupled to the spectrometer. The plasma source is operable to generate a glow discharge to excite radicals and diluent gases in the accepted effluent stream. The spectrometer is operable to output measurement data representing the intensity of light emitted by the excited radicals and diluent gases. The controller is operable to calculate the concentration of radicals in the effluent stream based on the measurement data.

Methods for detection using optical emission spectroscopy in which an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

The invention provides a gradient compact lithium-magnesium-based fluorinated covalent organic framework composite material as well as a preparation method and application thereof, and belongs to the technical field of electrochemistry. The preparation method comprises the following steps: mixing metal lithium and metal magnesium, and alloying to obtain a Li-Mg alloy; a fluorine-containing compound is used as a deposition raw material, the Li-Mg alloy is placed in a plasma reaction cavity for plasma treatment, a gradient compact transition layer is formed on the surface of the Li-Mg alloy, and the gradient compact lithium-magnesium-based fluorinated covalent organic framework composite material is obtained; in the plasma treatment process, the intensity of a 750.4 nm characteristic spectral line of argon is monitored in real time through an optical emission spectrum. Through innovation of the material and the process, the critical current density of the material is improved, the interface impedance is reduced, and the cycle life of the battery is prolonged.

A method of characterizing a plasma in a plasma processing system that includes: generating a pulsed plasma in a plasma processing chamber of the plasma processing system, the pulsed plasma being powered with a pulsed power signal, each pulse of the pulsed plasma including three periods: a overshoot period, a stable-ON period, and a decay period; performing cyclic optical emission spectroscopy (OES) measurements for the pulsed plasma, the cyclic OES measurements including: obtaining first OES data during one of the three periods from more than one pulses of the pulsed plasma; and obtaining a characteristic of the pulsed plasma for the one of the three periods based only on the first OES data.

To provide a dry etching method for a carbon atom-containing film, with which a carbon atom-containing film can be etched easily at a high etching rate.SOLUTION: A dry etching method for a carbon atom-containing film includes: a mixed gas introduction step of introducing a mixed gas containing oxygen and a sulfur compound into an etching chamber in which a structure provided with a carbon atom-containing film is disposed; and an etching step of turning the mixed gas into plasma within the etching chamber and using the plasma gas as an etching gas to etch the carbon atom-containing film of the structure. In the etching step, the plasma gas is generated such that the analysis result from emission spectral analysis of the plasma gas satisfies at least one of the following requirements (A), (B) and (C). (A) A maximum intensity ratio R1 is 0.52 or higher. (B) A maximum intensity ratio R2 is 0.12 or higher. (C) A maximum intensity ratio R3 is 0.48 or higher.SELECTED DRAWING: Figure 2

An apparatus includes a base component and a plurality of collimators housed within the base component. Each collimator of the plurality of collimators corresponds to a respective location of a plurality of locations of a wafer in an etch chamber. The plurality of locations includes a center location of the wafer, a plurality of inner ring locations along an inner ring of the wafer associated with a first set of radially symmetric optical emission spectroscopy (OES) signal sampling paths, and a plurality of outer ring locations along an outer ring of the wafer associated with a second set of radially symmetric OES signal sampling paths.

Aspects of the present disclosure provide a method for optical emission spectroscopy (OES) detector signal sensitivity improvement. For example, the method can include scanning OES spectra of an optical emission, and defining all wavelengths of the optical emission whose intensities do not satisfy a predetermined requirement. The method can further include adjusting the intensity of each of the defined wavelengths by a first predetermined factor, and calculating an amplification / attenuation coefficient corresponding to the intensity of the defined wavelength based on the first predetermined factor. The method can further include conducting data analysis on the optical emission by taking into account all the amplification / attenuation coefficients.

A method for analyzing the content of boron in a cathode active material is disclosed herein. In some embodiments, a method comprises (S1) introducing boron into a cathode active material to prepare a cathode active material sample, (S2) separating a first liquid layer and a first precipitate by dissolving the sample in water, treating the first liquid layer with acid to form a first resulting solution, and measuring the boron concentration in the first resulting solution by inductively coupled plasma optical emission spectroscopy (ICP-OES), (S3) separating a second liquid layer and a second precipitate by dissolving the first precipitate in water, treating the second liquid layer with acid to form a second resulting solution, and measuring the boron concentration of the second resulting solution by ICP-OES, and (S4) measuring the boron concentration of a third resulting solution, obtained by adding acid and hydrogen peroxide to the second precipitate, by ICP-OES.

The invention discloses a single crystal diamond deposition quality intelligent detection method based on OES spectrum, and the method comprises the steps: extracting OES spectrum data in a deposition area, carrying out the preprocessing, extracting spectral features from the preprocessed OES spectrum data through a convolutional neural network, and calculating plasma feature parameters; the plasma characteristic parameters comprise electron density and electron temperature, constructing a time sequence prediction model, obtaining a correlation model of the plasma characteristic parameters and deposition indexes, detecting the deposition quality according to the correlation model, and performing feedback control on the process parameters according to the detection result. According to the method, by integrating an optical emission spectrum technology and an intelligent algorithm, the limitation of a traditional detection method is overcome, dynamic analysis of plasma parameters and high-precision prediction of deposition quality are achieved, and meanwhile good interpretability is achieved.

The invention discloses a manufacturing method of a semiconductor chip, which relates to the field of chip manufacturing, and comprises the following steps: selecting a wafer for deposition, collecting deposition data in the wafer deposition process, inputting a pre-constructed thin film deposition optimization model to obtain a wafer with a double-layer structure, coating the wafer with the double-layer structure, then defining a guide template, and carrying out film deposition on the wafer with the double-layer structure. Then surface chemical modification is carried out, the PS cylinder is embedded into the wafer with the double-layer structure, a wafer with a PS cylinder pattern is obtained, a hard mask is formed on the wafer with the PS cylinder pattern through reactive ion etching, atomic-scale precision etching is carried out on the basis of the hard mask, and the wafer with the PS cylinder pattern is obtained. And monitoring and dynamically adjusting by using an optical emission spectrum and an LSTM (Long Short Term Memory) in the atomic-scale precision etching process to form a wafer with FinFET fins. The deposition data is analyzed in real time through the thin film deposition optimization model, the adjustment instruction is output, and a uniform hard mask and an etching stop layer are provided for the subsequent process.

A system for gas measurement includes an exhaust line coupled with a semiconductor processing chamber, an exhaust plasma chamber coupled with the exhaust line, an optical emission spectroscopy (OES) detector coupled to the exhaust plasma chamber, and a flow controller device coupled to the exhaust plasma chamber and the exhaust line by a gas injection line. The exhaust plasma chamber is configured to generate a plasma from gas received through the exhaust line. The flow controller device is configured to inject gas into the exhaust plasma chamber.

A method for determining an endpoint of an etching process using optical emission spectroscopy (OES) data as input is described. The OES data is acquired by a spectrometer in a plasma etching process chamber. First, the acquired spectral data evolving over time is filtered and detrended, and subsequently the data is transformed into transformed spectral data or trends using multivariate analysis such as principal component analysis, in which the transformation is accomplished using previously calculated principal component weights. Separate signed trends (synthetic wavelengths) are created by grouping the principal component weights into two separate groups corresponding to positive and negative natural wavelengths.

The disclosure relates to an apparatus for fabricating a display panel. According to an embodiment of the disclosure, an apparatus for fabricating a display panel, comprising a thin film deposition device forming a thin film on a fabricating substrate, and a thin film characteristic detection device generating optical emission spectroscopy data by analyzing a spectrum of light emitted during a thin film deposition process of the thin film deposition device and detecting thin film characteristic information of the thin film formed on the fabricating substrate by analyzing the optical emission spectroscopy data in real time, wherein the thin film characteristic detection device detects the thin film characteristic information including a hydrogen concentration of the thin film formed on the fabricating substrate by analyzing a wavelength distribution of the light, an intensity distribution of the light, and a plurality of plasma characteristic information from the optical emission spectroscopy data.

An etching method includes etching a material in an etch chamber by alternating normal-flow etch steps and reduced-flow etch steps, where an etchant gas is provided at a normal flow rate into the etch chamber during the normal-flow etch steps, and the etchant gas is provided at a reduced flow rate lower than the normal flow rate into the etch chamber during the reduced-flow etch steps, obtaining optical emission spectroscopy (OES) data during the reduced-flow etch steps, determining an end point for the etching based on the obtained OES data, and ending the etching at the determined end point.

A secondary battery includes a positive electrode, a negative electrode, and an electrolytic solution. The negative electrode includes a film covering a negative electrode active material layer. The electrolytic solution includes a chain carboxylic acid ester. According to an analysis of the film by inductively coupled plasma optical emission spectroscopy, a content of boron in the film is greater than or equal to 10 μmol / m2 and less than or equal to 30 μmol / m2, a content of sulfur in the film is greater than or equal to 20 μmol / m2 and less than or equal to 70 μmol / m2, and a ratio of the content of sulfur to the content of boron is greater than or equal to 1.0 and less than or equal to 3.0.