System and method for plasma assisted film deposition

Abstract

The invention relates to a film deposition system through the assistance of plasma and a method thereof. The system mainly consists of a plasma film deposition device and a plasma process monitoring device; the plasma film deposition device can be used for inputting pulse power and process reaction gas; the pulse power and process reaction gas act to produce an active species in reaction gas for a plasma discharge and dissociation process so as to carry out a film deposition process; the plasma process monitoring device comprises a plasma composition optical emission spectroscopy and a pulse plasma modulation program device; the value of spectral intensity of the active species in a plasma composition is measured through the plasma composition optical emission spectroscopy; and the spectral intensity ratio between the active species is calculated through pulse plasma modulation program device, so as to modulate the proper action time and power of the pulse power plasma, obtain high sedimentation rate within the sedimentation range of microcrystal silicon and master the optimal sedimentation quality of the film in real time.

Description

technical field [0001] The present invention relates to a plasma-assisted thin film deposition system and method, in particular to a plasma composition optical emission spectrometer to monitor the spectral intensity between active species dissociated by pulsed plasma, and to adjust the program device through the plasma A plasma-assisted thin film deposition system and method that calculates the spectral intensity ratio between active species, actively modulates pulse power supply parameters, obtains a high deposition rate within the range of microcrystalline silicon deposition, and controls the best film deposition quality in real time. Background technique [0002] Press, microcrystalline silicon (μc-Si) thin films can be applied to tandem silicon thin film solar cell structure, which has the advantage of improving the photoelectric conversion efficiency of thin film solar cells; usually by plasma-assisted vapor deposition (PECVD) ) technology can obtain microcrystalline si...

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Problems solved by technology

[0005] However, in the microcrystalline silicon deposition process, such as silane gas (SiH4) and hydrogen gas (H 2 ) etc. are dissociated by the plasma, which will dynamically affect the deposition rate and crystallization rate of the microcrystalline silicon film. Although the ratio of dissociated gas can achieve the purpose of improving the deposition rate and uniformity of microcrystalline silicon film, it cannot monitor and quantitatively analyze the change of dissociated gas composition in the film deposition process; figure 1 Only the preset two-stage process time T and the plasma action time ratio Pr are displayed. However, in practical applications, to obtain the best deposition rate, it is necessary to accurately subdivide more pulsed plasma action time ratios, and only preset The multi-stage process conditions complicate the actual application and operation; in addition, the known patent belongs to an open-loop system, and the dissociation rate of the process gas in the plasma is in the long-term thin film deposition process and mass production, which is easily caused by the disturbance of the gas flow field, Differences caused by factors such as electrode surface deposition will also affect the accuracy of the original preset process conditions, resulting in the inability to obtain the expected film deposition quality

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