Resonant tunneling diode based on InGaAs/AlAs material

A resonant tunneling and diode technology, applied in the fields of diodes, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of small electron mobility and saturation speed, reduce the transit time, increase the peak-to-valley current ratio, improve the The effect of operating frequency

Inactive Publication Date: 2016-08-10
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

However, compared with InGaAs/AlAs materials, the electron mobility and saturation velocity of Ge/Si and InAlN/GaN mate

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  • Resonant tunneling diode based on InGaAs/AlAs material
  • Resonant tunneling diode based on InGaAs/AlAs material
  • Resonant tunneling diode based on InGaAs/AlAs material

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[0019] In order to realize a nano electronic device with extremely high frequency and working speed, the present invention proposes a resonant tunneling diode based on InGaAs / AlAs material, using n-type InP as the substrate; and heavily doped InGaAs to form the emission layer and the collection area; The strained InGaAs layer is used as the quantum well and AlAs is used as the barrier to form a double barrier single well structure (DBS); a mesa structure formed by n-type heavily doped high In composition InGaAs, and formed on the substrate and mesa respectively Au / Pi / Ti metal electrode.

[0020] The technical scheme of the present invention will be further explained below in conjunction with the drawings.

[0021] figure 1 Shown is a schematic diagram of the mesa structure of a resonant tunneling diode based on InGaAs / AlAs.

[0022] This InGaAs / AlAs-based resonant tunneling diode includes from bottom to top:

[0023] InP substrate layer 1;

[0024] An undoped InGaAs layer with a thick...

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Abstract

The invention relates to the technical field of diodes, especially a resonant tunneling diode based on an InGaAs/AlAs material. An In0.53AlxGa0.47-xAs/InP composite current collection structure is employed in a composite current collection region, thereby reducing the transit time of electrons in the diode, and improving the working speed. Strain InxGal-xAs is employed as a potential well material, and the In0.53AlyGa0.47-yAs serves as a transmission layer, thereby reducing the start voltage and the peak voltage. Non-doped InAlGaAs and InGaAs layers are respectively deposited between the transmission layer and a first barrier layer, and between the composite current collection region and a second barrier layer, and an isolation region is formed, thereby preventing foreign matters in a heavily-doped region from diffusing towards a DBS region. The diode can be applied to a high-speed digital circuit, a high-frequency oscillation device and the assembly of a high-quality display more effectively.

Description

Technical field [0001] The invention relates to the technical field of nano devices, in particular to a resonance tunneling diode. Background technique [0002] According to Moore's law, electronic technology represented by silicon-based technology continues to reduce the feature size of devices, and has faced the physical limits, technological limits and device structural limits of the devices. Under these extreme conditions, nanoelectronic devices based on the quantum tunneling effect have emerged. Among them, the resonant tunneling diode has a unique differential negative resistance phenomenon, so it has the remarkable characteristics of fast response, high operating frequency, low voltage, low power consumption, etc., especially when the same function is realized, the number of devices required is large The reduction in amplitude is conducive to reducing the chip area, making it have broad application prospects in high-frequency oscillators and high-speed digital circuits. ...

Claims

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Application Information

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IPC IPC(8): H01L29/87H01L29/06H01L29/205H01L21/329
Inventor 杨文献陆书龙吴渊渊谭明
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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