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NPN type transverse SOI AlGaN/Si HBT device structure and preparation method thereof

A device structure, lateral technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as insufficiency, and achieve the effect of increasing frequency, improving frequency characteristics, and small collector junction area

Pending Publication Date: 2020-05-05
中合博芯(重庆)半导体有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Traditional semiconductor materials represented by silicon (Si) and gallium arsenide (GaAs) have gradually failed to meet the development of modern electronic technology under the requirements of radiation resistance, high temperature, high voltage and high power.

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  • NPN type transverse SOI AlGaN/Si HBT device structure and preparation method thereof
  • NPN type transverse SOI AlGaN/Si HBT device structure and preparation method thereof
  • NPN type transverse SOI AlGaN/Si HBT device structure and preparation method thereof

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Embodiment Construction

[0034] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.

[0035] In describing the present invention, it is to be understood that the terms "longitudinal", "radial", "length", "width", "thickness", "upper", "lower", "front", "rear", The orientation or positional relationship indicated by "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings , is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. In the description of the present inventi...

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Abstract

The invention provides an NPN type transverse SOI AlGaN / Si HBT device structure. The device comprises an N-type lightly-doped semi-insulating monocrystalline silicon substrate. A buried oxide layeris formed on the surface of the N-type lightly doped semi-insulating monocrystalline silicon substrate. An emitter region, a base region and a collector region with the same thickness and different widths are formed on the surface of the buried oxide layer from left to right. A SiON oxide layer and an N-type doped AlGaN layer are deposited in the emitter region and the collector region from bottomto top. A P-type heavily doped Si layer with the doping concentration gradually changing from left to right grows in the base region. Electrode leading-out layers of an emitting electrode, a base electrode and a collecting electrode correspondingly grow on the surfaces of the emitting region, the base region and the collecting region through metal silicide, and the adjacent electrode regions areinsulated and isolated through isolation oxide layers. The invention further provides a preparation method of the device structure. According to the invention, the interface characteristic and the base region electron mobility of the AlGaN layer can be improved; the base region transit time is reduced; the device frequency is improved to enable the frequency characteristic to be more excellent; and meanwhile, the metal silicide layer can improve the switching speed and the cut-off frequency of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an NPN type lateral SOI AlGaN / Si HBT device structure and a preparation method thereof. Background technique [0002] The traditional semiconductor materials represented by silicon (Si) and gallium arsenide (GaAs) have gradually failed to meet the development of modern electronic technology under the requirements of radiation resistance, high temperature, high voltage and high power. Wide bandgap semiconductor GaN electronic devices can be used in high temperature, high voltage, high frequency and harsh environments, such as radar and wireless communication base stations and satellite communications. [0003] Due to its wide band gap, high breakdown voltage, high electron saturation drift velocity, excellent electrical and optical properties, and good chemical stability, GaN is favored in high-frequency, high-power, high-temperature electronic devices. At present, it is r...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/267H01L29/36H01L29/417H01L29/47H01L29/737H01L21/331
CPCH01L29/0607H01L29/0684H01L29/267H01L29/36H01L29/41708H01L29/47H01L29/475H01L29/66318H01L29/737
Inventor 李迈克
Owner 中合博芯(重庆)半导体有限公司
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