Voltage-sharing protection circuit for series connection of IGBT

A voltage protection and circuit technology, applied in the field of voltage equalization protection circuits, to avoid the risk of overvoltage damage, reduce the peak value, and save the space for device installation

Active Publication Date: 2017-05-31
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the defects of the prior art, the purpose of the present invention is to provide a voltage equalization protection circuit for series connection of IGBTs, aiming to solve the problem of voltage leveling and overvoltage protection of IGBTs in series operation in the prior art

Method used

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  • Voltage-sharing protection circuit for series connection of IGBT
  • Voltage-sharing protection circuit for series connection of IGBT
  • Voltage-sharing protection circuit for series connection of IGBT

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Embodiment 1

[0056] image 3 It is a schematic diagram of a voltage equalization protection circuit made by applying this principle. The circuit includes a static voltage equalization resistor, a drive circuit 1 and a control circuit 2; the drive circuit 1 includes a voltage acquisition module U1, a comparison module U2, a first optical fiber transceiver module, and a drive module U3 . A grid resistance control module; the control circuit 2 includes a second optical fiber transceiver module and a control module U6.

[0057] Figure 4 It is the circuit diagram of this embodiment, the series IGBT Q1 connected in the voltage equalization protection is FZ800R33KF2C; its rated voltage is 3300V, rated current is 800A, blocking resistance is 660KΩ, the actual working voltage is 1250V, and the set peak voltage is 1500V ;

[0058] The static voltage equalizing resistor is connected in parallel with the series IGBT Q1. The static voltage equalizing resistor includes a series voltage equalizing res...

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Abstract

The invention discloses a voltage-sharing protection circuit for the series connection of an IGBT, and the circuit comprises a voltage collection module, an i-th comparator, a control module and a grid electrode resistor module, wherein I is one integer from 1 to N, and N is a natural number. An i-th output end of the voltage collection module is connected with the i-th comparator, and the first output end of the i-th comparator is connected with an i-th input end of the grid electrode resistor module. The second output end of the first comparator is connected with the input end of the control module, and the output end of the control module is connected with the (N+1)-th input end of the grid electrode resistor module. The output end of the grid electrode resistor module serves as the output end of the voltage-sharing protection circuit. According to the invention, the circuit obtains a square wave signal through a set threshold value according to a voltage signal of a collector electrode, so as to change the size of the grid resistance. The circuit can adjust the rising speed of the voltage of the collector electrode, reduces the peak voltage, inhibits the overvoltage impact caused by the difference of stray parameters of a signal transmission line, and can avoid the overvoltage loss risks of the series connection of the IGBT at a current cut-off stage and in the whole working period.

Description

technical field [0001] The invention belongs to the field of power electronics, and more specifically relates to a voltage equalization protection circuit for series-connected IGBTs. Background technique [0002] A solid-state power electronic switch composed of an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) has the characteristics of fast switching speed, strong controllability, and long life. Used in series to achieve a higher voltage level, this solution has good effect and low cost, so it has been widely concerned and applied. [0003] When the IGBTs are used in series, due to the subtle differences between the various semiconductor devices and the influence of the parasitic inductance of the line, the pressure on each device will be unbalanced during the switching process, which will greatly affect the service life and working efficiency of the switch, and even Cause device breakdown damage. Ensuring the balanced voltage distribution of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567
Inventor 张明王栋煜
Owner HUAZHONG UNIV OF SCI & TECH
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