130results about How to "Reduce surge voltage" patented technology

A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

A switching power supply device includes a full-bridge circuit, a transformer, a rectifier circuit, a filter circuit, a first series connection of a snubber capacitor and a first diode, and a second diode. The full-bridge circuit includes switching elements which are controlled to be driven under phase-shift control. The first series connection is connected in parallel with the smoothing reactor, where one terminal is connected to a terminal on positive side of the rectifier circuit, and the other terminal is connected to an anode of the first diode. A cathode of the first diode is connected to one terminal of the smoothing capacitor which is applied with positive voltage. The second diode is provided between a terminal on negative side of the rectifier circuit and a connecting point of the snubber capacitor and the first diode. A cathode of the second diode is connected to the connecting point.

A power control unit which comprises a plurality of semiconductor elements including a plurality of high-potential side semiconductor elements and a plurality of low-potential side semiconductor elements, and each having a first face and a second face, a collector terminal or an emitter terminal provided on the first face, or an emitter terminal and a gate terminal provided on the first face; a plurality of bus bars electrically connected with at least one of the semiconductor elements, and forming a power module together with the semiconductor elements; a terminal block having signal lines and a resin mold which supports the signal lines; and an engaging portion provided on at least one of the bus bars, and engaging with a portion of the terminal block, and also supporting the terminal block, the signal lines directly connected with the gate electrodes through the engaging portion.

A vehicle drive device includes a motor generator (MG2), a power control unit controlling the motor generator (MG2), and a case housing the motor generator (MG2) and the power control unit. The power control unit includes a first inverter driving the motor generator (MG2) and a voltage converter boosting a power supply voltage to apply the voltage to the first inverter. A reactor L1 which is a component of the voltage converter is disposed such that at least a portion of a core comes into contact with the case for heat exchange. Consequently, the heat is dissipated to the case having a large heat capacity for integral housing, to thereby allow the heat dissipation performance of the reactor (L1) arranged in the limited space to be ensured.

A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

In a semiconductor device, a surge voltage is lowered on turning OFF of a switching element, and output current is reduced on turning ON of the switching element in a non-saturated condition to achieve a reduced amount of self-heating. The semiconductor device can comprise a semiconductor switching element, an overvoltage protection circuit, and a resistance circuit to transmit a control signal for turning the switching element ON and OFF to a control terminal of the switching element. The semiconductor device can further comprise a voltage detecting switch that receives a signal corresponding to a voltage appearing at the output terminal of the switching element on turning OFF of the switching element, and a gate resistor change-over switch that operates according to a voltage of a timing capacitor connected to the output side of the voltage detecting switch to increase a resistance value of the resistance circuit.

A semiconductor device includes first and second assembled bodies (12A, 12B). The first assembled body is provided with a first semiconductor chip, a high voltage bus bar (21) connected to one surface of the first semiconductor chip, a first metal wiring board (24-1) connected to the other surface of the first semiconductor chip with a bonding wire, and a third metal wiring board (24-3) connected to the first metal wiring board. The second assembled body is provided with a second semiconductor chip, a low voltage bus bar (23) connected to one surface of the second semiconductor chip with a bonding wire, a second metal wiring board (24-2) connected to the other surface of the second semiconductor chip, and a fourth metal wiring board (24-4) connected by being returned from an end portion of the second metal wiring board and arranged in parallel to the second metal wiring board. The first assembled body and the second assembled body are arranged in a stacked structure wherein the assembled bodies are being separated. Inductance of a main circuit is reduced by the semiconductor module structure.

The invention discloses an over-voltage over-current protector of electronic and electric equipment. The over-voltage over-current protector of the electronic and electric equipment comprises a power surge protective device SPD I, a surge voltage divider and a power frequency current protector, two ends of the power surge protective device SPDI are respectively connected with a live wire and a null line after a power supply distribution board access port and before a protected equipment port, the surge voltage divider is composed of an electric reactor A, a power surge protective device SPD II and an electric reactor B in a series mode, the electric reactor A at one end of the surge voltage divider is arranged on a live wire after the power surge protective device SPD I, the electric reactor B at the other end is arranged on a null line after the power surge protective device SPD I, and the power frequency current protector is composed of a PTC positive temperature coefficient thermistor, an NTC negative temperature coefficient thermistor and a TVS tube. The over-voltage over-current protector of the electronic and electric equipment has surge over-voltage limit and surge residual voltage division protection functions and power frequency over-voltage and over-current protection functions, enables the equipment fault rate to be reduced and enables the equipment aging speed to be lowered.

A switching power supply unit providing a DC output comprises a DC power supply; a transformer having a primary winding; a main switching element for connecting in series to the primary winding; and an auxiliary switching element for performing ON/OFF operations in synchronism with or opposite to ON/OFF operations performed by the main switching element; wherein an auxiliary switching element drive winding for generating a voltage turning on/off the auxiliary switching element is disposed in the transformer; and a first impedance circuit including a first resistor, a first capacitor being connected in series with the first impedance circuit, and a differentiating circuit for determining the timing for turning on the auxiliary switching element and the ON time thereof is connected to the auxiliary switching element drive winding.

A semiconductor device (11) having a switching function of being turned on or off according to a voltage (Vge) of a driving signal supplied to a gate thereof is driven by generating a feedback voltage (V_FE) based on a time change (dI/dt) of a collector current (Ic) of the semiconductor device (11) and applying the feedback voltage (V_FE) as part of the voltage (Vge) of the driving signal when the semiconductor device (11) is switched from on to off.

A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.

In a DC power supply including a transformer, for making a semiconductor switch operate with a high frequency, an auxiliary circuit that reduces switching loss and a countermeasure circuit for a surge voltage generated in a rectifier diode are provided. In a DC power supply in which a DC power source 101 and a transformer T are connected via a power conversion circuit and a secondary winding of the transformer T is connected to a load RL via a rectifier diode bridge and a filter circuit to supply power to the load RL, a resonance reactor Lz is provided on an output side of the transformer T, a resonant switch circuit 103 including a parallel circuit of a diode Dz and a semiconductor switch Qz and a resonant capacitor Cz is connected in parallel to the rectifier diode bridge and a snubber circuit including a snubber capacitor Cs, a snubber diode Ds1 and a diode Ds2 for discharge is connected to a serial resonant circuit including the resonance reactor Lz and the resonant capacitor Cz in the resonant switch circuit 103 to absorb a surge voltage.

A serially connected surge suppression optimization device has an input terminal, an output terminal, a plurality of surge suppression units. The surge suppression units are serially mounted between the input terminal and the output terminal. Each surge suppression unit has at least one pair of parallel inductors and a plurality of surge absorption units respectively connected with one end of each of the pair of inductors. The pair of parallel inductors mounted in the surge suppression unit in a pre-stage and the surge suppression unit in a post-stage have different conductance values. Accordingly, the surge suppression optimization device connected in a path from which surges pass can significantly reduce energy of a surge flowing in and a residual surge voltage. The different conductance values of the surge suppression units in a pre-stage and a post-stage smoothen an intruding surge to secure better safety protection without abruptly generating a peak rise.

A power semiconductor module including a positive-side switching device and a positive-side diode device which are mounted on a positive-side conductive pattern, and a negative-side switching device and a negative-side diode device which are mounted on an output-side conductive pattern. When an insulating substrate is viewed in plan view, the positive-side diode device and the negative-side diode device are disposed between the positive-side switching device and the negative-side switching device, and the negative-side diode device is disposed closer to the positive-side switching device than the positive-side diode device is.

A power semiconductor element and a capacitor have their electrodes joined to each other in a module. The power semiconductor element is formed on a semiconductor substrate having first and second main surfaces. A power semiconductor module includes an electrode through which a main current flows, joined to the first main surface, an electrode through which the main current flows, joined to the second main surface, and a resin portion sealing the semiconductor substrate, the capacitor and the electrodes. The capacitor includes electrodes. The electrode of the capacitor and the electrode of the semiconductor element are joined to each other by solder such that surfaces exposed through the resin portion are arranged on one continuous surface on which a cooler can be attached. Therefore, a power semiconductor module can be provided in which the capacitor and the power semiconductor element can effectively be cooled and the surge voltage can be reduced.