RCD buffering circuit of Z-source inverter and Z-source inverter topology circuit comprising buffering circuit
A source inverter and snubber circuit technology, applied in the field of snubber circuits, can solve the problems of DC link voltage slopes, large losses, and high DC link voltage values, and achieve the goals of avoiding voltage distortion, reducing surge voltage, and low loss Effect
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specific Embodiment approach 1
[0023] Specific implementation mode one: refer to figure 1 Specifically illustrate this embodiment, the Z source inverter RCD snubber circuit described in this embodiment, it comprises: Diode D S , resistance R S and capacitance C S ;
[0024] The diode D S The positive connection resistor R S One end of the diode D S The negative terminal of the connected capacitor C S one end of
[0025] It also includes: Switch S S ;
[0026] Resistance R S The other end of the switch S is connected S One end of the switch S S The other end of the diode D is connected simultaneously S The negative pole and the capacitor C S one end of
[0027] Diode D S The positive terminal and the resistor R S One end of the Z source inverter RCD snubber circuit at the same time as the positive;
[0028] Capacitance C S The other end of the Z source inverter is used as the negative electrode of the RCD snubber circuit.
specific Embodiment approach 2
[0029] Specific embodiment two: this embodiment is to further explain the Z source inverter RCD snubber circuit described in specific embodiment one, in this embodiment, the switch S S for IGBTs.
[0030] IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, has the advantages of high input impedance of MOSFET and low conduction voltage drop of GTR, with low driving power and low saturation voltage.
specific Embodiment approach 3
[0031] Specific embodiment three: this embodiment is to further explain the Z source inverter RCD snubber circuit described in specific embodiment one, in this embodiment, the switch S S for MOSFETs.
[0032] MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET), Metal-Oxide-Semiconductor Field-Effect Transistor, the driving power is small, and the switching speed is fast.
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