GaN/beta Ga2O3 composite substrate material and preparation method thereof

A composite substrate, -ga2o3 technology, used in semiconductor/solid-state device manufacturing, semiconductor lasers, lasers, etc., can solve the problems of less use, increased device volume, lattice mismatch, etc., and achieves easy operation and simple preparation process. , the effect of small lattice mismatch

Inactive Publication Date: 2005-11-09
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] (2) Due to MgAl 2 o 4 The lattice mismatch between crystal and GaN is up to 9%, and the overall performance is not as good as that of α-Al 2 o 3 , and thus less used;
[0010] (3) Th

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] in β-Ga 2 o 3 Preparation of GaN thin films on single crystal substrates: the polished and cleaned β-Ga 2 o 3 The single crystal substrate is sent to the nitriding treatment furnace, and under the condition of high vacuum (>10-5Torr), the NH is continuously injected at a high temperature of 700°C 3 , (NH 3 The partial pressure should be greater than 1atm) A chemical reaction occurs at high temperature: , in the heated β-Ga 2 o 3 A GaN thin film is formed on the single crystal substrate, and the thickness of the GaN film is controlled to be 300nm. Then the obtained GaN / β-Ga obtained in the previous step 2 o 3 The sample is placed in an annealing furnace, and the temperature is raised to 700°C for annealing treatment, so as to obtain a GaN crystallized layer and form GaN / β-Ga 2 o 3 Composite substrate material. The composite substrate with this structure is suitable for the epitaxial growth of high-quality GaN.

Embodiment 2

[0032] in β-Ga 2 o 3 Preparation of GaN thin films on single crystal substrates: the polished and cleaned β-Ga 2 o 3The single crystal substrate is sent into the nitriding treatment furnace, and under the condition of high vacuum (>10-5Torr), the NH is continuously fed at a high temperature of 900°C 3 , (NH 3 The partial pressure should be greater than 1atm) A chemical reaction occurs at high temperature: , in the heated β-Ga 2 o 3 A GaN thin film is formed on a single crystal substrate, and the thickness of the GaN film is controlled to be 100nm. Then the obtained GaN / β-Ga obtained in the previous step 2 o 3 The sample is placed in an annealing furnace, and the temperature is raised to 1000°C for annealing treatment, so as to obtain a GaN crystallized layer and form a GaN / β-Ga 2 o 3 Composite substrate material. The composite substrate with this structure is suitable for the epitaxial growth of high-quality GaN.

Embodiment 3

[0034] in β-Ga 2 o 3 Preparation of GaN thin films on single crystal substrates: the polished and cleaned β-Ga 2 o 3 The single crystal substrate is sent into the nitriding treatment furnace, and under the condition of high vacuum (>10-5Torr), the NH is continuously fed at a high temperature of 900°C 3 , (NH 3 The partial pressure should be greater than 1atm) A chemical reaction occurs at high temperature: , in the heated β-Ga 2 o 3 A GaN thin film is formed on a single crystal substrate; the thickness of the GaN film is controlled to be 300nm. Then the obtained GaN / β-Ga obtained in the previous step 2 o 3 The sample is placed in an annealing furnace, and the temperature is raised to 1500°C for annealing treatment, so as to obtain a GaN crystallized layer and form GaN / β-Ga 2 o 3 Composite substrate material. The composite substrate with this structure is suitable for the epitaxial growth of high-quality GaN.

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Abstract

A GaN/beta-Ga2O3 compound substrate material and its preparation method, it is equipped with one GaN overburden layer constituted on beta-Ga2O3 single crystal. This compound substrate material preparation method is: Forming the GaN overburden layer with the use of perfect vacuum nitrogen treatment stove on beta-Ga2O3 single crystal substrate, then through anneal processing, obtaining the crystallized GaN thin film on beta-Ga2O3 single crystal substrate. The advantages are simple technology easy operation, suitable for the extension growth of high grade GaN.

Description

technical field [0001] The invention relates to the epitaxial growth of InN-GaN-based blue light semiconductors, especially a GaN / β-Ga 2 o 3 Composite substrate materials and their preparation methods. Background technique [0002] Wide bandgap III-V compound semiconductor materials represented by GaN are receiving more and more attention, and they will be used in blue and green light-emitting diodes (LEDs) and laser diodes (LDs), high-density information reading and writing, underwater It has broad application prospects in communication, deep water exploration, laser printing, biological and medical engineering, as well as ultra-high-speed microelectronic devices and ultra-high-frequency microwave devices. [0003] Due to GaN's high melting point, high hardness, and high saturated vapor pressure, high temperature and high pressure are required to grow large-sized GaN bulk single crystals. The Polish High Pressure Research Center only produced strips with a width of 5 mm a...

Claims

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Application Information

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IPC IPC(8): H01L21/02
Inventor 吴锋夏长泰张俊刚徐军
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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