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Material with composite substrate of (Mg, Cd) In2O4/MgAl/204 and its prepn method

A composite substrate, mgal2o4 technology, applied in semiconductor/solid-state device manufacturing, semiconductor lasers, lasers, etc., can solve the problems of increasing device volume, less use, lattice mismatch, etc., and achieve simple preparation process, easy operation, Effect of small lattice mismatch

Inactive Publication Date: 2007-01-17
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] (2) Due to MgAl 2 o 4 The lattice mismatch between crystal and GaN is up to 9%, and the overall performance is not as good as that of α-Al 2 o 3 , and thus less used;
[0010] (3) The above transparent oxide substrates are not conductive, making the device difficult to manufacture, and also increases the volume of the device, resulting in a lot of waste of raw materials

Method used

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  • Material with composite substrate of (Mg, Cd) In2O4/MgAl/204 and its prepn method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The polished and cleaned MgAlO 4 The single crystal substrate is sent to the pulsed laser deposition PLD system to prepare (Mg, Cd) In 2 o 4 thin film, (Mg,Cd)In 2 o 4 The source uses more than 99.999% (Mg, Cd) In 2 o 4 Polycrystalline target. The system uses a KrF excimer laser with a pulse width of 25-30ns, and the lasing wavelength is 248nm. 2 The energy density of the concentrated light is irradiated to the (Mg, Cd)In in the vacuum device through the optical window 2 o 4 target, depositing (Mg, Cd)In in an oxygen-rich atmosphere 2 o 4 thin film, MgAl 2 o 4 The single crystal substrate temperature is 200°C, and the (Mg, Cd)In 2 o 4 The thickness of the film was 300 nm. Then the (Mg, Cd)In obtained in the previous step 2 o 4 / MgAl 2 o 4 The sample is placed in an annealing furnace, and the temperature is raised to 10,000°C for annealing treatment to obtain (Mg, Cd)In 2 o 4 single crystal capping layer, resulting in (Mg, Cd)In 2 o 4 / MgAl 2 o 4 ...

Embodiment 2

[0032] The polished and cleaned MgAl 2 o 4 The single crystal substrate is sent to the pulsed laser deposition PLD system to prepare (Mg, Cd) In 2 o 4 thin film, (Mg,Cd)In 2 o 4 The source uses more than 99.999% (Mg, Cd) In 2 o 4 Polycrystalline target. The system uses a KrF excimer laser with a pulse width of 25-30ns (nanoseconds), and the lasing wavelength is 248nm. 2 The energy density of the concentrated light is irradiated to the (Mg, Cd)In in the vacuum device through the optical window 2 o 4 target, depositing (Mg, Cd)In in an oxygen-rich atmosphere 2 o 4 thin film, MgAl 2 o 4 The single crystal substrate temperature is 100°C, and the (Mg, Cd)In 2 o 4 The thickness of the film was 100 nm. Then the (Mg, Cd)In obtained in the previous step 2 o 4 / MgAl 2 o 4 The sample is placed in an annealing furnace, and the temperature is raised to 700°C for annealing treatment to obtain (Mg, Cd)In 2 o 4 single crystal capping layer, resulting in (Mg, Cd)In 2 o 4...

Embodiment 3

[0034] The polished and cleaned MgAl 2 o 4 The single crystal substrate is sent to the pulsed laser deposition PLD system to prepare (Mg, Cd) In 2 o 4 thin film, (Mg,Cd)In 2 o 4 The source uses more than 99.999% (Mg, Cd) In 2 o 4 Polycrystalline target. The system uses a KrF excimer laser with a pulse width of 25-30ns, and the lasing wavelength is 248nm. 2 The energy density of the concentrated light is irradiated to the (Mg, Cd)In in the vacuum device through the optical window 2 o 4 target, depositing (Mg, Cd)In in an oxygen-rich atmosphere 2 o 4 thin film, MgAl 2 o 4 The single crystal substrate temperature is 300°C, and the (Mg, Cd)In 2 o 4 The thickness of the film was 500 nm. Then the (Mg, Cd)In obtained in the previous step 2 o 4 / MgAl 2 o 4 The sample is placed in an annealing furnace, and the temperature is raised to 1500°C for annealing treatment to obtain (Mg, Cd)In 2 o 4 single crystal capping layer, resulting in (Mg, Cd)In 2 o 4 / MgAl 2 o ...

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Abstract

The composite substrate material is prepared by covering a layer of (Mg, Cd)In2O4 on MgAl2O4 single crystal. The method for preparing the material includes steps: forming (Mg, Cd)In2O4 covering layer on substrate of MgAl2O4 (111) single crystal; through treatment of annealing technique, crystallized thin film of (Mg, Cd)In2O4 (111) is obtained on substrate of MgAl2O4 (111) single crystal. Features are: simple preparation technique and easy of operation. Structure of composite substrate (Mg, Cd)In2O4 / MgAl2O4 is suitable for epitaxial growth of GaN in high quality.

Description

technical field [0001] The invention relates to the epitaxial growth of InN-GaN-based blue light semiconductors, in particular to (Mg, Cd)In for the epitaxial growth of InN-GaN-based blue light semiconductors 2 o 4 / MgAl 2 o 4 Composite substrate material and its preparation method. Background technique [0002] Wide bandgap III-V compound semiconductor materials represented by GaN are receiving more and more attention, and they will be used in blue and green light-emitting diodes (LEDs) and laser diodes (LDs), high-density information reading and writing, underwater It has broad application prospects in communication, deep water exploration, laser printing, biological and medical engineering, as well as ultra-high-speed microelectronic devices and ultra-high-frequency microwave devices. [0003] Due to GaN's high melting point, high hardness, and high saturated vapor pressure, high temperature and high pressure are required to grow large-sized GaN bulk single crystals. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L33/00H01S5/00
Inventor 夏长泰张俊刚徐军周国清吴锋彭观良
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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