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MgIn2O4/MgAl2O4 composite substrate material and preparing method thereof

A composite substrate, mgin2o4 technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of less use, increased device volume, lattice mismatch, etc., and achieves easy operation and simple preparation process. Effect

Inactive Publication Date: 2004-09-15
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

[0009] (2) Due to MgAl 2 o 4 The lattice mismatch between crystal and GaN is up to 9%, and the overall performance is not as good as that of α-Al 2 o 3 , and thus less used;
[0010] (3) The above oxide substrates are all non-conductive, making the device difficult to manufacture, and also increases the volume of the device, resulting in a lot of waste of raw materials

Method used

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  • MgIn2O4/MgAl2O4 composite substrate material and preparing method thereof

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Embodiment Construction

[0024] figure 1 is a schematic diagram of a pulsed laser deposition (PLD) system used in the present invention. The mechanism of the PLD method is to first pass a KrF excimer laser with a pulse width of 25-30ns (laser wavelength is 248nm) through the lens at about 10J / cm 2 The energy density concentrates the light, and irradiates the MgIn in the vacuum device through the optical window. 2 o 4Target material, after the target material absorbs the laser light, it becomes a high-temperature molten state due to electronic excitation, so that the surface of the material is evaporated and gasified, and the gaseous particles are released and diffused in the form of columns. Properly heated MgAl placed at a few centimeters 2 o 4 On a single crystal substrate, attach and accumulate to deposit MgIn 2 o 4 film.

[0025] Composite substrate material MgIn prepared by pulse laser deposition of the present invention 2 o 4 / MgAl 2 o 4 Specific

[0026] The process flow is as follo...

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Abstract

MgIn2O4 covers MgAl2O4 monocrystal constitutes composite substrate material. Method for preparing the said material includes following steps: MgIn2O4 covering layer is formed on substrate of MgAl2O4 monocrystal through deposition process by using pulsed laser. Then, through high temperature annealing, crystallized MgIn2O4 film is obtained on substrate of MgAl2O4 monocrystal. The method possesses features of simple technique and easy of implementation. The composite MgIn2O4 / MgAl2O4 substrate is suitable to epitaxial growth of GaN in high quality.

Description

technical field [0001] The invention relates to a MgIn used for the epitaxial growth of InN-GaN-based blue light semiconductor 2 o 4 / MgAl 2 o 4 Composite substrate material and its preparation method. Background technique [0002] Wide bandgap III-V compound semiconductor materials represented by GaN are receiving more and more attention. They will be used in blue and green light-emitting diodes and laser diodes, high-density information reading and writing, underwater communications, deep water detection, laser It has broad application prospects in printing, biological and medical engineering, as well as ultra-high-speed microelectronic devices and ultra-high-frequency microwave devices. [0003] Due to GaN's high melting point, high hardness, and high saturated vapor pressure, high temperature and high pressure are required to grow large-sized GaN bulk single crystals. The Polish High Pressure Research Center only produced strips with a width of 5 mm at a high tempera...

Claims

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Application Information

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IPC IPC(8): H01L21/00
Inventor 周圣明徐军李抒智杨卫桥彭观良周国清司继良杭寅赵广军刘世良邹军赵志伟
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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