Double-layer silicon nitride antireflection film and manufacture method thereof

A silicon nitride anti-reflection film technology, applied in the field of double-layer silicon nitride anti-reflection film and its preparation, can solve the problems of obtaining better passivation effect of double-layer film, and achieve the purpose of increasing passivation effect, increasing Absorb and reduce the effect of sunlight reflection effect

Inactive Publication Date: 2013-05-22
SHANGHAI ALEX NEW ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this SiO2/SiNx:H stacked double-layer film has not been able to obtain a better passivation effect at

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] The preparation process of the double-layer silicon nitride anti-reflection film of the present embodiment is as follows:

[0018] Select P-type (100) polished single crystal silicon wafer, PEVCD RF frequency 13.56MHz, voltage 1080V, vacuum degree 165Pa, silane diluted with nitrogen (volume fraction 2.5%, silane flow rate 800ml / min) and pure ammonia as reaction gases Set the constant deposition temperature to 400°C, the constant deposition pressure to 1300mtorr, and the constant deposition power to 5000W, and adopt the PEVCD process to sequentially set the gas flow ratio of ammonia and silane to 4 in the direction of travel of the polished single crystal silicon wafer : 1, the corresponding deposition time is 80s, and the gas flow ratio of ammonia gas and silane is 8: 1, the corresponding deposition time is 650s, and the double-layer silicon nitride anti-reflection film of the present embodiment is obtained;

[0019] The double-layer silicon nitride anti-reflection film...

Embodiment 2

[0021] The preparation process of the double-layer silicon nitride anti-reflection film of the present embodiment is as follows:

[0022] Select a P-type (100) polished single crystal silicon wafer, PEVCD RF frequency 13.56MHz, voltage 1080V, vacuum degree 165Pa, silane diluted with nitrogen (volume fraction 2.5%, silane flow rate 850ml / min) and pure ammonia as reaction gases Set the deposition temperature to be constant at 450°C, the deposition pressure to be constant at 1800mtorr, and the deposition power constant to be 6000W, and adopt the PEVCD process to sequentially set the gas flow ratio of ammonia and silane to 4.5 in the direction of travel of the polished single crystal silicon wafer : 1, the corresponding deposition time is 70s, and the gas flow ratio of ammonia gas and silane is 9: 1, the corresponding deposition time is 600s, and the double-layer silicon nitride anti-reflection film of the present embodiment is obtained;

[0023] The double-layer silicon nitride a...

Embodiment 3

[0025] The preparation process of the double-layer silicon nitride anti-reflection film of the present embodiment is as follows:

[0026] 1) Select a P-type (100) polished single-crystal silicon wafer, PEVCD RF frequency 13.56MHz, voltage 1080V, vacuum degree 165Pa, silane diluted with nitrogen (volume fraction 2.5%, silane flow rate 820ml / min) and pure ammonia as Reactive gas; set the deposition temperature to be constant at 420°C, the deposition pressure to be constant at 1500mtorr, and the deposition power to be constant at 5500W, and use the PEVCD process to sequentially set the gas flow ratio of ammonia gas to silane in the direction of travel of the polished single crystal silicon wafer is 4.2:1, corresponding to a deposition time of 75s, and the gas flow ratio of ammonia gas to silane is 8.5:1, corresponding to a deposition time of 620s, the double-layer silicon nitride anti-reflection film of this embodiment is obtained;

[0027] The double-layer silicon nitride anti-r...

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Abstract

The invention discloses a double-layer silicon nitride antireflection film and a manufacture method thereof. The double-layer silicon nitride antireflection film is composed of an upper-layer silicon nitride film and a lower-layer silicon nitride film, wherein the thickness of the lower-layer silicon nitride film is 10nm-15nm, the refractive index of the lower-layer silicon nitride film is 2.2-2.5, the thickness of the upper-layer silicon nitride film is 70nm-75nm, and the refractive index of the upper-layer silicon nitride film is 2.0-2.05. In manufacture, a polished mono-crystalline silicon piece is obtained, deposition temperature, deposition pressure intensity and deposition power are consistent, and a plasma enhanced chemical vapor deposition (PEVCD) process is adopted to set two group of ammonia and silane gas flow ratio parameters ordered from small to big and deposition time in the advancing direction of silicon wafers so as to manufacture the double-layer silicon nitride antireflection film. Under the condition that existing resources and other devices and materials are not added, the antireflection film identical in texture layers and different in performance parameter is manufactured in the same device through two process steps, accordingly crystalline silicon surface passivation effect is improved, sunlight reflecting effect of the crystalline silicon surface is reduced, absorption on long waves and short waves of the silicon wafers is increased, and the efficiency is improved.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a double-layer silicon nitride anti-reflection film and a preparation method thereof. Background technique [0002] In the field of photovoltaics, plasma-enhanced chemical vapor deposition (PECVD) is usually used to deposit silicon nitride films. The prepared silicon nitride films contain three elements such as Si, N, and H, and are usually expressed as SiNx:H films. The role of passivation also plays the role of anti-reflection. In practical applications, in order to reduce the optical loss, part of the passivation effect of the SiNx:H film is often sacrificed, so that the film exhibits better comprehensive photoelectric properties. Therefore, under the premise of meeting the optical requirements, the surface passivation effect of SiNx:H thin films should be improved as much as possible. Because silicon dioxide film has a better passivation effect than silicon nitride fi...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCY02P70/50
Inventor 戴熙明陈博武俊喜
Owner SHANGHAI ALEX NEW ENERGY
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