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Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same

A phase change layer and precursor technology, which is applied in the field of forming a phase change layer with germanium precursor and manufacturing a phase change memory with the same, and can solve problems such as difficulty in forming

Inactive Publication Date: 2008-06-04
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It may be difficult to form a GST layer with the required step coverage to fill a contact hole with a diameter of 100nm or less

Method used

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  • Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same
  • Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same
  • Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same

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Embodiment Construction

[0044] Various exemplary embodiments will now be described more fully with reference to the accompanying drawings in which some exemplary embodiments are shown. In the drawings, the thickness of layers and regions may be exaggerated for clarity.

[0045] Detailed illustrative embodiments are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments. This invention may, however, be embodied in many alternative forms and should not be construed as limited to only the exemplary embodiments set forth herein.

[0046] Thus, while the exemplary embodiments are capable of various modifications and alternative forms, embodiments thereof are shown by way of example in the drawings and will be described in detail herein. It should be understood, however, that there is no intent to limit example embodiments to the particular forms disclosed, but on the contrary, example embodiments are...

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Abstract

A method of forming a phase change layer using a Ge compound and a method of manufacturing a phase change memory device using the same are provided. The method of manufacturing a phase change memory device included supplying a first precursor on a lower layer on which the phase change layer is to be formed, wherein the first precursor is a bivalent precursor including germanium (Ge) and having a cyclic structure. The first precursor may be a cyclic germylenes Ge-based compound or a macrocyclic germylenes Ge-based, having a Ge-N bond. The phase change layer may be formed using a MOCVD method, cyclic-CVD method or an ALD method. The composition of the phase change layer may be controlled by a deposition pressure in a range of 0.001 torr-10 torr, a deposition temperature in a range of 150 DEG C. to 350 DEG C. and / or a flow rate of a reaction gas in the range of 0-1 slm.

Description

technical field [0001] Exemplary embodiments relate to a method of forming a phase change layer using a Ge precursor that can be deposited at a low temperature. Other exemplary embodiments relate to a method of manufacturing a phase change memory device using the same. Background technique [0002] The electrical resistance of the phase change material changes according to the state of the phase change material. Phase change materials can have two states: crystalline and amorphous. In each state, the phase change material has a different electrical resistance. The two states of a phase change material can be reversed depending on temperature. [0003] A phase change memory device includes a phase change layer formed of a phase change material to store bit data. [0004] An example of a conventional phase change material is Ge 2 Sb 2 Te 5 (GST). The GST layer may be formed using a physical vapor deposition (PVD) method. If the GST layer is formed using the PVD method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C11/56
CPCC23C16/45553H01L27/2436C23C16/45531G11C11/5678G11C13/0004H01L45/06H01L45/144C23C16/305H01L45/1683H01L45/1616H01L45/1233Y10T428/31678H10B63/30H10N70/231H10N70/023H10N70/8828H10N70/826H10N70/066
Inventor 申雄澈李在昊姜允善
Owner SAMSUNG ELECTRONICS CO LTD
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