High-throughput chemical vapor infiltration process based on parameter region control, application thereof and device adopting same

A technology of chemical vapor infiltration and parameter area, applied in the field of high-throughput chemical vapor infiltration process, application and device, can solve the problems affecting the densification process, time-consuming, different SiC deposition rate and microstructure, etc., to reduce the research cost, shorten the exploration cycle, and quickly optimize the effect of process parameters

Active Publication Date: 2017-08-18
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because there are many factors affecting the deposition process of the BN interface layer and the SiC substrate, such as deposition temperature, residence time, deposition pressure, etc., it is necessary to design a large number of orthogonal experiments and repeat many times to optimize the deposition process simply by repeated experiments. Characterizing the sample will take a lot of time, resulting in high experimental costs. At the same time, due to weather or deposition equipment, the stability of the depos

Method used

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  • High-throughput chemical vapor infiltration process based on parameter region control, application thereof and device adopting same
  • High-throughput chemical vapor infiltration process based on parameter region control, application thereof and device adopting same
  • High-throughput chemical vapor infiltration process based on parameter region control, application thereof and device adopting same

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Embodiment 1

[0023] In this embodiment, a high-throughput chemical vapor infiltration process based on parameter zone control includes the following steps:

[0024] 1. Regionalization of deposition parameters

[0025] A cold-walled CVI deposition furnace was used, and the deposition area was divided into different deposition intervals by carbon paper, so that the specific surface area (S V ) and residence time (τ) are different, changing the deposition temperature, deposition pressure, total flow rate, and precursor gas component ratio respectively can prepare high-throughput composite materials with different parameter systems and facilitate further rapid optimization of deposition parameters.

[0026] 2. Sample characterization and parameter optimization selection

[0027] High-throughput composite materials under different parameters were prepared by dividing the deposition area, and the samples in different deposition areas were measured and sliced ​​to characterize the deposition inc...

Embodiment 2

[0037] This embodiment is basically the same as Embodiment 1, especially in that:

[0038] see figure 1 with figure 2 , this embodiment is based on the high-throughput chemical vapor infiltration process controlled by the parameter area, and the specific steps are as follows:

[0039] a. Place folded carbon paper in the deposition area of ​​CVI deposition furnace 3, use carbon paper 5, and divide the deposition area into a set specific surface area Sv∈[103,105]m by changing the folding degree of carbon paper 5 -1 Then place a series of silicon carbide fiber prefabricated bodies with the same physical performance parameters as the deposition matrix in each deposition interval for 6 minutes, and then install the furnace. After the furnace is installed, vacuumize and check the air tightness of the system;

[0040] b. After confirming that the airtightness of the system meets the requirements, feed high-purity nitrogen gas until the system pressure is 80KPa, raise the temperatu...

Embodiment 3

[0044] This embodiment is basically the same as the previous embodiment, and the special features are:

[0045] In this example, large-size SiC / BN / SiC composite components are prepared based on the optimal deposition parameters of BN and SiC combined with the regional movement of the preform, see image 3 , the inner cavity of the CVI deposition furnace 3 used in this embodiment is sequentially arranged and connected in a straight line by the premixing zone T1, the reaction chamber T2 and the gas cooling zone T3. Moving the sealing area 7, the elongated large-size deposition substrate 6 can enter the premixing area T1 from the furnace wall of the CVI deposition furnace 3, then pass through the reaction chamber T2 and the gas cooling area T3 in sequence, and pass through the moving sealing area 7, thereby The deposition substrate 6 is continuously produced into large-scale composite components. This embodiment is used for the rapid and uniform densification of large-scale comp...

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Abstract

The invention discloses a high-throughput chemical vapor infiltration process based on parameter regional control, application thereof and a device adopting the same. The high-throughput chemical vapor infiltration process based on parameter region control comprises the following steps: folded carbon paper is utilized to divide a deposition area into deposition zones with different specific areas, fiber preforms of same types and dimensions are placed in each of the deposition zones at preset deposition temperature, deposition pressure and gas flow, so that region control within the retention time is realized, and high-throughput composite materials with different parameter systems are prepared in single experiment; the deposition rate and the microstructure of the carbon paper and the fiber preforms in the deposition zones are tested and characterized, quick and efficient parameter optimization of the retention time and the specific areas is realized, deposition parameters and deposition areas with better deposition characteristic and better densification characteristic are sought out, and a series of technological parameters are selected in an optimized manner. According to the high-throughput chemical vapor infiltration process based on parameter region control, application thereof and device adopting the same, optimized deposition parameters and deposition areas in combination with area movement of large-dimension fiber preforms are utilized, and finally rapid and uniform densification of large-dimension composite material components is realized.

Description

technical field [0001] The present invention relates to a chemical vapor infiltration (Chemical Vapor Infiltration, CVI) process and device design method, in particular to a high-throughput chemical vapor infiltration process, application and device, which are applied to high-throughput composite material design and parameter optimization and The technical field of rapid and uniform densification of composite materials. Background technique [0002] The process optimization cycle of traditional CVI process for preparing composite materials is long, and usually requires a large number of repeated experiments and repeated sample characterizations through a series of different parameter systems, resulting in very high cost and low efficiency for the preparation of composite materials. Taking the preparation of SiC / BN / SiC composite materials by CVI process as an example: firstly, it is necessary to prepare a BN interface layer with good bonding strength with both fibers and subs...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/52C23C16/34C23C16/32
CPCC23C16/325C23C16/342C23C16/455C23C16/52
Inventor 李爱军贾林涛王梦千白瑞成彭雨晴
Owner SHANGHAI UNIV
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