81 results about "Metal amides" patented technology

This invention relates to an improved process for producing ternary metal silicon nitride films by the cyclic deposition of the precursors. The improvement resides in the use of a metal amide and a silicon source having both NH and SiH functionality as the precursors leading to the formation of such metal-SiN films. The precursors are applied sequentially via cyclic deposition onto the surface of a substrate. Exemplary silicon sources are monoalkylamino silanes and hydrazinosilanes represented by the formulas: (R1NH)nSiR2mH4-n-m (n=1,2; m=0,1,2; n+m=<3); and (R32N—NH)xSiR4yH4-x-y (x=1,2; y=0,1,2; x+y=<3) wherein in the above formula R1-4 are same or different and independently selected from the group consisting of alkyl, vinyl, allyl, phenyl, cyclic alkyl, fluoroalkyl, silylalkyls.

The present invention relates to a method for forming a metal silicon nitride film according to a cyclic film deposition under plasma atmosphere with a metal amide, a silicon precursor, and a nitrogen source gas as precursors. The deposition method for forming a metal silicon nitride film on a substrate comprises steps of: pulsing a metal amide precursor; purging away the unreacted metal amide; introducing nitrogen source gas into reaction chamber under plasma atmosphere; purging away the unreacted nitrogen source gas; pulsing a silicon precursor; purging away the unreacted silicon precursor; introducing nitrogen source gas into reaction chamber under plasma atmosphere; and purging away the unreacted nitrogen source gas.

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

A process for the preparation of a Group 4 metal amide complex comprising a monovalent or divalent Lewis base ligand the steps of the process comprising contacting a Group 4 metal amide with a neutral source of a monovalent or divalent, Lewis base ligand group and a solid Lewis acid scavenging agent under amine elimination conditions to form a Group 4 metal amide complex containing at least one less amide group per metal moiety than the initial Group 4 metal amide.

A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02(R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of:wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.

A process for the preparation of Group 4 metal hydrocarbyl complex the steps of the process comprising contacting a Group 4 metal amide with a neutral source of a monovalent or divalent, Lewis base ligand group and a Lewis acid hydrocarbylating agent under conditions to form a Group 4 metal hydrocarbyl complex.

An ammonia synthesis catalyst having high activity is obtained by having a two-dimensional electride compound having a lamellar crystal structure such as Ca2N support a transition metal. However, since the two-dimensional electride compound is unstable, the stability of the catalyst is low. In addition, in cases where a two-dimensional electride compound is used as a catalyst support, it is difficult to shape the catalyst depending on reactions since the two-dimensional electride compound has poor processability. A composite which includes a transition metal, a support and a metal amide compound, wherein the support is a metal oxide or a carbonaceous support; and the metal amide compound is a metal amide compound represented by general formula (1).M(NH2)x  (1)(In general formula (1), M represents at least one metal atom selected from the group consisting of Li, Na, K, Be, Mg, Ca, Sr, Ba and Eu; and x represents the valence of M.).

Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors. Deposition using the same tin precursor and H2S deposited tin monosulfide, SnS, a material suitable for solar cells.

The present invention relates to a preparation of a metal-containing film via ALD or CVD processes. The present invention describes methods for the deposition via chemical vapor deposition or atomic layer deposition of metal containing films, such as, for example, metal silicate or metal silicon oxynitride films. In one embodiment, the method for depositing a metal-containing film comprises the steps of introducing into a reaction chamber, a metal amide precursor, a silicon-containing precursor, and an oxygen source wherein each precursor is introduced after introducing a purge gas.

Methods and reagents for photo-initiated carbonylation with carbon-isotope labeled carbon monoxide using weakly nucleophilic amines and alkyl / aryl iodides are provided. The resultant carbon-isotope labeled amides are useful as radiopharmaceuticals, especially for use in Positron Emission Tomography (PET). Associated kits for PET studies are also provided.

An ammonia synthesis catalyst having high activity is obtained by having a two-dimensional electride compound having a lamellar crystal structure such as Ca2N support a transition metal. However, since the two-dimensional electride compound is unstable, the stability of the catalyst is low. In addition, in cases where a two-dimensional electride compound is used as a catalyst support, it is difficult to shape the catalyst depending on reactions since the two-dimensional electride compound has poor processability. A composite which includes a transition metal, a support and a metal amide compound, wherein the support is a metal oxide or a carbonaceous support; and the metal amide compound is a metal amide compound represented by general formula (1). M(NH2)x . . . (1) (In general formula (1), M represents at least one metal atom selected from the group consisting of Li, Na, K, Be, Mg, Ca, Sr, Ba and Eu; and x represents the valence of M.)

A process in a resulting product of the process in which a hydrogen storage metal amide is modified by a ball milling process using an additive of TPP. The resulting product provides for a hydrogen storage metal amide having a coating that renders the hydrogen storage metal amide resistant to air, ambient moisture, and liquid water while improving useful hydrogen storage and release kinetics.

The invention relates to a method for preparing a heteroatom-doped carbon material at a room temperature. The method comprises the following steps: mixing a halogenated macromolecule and strong base with a strong polar solvent so as to obtain a mixture, grinding the mixture at the room temperature, and directly cleaning and drying after completion of grinding, so as to obtain the heteroatom-doped carbon material, wherein the halogenated macromolecule is polyvinylidene difluoride, polyvinylidene chloride or polyvinyl chloride, the strong base is alkali (earth) metal hydroxide, alkali (earth) metal alkoxide, alkali (earth) metal sulfide, alkali (earth) metal amides or alkali (earth) metal nitride, the strong polar solvent is N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide or nitrogen methyl pyrrolidone and the room temperature refers to 10-40 DEG C. According to the method, the raw materials are cheap and easy to obtain, the operation is simple, safety is high and the method is very suitable for industrial expanded production.

Described are methods and apparatuses for the stabilization of precursors, which can be used for the deposition of manganese-containing films. Certain methods and apparatus relate to lined ampoules and / or 2-electron donor ligands.