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Metal Precursor Solutions For Chemical Vapor Deposition

a technology of metal precursors and vapor deposition, which is applied in the direction of liquid/solution decomposition chemical coating, solid/suspension decomposition chemical coating, coating, etc., can solve the problems of stoichiometry errors, affecting the stoichiometry of deposited films, etc., and achieves the effect of convenient delivery

Inactive Publication Date: 2008-10-16
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011]an ability to tune the physical properties of the precursor solution such as viscosity for easy delivery.

Problems solved by technology

If in the fabrication process the reactions convert the metal source containing precursor to an insoluble or non-volatile product, or to a material of different chemical or physical properties, the elements contained in that product may not reach the substrate and the stoichiometry of the deposited film may not be correct.
The foregoing problems also may be encountered where the precursor is provided in a liquid solution and the solvent contains moieties which react with the metal or ligands of the precursor to produce undesirable reaction by-products.

Method used

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  • Metal Precursor Solutions For Chemical Vapor Deposition
  • Metal Precursor Solutions For Chemical Vapor Deposition
  • Metal Precursor Solutions For Chemical Vapor Deposition

Examples

Experimental program
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Effect test

example 1

Preparation of 1.0M solution of titanium isopropoxide in N-methyl-2-pyrrolidinone

[0050]To a 2 mL vial, a faint yellow orange solution of titanium isopropoxide (0.10 g, 0.35 mmol) and 0.35 mL N-methyl-2-pyrrolidinone (NMP) was prepared. The solution was kept at room temperature over night and did not show any visible change. FIG. 1 is a TGA of the 1.M solution of titanium isopropoxide in N-methyl-2-pyrrolidinone, suggesting a smooth vaporization process in the temperature range of 20 to 400° C. This vaporization behavior suggests the solution can be employed either via bubbling or direct liquid injection for chemical vapor deposition or atomic vapor deposition.

example 2

Preparation of 0.1M solution of tris(2,2,6,6-tetramethyl-3,5-heptanedionate)lanthanum in N-methyl-2-pyrrolidinone

[0051]To a 2 mL vial, a clear solution of La(thd)3) (0.05 g, 0.07 mmol) and 0.78 mL NMP was prepared. FIG. 2 is a TGA of 0.1M solution of tris(2,2,6,6-tetramethyl-3,5-heptanedionate)lanthanum in N-methyl-2-pyrrolidinone, indicating there are two vaporization processes, the first is mainly for NMP and the second tris(2,2,6,6-tetramethyl-3,5-heptanedionate)lanthanum. This vaporization behavior suggests the solution can be only employed via direct liquid injection for chemical vapor deposition or atomic vapor deposition.

example 3

Preparation of solutions of tetrakis(ethylmethylamino)zirconium in N-methyl-2-pyrrolidinone

[0052]Three solutions of tetrakis(ethylmethylamino)zirconium (TEMAZ) in NMP were prepared according to Table 1. All are clear yellow solutions.

TABLE 1TEMAZSample(g)NMP (g)A0.21.8B0.240.35C0.20.2

[0053]FIG. 3 shows TGA diagrams of the solutions, suggesting that direct liquid injection with a lower concentration is preferred.

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Abstract

Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This patent application claims the benefit of U.S. Provisional Patent Application Ser. No. 60 / 911,970 filed 16 Apr. 2007.BACKGROUND OF THE INVENTION[0002]The semiconductor fabrication industry continues to use metal source containing precursors for chemical vapor deposition processes including atomic layer deposition for fabricating conformal metal-containing films on substrates such as silicon, silicon oxide, metal nitride, metal oxide and other metal-containing layers using these metal source containing precursors. In the fabrication process, a particularly advantageous way of delivering multiple source containing precursors is to employ neat liquid source containing liquid metal precursors or solutions of metal source precursors dissolved in a solvent, flash to vaporize the mixture, and then deliver the resulting vapors to the reactor. If in the fabrication process the reactions convert the metal source containing precursor to an insol...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C18/44
CPCC23C16/16C23C16/18H01L21/67207C23C16/45525H01L21/0262
Inventor LEI, XINJIANQUINN, LIAMNORMAN, JOHN ANTHONY THOMASBURGOYNE, WILLIAM FRANKLINLAL, GAURI SANKARULMAN, MICHAELSPENCE, DANIEL P.
Owner VERSUM MATERIALS US LLC
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