Method of making a semiconductor device having a multicomponent oxide
Patent Information
- Authority / Receiving Office
- US · United States
- Current Assignee / Owner
- HEWLETT PACKARD DEV CO LP
- Publication Date
- 2010-06-08
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Abstract
Description
[0001] This application is a divisional of Ser. No. 10 / 799,811 filed Mar. 12, 2004, now U.S. Pat. No. 7,297,977, which is hereby incorporated by reference.INTRODUCTION
[0002] Semiconductor devices are used in a variety of electronic devices. For example, thin-film transistor technology can be used in liquid crystal display (LCD) screens. Some types of thin-film transistors have relatively slow switching speeds because of low carrier mobility. In some applications, such as LCD screens, use of thin-film transistors with relatively slow switching speeds can make it difficult to accurately render motion.BRIEF DESCRIPTION OF THE DRAWINGS
[0003] FIGS. 1A-1F illustrate various embodiments of a semiconductor device, such as a thin-film transistor.
[0004] FIG. 2 illustrates a cross-sectional schematic of an embodiment of a thin-film transistor.
[0005] FIG. 3 illustrates a method embodiment for manufacturing an embodiment of a thin-film transistor.
[0006] FIG. 4 illustrates an embodiment of an active ma...