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Synaptic device based on metal cation modified black phosphorus and preparation method thereof

A technology of metal cations and synaptic devices, which is applied in the field of artificial neural networks, can solve the problems of further improvement in related performance and fewer devices, and achieve excellent synaptic performance, simple and easy operation, and good environmental stability.

Active Publication Date: 2018-12-11
山东森格姆德激光科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] There are many theories about using electrical devices to simulate the related performance of synapses, but there are few actual devices, and the related performance needs to be further improved

Method used

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  • Synaptic device based on metal cation modified black phosphorus and preparation method thereof
  • Synaptic device based on metal cation modified black phosphorus and preparation method thereof
  • Synaptic device based on metal cation modified black phosphorus and preparation method thereof

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preparation example Construction

[0049] Please refer to figure 2 , the second aspect of the embodiment of the present invention provides a method for preparing a synaptic device based on metal cation-modified black phosphorus, including:

[0050] S01, providing a back gate electrode 1 and an isolation layer 2 disposed on the back gate electrode 1;

[0051] S02, transferring the black phosphorus flakes 31 onto the isolation layer 2;

[0052] S03. Spin-coat photoresist 7 over the black phosphorus flake 31 and the isolation layer 2 not covered by the black phosphorus flake 31, and form an electrode pattern 8 after exposure and development;

[0053] S04, depositing the electrode material, and then stripping off the photoresist to form the first electrode 4 and the second electrode 5 to obtain the synaptic device;

[0054] S05. Soak the synaptic device in a solution containing metal cations for 0.2-2 hours, take it out and dry it, and obtain a synaptic device based on metal cation-modified black phosphorus.

...

Embodiment 1

[0067] as attached figure 1 As shown, the present invention provides a synaptic device based on silver ion-modified black phosphorus. The device has a field effect tube structure, and the functional layer is a silver-ion-modified black phosphorus sheet. The device has a p-type or n-type doped silicon layer 1 , a silicon dioxide layer 2 , a silver ion-modified black phosphorus sheet 3 , a first electrode 4 and a second electrode 5 sequentially from bottom to top. The silicon layer has a thickness of 300 μm and a resistivity of 1-10 Ω·cm. The silicon dioxide layer has a thickness of 300 nm. The thickness of the black phosphorus flakes decorated with silver ions is 20nm. Both the first electrode and the second electrode are chromium / gold material, wherein the thickness of the chromium layer is 5nm, and the thickness of the gold layer is 40nm. That is, the first electrode and the second electrode are composite electrodes formed by stacking a chromium layer with a thickness of 5...

Embodiment 2

[0079] as attached figure 1As shown, the present invention provides a synaptic device based on iron ion-modified black phosphorus. The device has a field effect tube structure, and the functional layer is a black phosphorus sheet modified by iron ion. The device has a p-type or n-type doped silicon layer 1 , a silicon dioxide layer 2 , an iron ion-modified black phosphorus sheet 3 , a first electrode 4 and a second electrode 5 in sequence from bottom to top. The silicon layer has a thickness of 500 μm and a resistivity of 1-10 Ω·cm. The silicon dioxide layer has a thickness of 300 nm. The thickness of the black phosphorus flakes decorated with iron ions is 20nm. Both the first electrode and the second electrode are made of chromium / gold, wherein the thickness of chromium is 5nm, and the thickness of gold is 40nm. That is, the first electrode and the second electrode are composite electrodes formed by stacking a chromium layer with a thickness of 5 nm and a gold layer with a...

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Abstract

A metal cation modify black phosphorus-based synaptic device includes a back gate electrode as a front end of the synapse, An isolation layer and a functional layer sequentially arranged on the back gate electrode, and a first electrode as a reference electrode and a second electrode as a synaptic posterior end spaced apart on the functional layer, the channel structure formed between the first electrode and the second electrode exposing a part of the functional layer, the material of the functional layer comprising a metal cation modified black phosphorus sheet. The metal cation modified black phosphorus synaptic device provided by the invention has good environmental stability and excellent synaptic performance, and provides an important component device support with extremely practicalvalue for brain-like calculation. The invention also provides a preparation method of a synaptic device based on metal cation modified black phosphorus, which is simple and easy to operate.

Description

technical field [0001] The invention relates to the field of artificial neural networks, in particular to a synaptic device based on metal cation-modified black phosphorus and a preparation method thereof. Background technique [0002] With the rapid expansion of data information, modern computers based on von Neumann architecture are facing more and more severe challenges, mainly in terms of slow processing speed and high power consumption. As the center of human information processing, the human brain has great advantages that traditional computers cannot match, such as ultra-fast speed, ultra-low power consumption, ultra-high fault tolerance, self-learning, and no need for programming. Therefore, especially with the emergence of deep learning algorithms, brain-like computers that can learn, remember and flexibly process information like the human brain are the direction and goal of future computer development. Synapse is an important part of the human brain neural networ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/253H10N70/881H10N70/041
Inventor 张晗王慧德郭志男
Owner 山东森格姆德激光科技有限公司
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