Near-infrared light regulation synaptic transistor and preparation method thereof

A near-infrared light and transistor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as limited choices and achieve the effect of rich choices

Pending Publication Date: 2019-12-03
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing technologies for photonic synapses focus on ultraviolet (UV)-sensitive materials with relatively large band gaps, which limits the selection of photo-controlled materials for photo-controlled synaptic transistors with biomimetic functions.

Method used

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  • Near-infrared light regulation synaptic transistor and preparation method thereof
  • Near-infrared light regulation synaptic transistor and preparation method thereof

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preparation example Construction

[0035] The present invention also provides a method for preparing a near-infrared light-regulated synaptic transistor, comprising the following steps:

[0036] Step S1, setting MoSe on the substrate layer 2 / Bi 2 Se 3 / PMMA layer, where the MoSe 2 / Bi 2 Se 3 / PMMA layer is MoSe 2 / Bi 2 Se 3 A mixture of heterostructure and PMMA in chlorobenzene solution was prepared.

[0037] Step S2, in MoSe 2 / Bi 2 Se 3 A semiconductor layer is provided on the / PMMA layer.

[0038] Step S3, disposing a source and a drain on the semiconductor layer.

[0039] The concentration of the chlorobenzene solution of PMMA in the step S1 is 8-12 mg / ml, preferably 10 mg / ml.

[0040] MoSe in the step S1 2 / Bi 2 Se 3 The preparation method of the heterostructure is a thermal injection method, which specifically includes the following steps:

[0041] Step S11, Ph 3 Bi and (PhCH 2 ) 2 Se 2 Dissolved in oleylamine, sonicated to obtain the first mixed solution, the Ph 3 Bi, (PhCH 2 ) 2...

Embodiment 1

[0055] 0.05mol of Ph 3 Bi with 0.0375mol of (PhCH 2 ) 2 Se 2 Dissolve in 0.5mL, that is, 0.0015mol oleylamine, and perform ultrasonic treatment to obtain the first mixed solution. 0.05mol of MoO 2 (acac) 2 With 0.05mol of (PhCH 2 ) 2 Se 2Dissolve in 0.5 mL, namely 0.0015 mol oleylamine, and perform ultrasonic treatment to obtain the second mixed solution. Put the first mixed solution and the second mixed solution into an oven at 70 degrees centigrade and heat for 4 minutes. 5 ml of oleylamine and 0.5 ml of oleic acid were placed in a 100 ml three-necked round-bottomed flask, heated, kept at 140 degrees Celsius for 30 minutes, and then removed under the conditions of strong magnetic stirring and pure argon flow. The first mixed solution is quickly added to the reactor by a syringe equipped with a needle, reacted for 5 minutes at 280 degrees Celsius, and then the second mixed solution is quickly added to the reactor by a syringe equipped with a needle, reacted for 20 mi...

Embodiment 2

[0058] 0.04mol of Ph 3 Bi with 0.040mol of (PhCH 2 ) 2 Se 2 Dissolve in 0.5mL, that is, 0.0015mol oleylamine, and perform ultrasonic treatment to obtain the first mixed solution. 0.06mol of MoO 2 (acac) 2 With 0.04mol of (PhCH 2 ) 2 Se 2 Dissolve in 0.5 mL, namely 0.0015 mol oleylamine, and perform ultrasonic treatment to obtain the second mixed solution. Put the first mixed solution and the second mixed solution into an oven at 60 degrees centigrade and heat for 5 minutes. 3.6 milliliters of oleylamine and 0.4 milliliters of oleic acid were placed in a 100 milliliter three-necked round-bottomed flask, heated, kept at 130 degrees Celsius for 30 minutes, and then removed under conditions of strong magnetic stirring and pure argon flow. The first mixed solution is quickly added to the reactor by a syringe equipped with a needle, reacted for 6 minutes at 270 degrees Celsius, and then the second mixed solution is quickly added to the reactor by a syringe equipped with a n...

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Abstract

The invention discloses a near-infrared light regulation synaptic transistor and a preparation method thereof. The preparation method of the transistor comprises the following steps of: preparing a MoSe2 / Bi2Se3 heterostructure; preparing a chlorobenzene solution of PMMA, and then mixing the MoSe2 / Bi2Se3 heterostructure into the chlorobenzene solution of PMMA; arranging a MoSe2 / Bi2Se3 / PMMA layer onthe Si / SiO2 substrate layer, and performing annealing for 30-50 minutes at the temperature of 100-140 DEG C; arranging a semiconductor layer on the MoSe2 / Bi2Se3 / PMMA layer; arranging a source electrode and a drain electrode on the semiconductor layer. According to the invention, the synaptic device based on the MoSe2 / Bi2Se3 topological insulator material shows an obvious synaptic plasticity characteristic controlled by near-infrared light, regulation and control of the near-infrared light intensity enable the photonic synaptic device to achieve conversion from short-term memory correspondingto the short-term plasticity STP to long-term memory corresponding to the long-term plasticity LTP, and a hardware basis is provided for a light-operated neural architecture and application of the light-operated neural architecture in neuromorphic calculation.

Description

technical field [0001] The invention relates to the field of semiconductor transistors, in particular to a near-infrared light-regulated synaptic transistor and a preparation method thereof. Background technique [0002] Neurally inspired computing can mimic the core features of efficiency, resilience, and multifunctionality in the human brain, which can overcome data traffic bottlenecks in von Neumann computing systems. Using novel artificial devices to build neuroinspired architectures that ensure lower energy consumption and higher density for memory and learning. In the human brain, information is collected and temporarily stored in the hippocampus to learn from short-term memory (STM) to long-term memory (LTM) through different stimuli. To achieve artificial synapse recognition for learning and memory in electronic devices, plasticity across different timescales is necessary. Thus, short-term plasticity (STP) modulates transient dynamic effects during synaptic transmi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L31/00H01L31/08H01L31/09H01L21/336
CPCH01L29/78H01L29/0603H01L29/0684H01L31/00H01L31/08H01L31/09H01L29/66477
Inventor 韩素婷周晔王燕王展鹏周黎吕子玉宫悦
Owner SHENZHEN UNIV
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