SPR neural synaptic device based on a-SiOx memristor effect and preparation method thereof

A technology of neural synapse and memristor, which is applied in the field of bionic devices, can solve the problems of small signal processing bandwidth and signal transmission crosstalk, and achieve the effect of large signal processing bandwidth, large bandwidth, and avoiding grazing incidence

Active Publication Date: 2018-12-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above, the present invention provides a bionic synapse based on a-SiO for the problems of small signal processing bandwidth and prone to crosstalk in the signal transmission process when existing memristor-based bionic synapses work. x Light-reading SPR neurosynaptic device with memristive effect and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SPR neural synaptic device based on a-SiOx memristor effect and preparation method thereof
  • SPR neural synaptic device based on a-SiOx memristor effect and preparation method thereof
  • SPR neural synaptic device based on a-SiOx memristor effect and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A SPR neurosynaptic device based on a-SiOx memristive effect, its structure is as follows figure 1 Shown: including a memristor and a K9 glass prism 6 arranged above the memristor. In this embodiment, the K9 glass prism 6 is a triangular prism processed from K9 optical glass, and the memristor is bottom-up With "bottom electrode 1 / first a-SiO x Resistive switch layer 2 / second a-SiO x Resistive variable layer 3 / top electrode 4" vertical four-layer structure, in this embodiment the top electrode 4 is metal silver Ag deposited on the bottom surface of K9 glass prism 6, the second a-SiO x The resistive layer 3 is a-SiO containing Ag nanoparticles x thin film with a volume fraction of Ag nanoparticles of 40%, the first a-SiO x The resistive switch layer 2 is a-SiO containing Ag nanoparticles x film, whose volume fraction of Ag nanoparticles is 5%, and the bottom electrode 1 is deposited on the first a-SiO x The metal platinum Pt on the bottom surface of the resistive la...

Embodiment 2

[0044] A based on a-SiO x SPR neurosynaptic device with memristive effect, its structure is as follows figure 1 Shown: comprise memristor and be arranged on the K9 glass substrate 5 above described memristor and be arranged on the K9 glass prism 6 above described K9 glass substrate 5, in the present embodiment, K9 glass prism 6 is made of K9 The triangular prism processed from optical glass, the K9 glass substrate 5 is also processed from K9 optical glass, the K9 glass substrate 5 and the K9 glass prism 6 are preferably bonded with a refractive index matching liquid; while the upper has "bottom electrode 1 / first a-SiO x Resistive switch layer 2 / second a-SiO x Resistive variable layer 3 / top electrode 4" vertical four-layer structure. In this embodiment, the top electrode 4 is metal silver Ag deposited on the bottom surface of the crystalline silicon prism 6, and the second a-SiO x The resistive layer 3 is a-SiO containing Ag nanoparticles x thin film with a volume fraction ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to view more

Abstract

The invention provides a SPR neural synaptic device based on a-SiOx memristor effect and a preparation method thereof, belonging to the technical field of biomimetic devices. The invention combines K9glass prism with 'top electrode/a-SiOx: metal nanoparticle double resistive layer/bottom electrode' memristor structure coupling, so the optical signal is allowed to be injected into the double resistive layer through the K9 glass prism under the electric modulation, A surface plasmon resonance (SPR) effect is utilize to read that dielectric constant change information of the resistive layer during the working process of the device, thereby realizing the optical read of the synaptic weight of the device. The 'electrically modulated, optically read' synaptic device of the invention has the advantages that the traditional 'electrically modulated, electrically read' synaptic device cannot be compared with, because the synaptic device not only has the characteristics of low energy consumptionand non-volatility of the traditional memristor, but also has the advantages of large signal processing bandwidth and strong electromagnetic interference resistance when the light is used as an information carrier.

Description

technical field [0001] The invention belongs to the technical field of bionic devices, in particular to a-SiO-based x SPR neurosynaptic device with memristive effect and its preparation method. Background technique [0002] Traditional computers are based on the "Von Neumann Architecture". However, in the "Von Neumann Architecture", the data call and transmission between the information memory and the processor are connected through the bus, which makes the efficiency of information processing It is not only affected by the computing speed and storage speed of the processor, but also restricted by the information transmission capacity of the bus, forming the so-called "Von Neumann bottleneck". Although the amount of information processed by the human brain is not less than that of a computer, it is obviously more efficient and consumes less energy. To this end, researchers have constructed the concept of an intelligent computer, expecting the computer to learn neural netwo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/257H10N70/011
Inventor 李伟宋宇浩次会聚董湘袁余涵李东阳蒋向东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap