42 results about "Energy filtered transmission electron microscopy" patented technology

TEM FIB samples of a solid state material are subsequently thinned through a subsequent treatment step free of contamination and free of destruction to extremely thin thicknesses through the alternate-sided bombardment of the sample surfaces with an ion beam, with which high-resolution observation and analysis of the sample material with a TEM becomes possible.

A nanometer material stress test grid for a transmission electron microscope belongs to the field of nanometer material original position observation. The grid includes a supporting part, a drive part and a mechanical test part. The supporting part is a metal ring (1); the drive part is a thermal double-metal slice (2) formed by different linear expansibilities; one end of the drive part is fixed on the upper surface of the metal ring by a pressure bit I (4) and the other end is free; the other side of the metal ring utilizes a pressure bit II (5) to fix a suspension beam (3) with tested force and known elasticity modulus with the thermal double-metal slice in parallel, or the thermal double-metal slice and the suspension beam are arranged in parallel and are fixed on the same side of the metal ring by the pressure bit; all the clearance widths are 2 to 50 Mum and are symmetrically distributed on the center of a copper ring. The invention has the advantages of reliable performance, convenient mounting and simple structure can realize large angle tilting along the X and Y directions by utilizing a high resolution transmission electron microscope and acquire the stress dimension when acquiring a high resolution image of the microstructure change of nanometer material under stress action.

A calibration standard includes a silicon substrate having a plurality of defined regions and a plurality of calibration marks placed on respective defined regions of the silicon substrate. Each calibration mark comprises a different calibration dimension indicator and a corresponding dimension identifier. A method for calibrating a transmission electron microscope using the standard comprises positioning the calibration standard in a viewing area of the transmission electron microscope and sequentially viewing the marks and adjusting the calibration of the microscope for each mark viewed.

The invention provides a method for preparing an observational sample of a transmission electron microscope. The method provided by the invention comprises the following steps of: providing a semiconductor device which needs to be observed and comprises a substrate and a graphic layer on the substrate; fixing a new substrate on the graphic layer to form a new semiconductor device; removing the substrate; observing the exposed graphic layer and determining a graphic area which needs to be further observed by the transmission electron microscope; cutting and thinning the new semiconductor device along the vertical cross-section direction of the new semiconductor device to expose the cross section of the graphic area which is on the exposed graphic layer and needs to be further observed by the transmission electron microscope; then forming the observational sample with the thickness which satisfies the observation requirement of the transmission electron microscope. The method for preparing the observational sample of the transmission electron microscope, provided by the invention, can assure the accuracy of data including graphic line width and the like which are obtained through the TEM (Transmission Electron Microscope) observation.

A method of preparing a transmission electron microscopy (TEM) sample from a semiconductor structure may include milling a region of the semiconductor structure with a focused ion beam and generating the transmission electron microscopy (TEM) sample. The focused ion beam providing the milling may include a rotation angle relative to the crystallographic axis of the semiconductor structure. A transmission electron microscopy image of a cross-sectional plane of the generated transmission electron microscopy (TEM) sample may be generated using a transmission electron microscope, whereby the transmission electron microscopy image of the cross-sectional plane includes an image projection-free region based on the rotation angle.

The invention provides a membrane pore structure and a porosity testing method based on CLSM (confocal laser scanning microscopy), comprising: preparing a sample, observing the sample, processing data and the other steps. Traditional testing methods include scanning electron microscopy, transmission electron microscopy, mercury intrusion method, nitrogen adsorption method and other methods and have their respective disadvantages; for example, high pressure required in the testing process of the mercury intrusion method may deform membrane structure; sample preparation in the transmission electron microscopy and scanning electron microscopy is high in time consumption and results in big damage to samples. Membrane pore structure and porosity are tested by means of confocal laser scanning microscopy, it is only required to perform single dyeing on a sample under test with fluorescent dye, information in the sample can be acquired without destroying the sample, operating is simple, and little damage is caused to the sample; in addition, sample testing herein has no need for drying, namely, a sample can be tested in an environment similar to a membrane when a liquid separation membrane is under test, and the results are more accurate and reliable.

The invention discloses a transmission electron microscopy sample preparation method capable of detecting a Damascus seed crystal layer and a barrier layer, which includes the following steps: a diffusion barrier layer A and a seed crystal layer A are sequentially deposited again on a Damascus structure on which the diffusion barrier layer and the seed crystal layer are already deposited according to the standard Damascus process; copper is filled in the Damascus structure, and the copper filled in the Damascus structure plays the supporting role in sample preparation to prevent the deformation of a sample; the Damascus structure is cut into the sample; and transmission electron microscopy is used for detecting the thicknesses of the barrier layers and the seed crystal layers and the deposit coverage topography. Since the transmission electron microscopy sample preparation method utilizes the copper to fill the Damascus structure, the surface of the seed crystal layers can be prevented from being injured by the environment and sample preparation before transmission electron microscopy observation, the copper plays the supporting role in the focused ion beam cutting process, and therefore can prevent the deformation of the Damascus structure caused by sample preparation, and a TEM (transmission electron microscopy) picture can truly reflect the thicknesses of the barrier layers and the seed crystal layers and the deposit coverage topography at the same time.

The invention relates to the technical field of semiconductor manufacturing, and in particular relates to a method for preparing a transmission electron microscopy (TEM) sample. The method comprises the steps of acquiring the position of a failure point of a failure chip and the position of a failure analysis reference point of a non-failure chip, polishing the failure chip to the part near the failure point along the direction vertical to a selected side, and polishing the non-failure chip to the part near the failure analysis reference point along the direction vertical to the selected side; sticking the front of the failure chip and the front of the non-failure chip together to form a structure to be tested; and putting the structure to be tested into a focused ion beam (FIB) machine with the polished surface being upward to prepare the TEM sample. Therefore, the TEM sample can be rapidly prepared; the most appropriate thickness can be found out when a picture with high resolution is shot, so that the quality of the picture with high resolution can be guaranteed.

The invention belongs to the technical field of advanced carbon materials and semiconductor technologies, and especially relates to a simple and stable preparation method of large-area monocrystalline graphene. The method is suitable for preparing millimeter level monocrystalline graphene. The method is characterized in that the monocrystalline graphene is prepared through a low pressure chemical vapor deposition technology at 1000DEG C by using methane (CH4) as a carbon source and hydrogen as a reducing gas. Acetone or ethanol ultrasonic treatment of copper foil is not needed, polishing and other pretreatment processes of the copper foil by adopting a complex electrochemical process are not needed, a several-hours and high-hydrogen flow annealing process is not needed, and only complete extraction of air in a reactor and guaranteeing of no introduction of gases in the heating process are needed, so the simple treatment method greatly reduces the nucleating density of graphene on the copper foil, and realizes growth of the monocrystalline graphene with the opposite side distance reaching 1mm in 2-3h. Results of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectrum analysis of a sample prove that the sample is the monocrystalline graphene and has few defects.

A system and method is described for providing automated sample preparation for plan view transmission electron microscopy. A sample wafer is microcleaved from a semiconductor wafer and mounted on a first support stub. Then the sample wafer is cut with an automated diamond sawing tool to expose a cross sectional view of the sample wafer. The sample wafer is removed from the first support stub and rotated to orient the sample wafer for plan view imaging. The rotated sample wafer is then remounted on a second support stub and cut with the automated diamond sawing tool to expose a plan view surface of the rotated sample wafer. The remounted sample wafer is subsequently prepared for focused ion beam (FIB) milling and plan view transmission electron microscopy imaging.

The invention relates to a characterization method and characterization device for metal silicide. The characterization method comprises the steps: providing a semiconductor structure which comprisesa silicon substrate, a metal gate layer, and metal silicide formed between the metal gate layer and the silicon substrate; generating an electron energy loss spectrum of the semiconductor structure; according to the electron energy loss spectrum, generating a first ratio curve of intensities of a plasma peak of the silicon substrate to intensities of a plasma peak of the metal silicide and a second ratio curve of intensities of the plasma peak of the metal gate layer to intensities of the plasma peak of the metal silicide under different energy loss positions and energy widths; selecting a corresponding energy loss position and energy width as detection parameters according to the first ratio curve and the second ratio curve; and carrying out energy filtering transmission electron microscope detection on the semiconductor structure by using the detection parameters so as to characterize the surface morphology and distribution condition of the metal silicide.

The invention discloses a connection hole test structure and a method for preparing transmission electron microscopy (TEM), aiming at solving the problem that the side wall of the connection hole Glue Layer and the thickness of Barrier seed can not be measured in case that the diameter of the connection hole is less than the thickness of a detected sample wafer. The structure comprises a primary hole, a calibration hole and a measurement hole, wherein all the bottom surfaces of the primary hole, the calibration hole and the measurement hole are axis symmetric figures; a plane vertical to the bottom surface exists; a straight line of the plane, which is intersected with the bottom surfaces, is the symmetry axis of all the bottom surfaces; the primary hole is the connection hole; the thickness of the calibration hole perpendicular to the direction of the plane is the thickness of the detected sample wafer for controlling the thickness of the detected sample wafer to reach the predetermined thickness; the thickness of the measurement hole perpendicular to the direction of the plane is equal to the sum of the thickness of the calibration hole and the primary hole; the measurement hole is required to be identical to the object to be measured in the connection hole for measuring the size of the connection hole.

The invention belongs to the technical field of alloy material detection and analysis, and particularly relates to a method for preparing a GH4169 high-temperature alloy TEM (transmission electron microscopy) sample. The method aims at solving the technical problems that the existing method for preparing the GH4169 high-temperature alloy TEM sample is low in efficiency, and that the quality is poor. The method aims to provide the economical, efficient, convenient and fast method for preparing the GH4169 high-temperature alloy TEM sample. The method for preparing the GH4169 high-temperature alloy TEM sample is characterized by comprising the following steps that after the thickness of a GH4169 high-temperature alloy sample is reduced to 70 to 80 mu m, an electrolysis double-spray method isused for thinning; used electrolyte is a mixed solution of 10-percent perchloric acid and 90-percent absolute ethyl alcohol. The TEM sample prepared by the method has high surface quality and large thin regions; the method is very applicable to the large-batch preparation of high-quality GH4169 high-temperature alloy TEM samples.

The invention provides a correlative light-and transmission electron microscopy sample treatment reagent and a CLEM detection method using the provided correlative light-and transmission electron microscopy sample treatment reagent. The reagent comprises a fixing agent, an embedding agent-hydrophilic alkaline resin GMA, sodium borohydride, nuclear fluorescent dye and transmission electron microscopy dye. The CLEM detection method comprises steps of fixing a sample, removing background fluorescence, dehydrating the sample, permeating, embedding, polymerizing, ultrathin slicing, laser confocal microscope imaging, acquiring a transmission electron microscopy image, and processing the image in later period. The method overcomes the difficulty of being compatible with a fluorescent signal and solves a problem of storage of a sample cell structure in the prior art. The sample has a strong fluorescent signal and complete ultramicrostructure information can be retained; the method adopts a simple but effective image normalization method, jointly uses existing fluorescent microscope and transmission electron microscopy so as to acquire highly consistent correlative light-and electron microscopy images. The method combines positioning information of a target molecule and ultramicrostructure information, thereby being very practical.