Preparation method of TEM (transmission electron microscopy) sample

A sample preparation and sample technology, applied in the field of TEM sample preparation, can solve the problems of inaccurate measurement and analysis results, easy damage to the sample surface, low success rate of sample preparation, etc., and achieve the effect of ensuring integrity

Active Publication Date: 2017-01-04
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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Problems solved by technology

[0008] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a TEM sample preparation method, which is used to solve the problem that the surface of the sample is easily damaged when preparing a TEM sample in the prior art, resulting in a low success rate of sample preparation and poor measurement and analysis. The problem with inaccurate results

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  • Preparation method of TEM (transmission electron microscopy) sample
  • Preparation method of TEM (transmission electron microscopy) sample
  • Preparation method of TEM (transmission electron microscopy) sample

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Embodiment Construction

[0046] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0047] see Figure 2 to Figure 12 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed ar...

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Abstract

The invention provides a preparation method of a TEM (transmission electron microscopy) sample. The preparation method comprises the following steps of providing a TEM prepared sample, and preparing a buffer layer above a target region of the TEM prepared sample; forming a metal protective layer on the surface of the TEM prepared sample so as to obtain the TEM sample, wherein the metal protective layer covers the buffer layer. In the preparation method of the TEM sample, since the buffer layer is arranged above the target region, the metal protective layer is deposited by use of ion beams withou causing any damage to the surface of the sample, so that the target integrity and the analysis result reliability are ensured. Furthermore, the buffer layer is molten by virtue of thermal treatment so as to be tightly combined with the sample, the thermal treatment temperature does not exceed the tolerable temperature of the sample, and no damage is caused to the sample.

Description

technical field [0001] The invention belongs to the field of semiconductors and relates to a TEM sample preparation method. Background technique [0002] Generally speaking, the failure of integrated circuits is inevitable in the process of development, production and use. With the continuous improvement of people's requirements for product quality and reliability, failure analysis is becoming more and more important. Through chip failure analysis, it can help integrate Circuit designers find design flaws, mismatches in process parameters, or improper design and operation. [0003] The significance of failure analysis is mainly manifested in the following aspects: 1) failure analysis is a necessary means to determine the failure mechanism of chips; 2) failure analysis provides necessary information for effective fault diagnosis; 3) failure analysis provides design engineers with continuous improvement or Repair the design of the chip to make it more consistent with the desi...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28
Inventor 何明郭炜孔云龙
Owner SEMICON MFG INT (SHANGHAI) CORP
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