Connection hole test structure and method for preparing transmission electron microscopy

Abstract

The invention discloses a connection hole test structure and a method for preparing transmission electron microscopy (TEM), aiming at solving the problem that the side wall of the connection hole Glue Layer and the thickness of Barrier seed can not be measured in case that the diameter of the connection hole is less than the thickness of a detected sample wafer. The structure comprises a primary hole, a calibration hole and a measurement hole, wherein all the bottom surfaces of the primary hole, the calibration hole and the measurement hole are axis symmetric figures; a plane vertical to the bottom surface exists; a straight line of the plane, which is intersected with the bottom surfaces, is the symmetry axis of all the bottom surfaces; the primary hole is the connection hole; the thickness of the calibration hole perpendicular to the direction of the plane is the thickness of the detected sample wafer for controlling the thickness of the detected sample wafer to reach the predetermined thickness; the thickness of the measurement hole perpendicular to the direction of the plane is equal to the sum of the thickness of the calibration hole and the primary hole; the measurement hole is required to be identical to the object to be measured in the connection hole for measuring the size of the connection hole.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a connection hole test structure and a TEM sample preparation method. Background technique [0002] The semiconductor manufacturing process is complex and the manufacturing cost is extremely high. In order to ensure the manufacturing quality, in the process of manufacturing semiconductor chips, test structures are usually manufactured on the wafer for testing after the manufacturing is completed. A semiconductor chip contains a lot of connection holes such as through holes (Via) and contact holes (CT), which have a significant impact on the quality of the semiconductor chip. At present, the industry generally manufactures a connection hole test structure in a semiconductor chip, and then uses the connection hole test structure to test the quality of the connection hole in the chip after the chip is manufactured. The connection holes are usually filled with fillers...

AI Technical Summary

Problems solved by technology

[0004] The present invention solves the problem that the thickness of the Gluelayer and Barrier seed on the side wall of the connection hole cannot be measured when the thickness of the connection hole is smaller than the thickness of the detection sample

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