Characterization method for metal silicide

Abstract

The invention relates to a characterization method and characterization device for metal silicide. The characterization method comprises the steps: providing a semiconductor structure which comprisesa silicon substrate, a metal gate layer, and metal silicide formed between the metal gate layer and the silicon substrate; generating an electron energy loss spectrum of the semiconductor structure; according to the electron energy loss spectrum, generating a first ratio curve of intensities of a plasma peak of the silicon substrate to intensities of a plasma peak of the metal silicide and a second ratio curve of intensities of the plasma peak of the metal gate layer to intensities of the plasma peak of the metal silicide under different energy loss positions and energy widths; selecting a corresponding energy loss position and energy width as detection parameters according to the first ratio curve and the second ratio curve; and carrying out energy filtering transmission electron microscope detection on the semiconductor structure by using the detection parameters so as to characterize the surface morphology and distribution condition of the metal silicide.

Description

Technical field [0001] The present invention mainly relates to the field of semiconductor detection, and particularly relates to a method for characterizing metal silicide. Background technique [0002] In large-scale integrated circuits, the contact resistance between metal and semiconductor will affect the noise frequency characteristics, output power, thermal stability, and reliability of semiconductor devices. Therefore, it is necessary to prepare electrode contacts with low resistivity. [0003] Metal silicide is a key material to reduce the contact resistance between metal and semiconductor. Among the metal silicides, titanium silicide (TiSi 2 ) Is widely used in the source, drain and gate of MOS (Metal Oxide Semiconductor) structure due to its excellent high temperature stability, low resistivity characteristics and self-aligned contact processing. TiSi 2 The composition and morphology have a great influence on the resistance value of the metal-silicon contact resistance, ...

AI Technical Summary

Problems solved by technology

However, ordinary TEM or STEM (Scanning Transmission Electron Microscope, Scanning Transmission Electron Microscope) imaging can only give interface structure and morphology information, not including interface composition information; EDS and EELS can give interface composition distribution information, but The operation process and result analysis are more complex

Combining TEM, STEM, EDS and even EELS to analyze the structure and composition of the metal-silicon interface is time-consuming and complicated

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