Characterization method for metal silicide

A metal silicide and characterization technology, applied in the field of metal silicide characterization, can solve problems such as time-consuming, complicated operation, complicated operation process and result analysis, and achieve the effect of improving image contrast

Active Publication Date: 2019-12-17
YANGTZE MEMORY TECH CO LTD
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ordinary TEM or STEM (Scanning Transmission Electron Microscope, Scanning Transmission Electron Microscope) imaging can only give interface structure and morphology information, not including interface composition information; EDS and EELS can giv

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Characterization method for metal silicide
  • Characterization method for metal silicide
  • Characterization method for metal silicide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0027] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0028] As shown in the present application and claims, unless the context clearly indicates exceptions, the words "a", "an", "an" and / or "the" do not specifically refer to the singular, but may also include the plural. Generally speaking, the terms "include" and "include" only suggest that the clearly identified steps and elements are included, and these steps and elements do not constitute an exclusive list, and t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a characterization method and characterization device for metal silicide. The characterization method comprises the steps: providing a semiconductor structure which comprisesa silicon substrate, a metal gate layer, and metal silicide formed between the metal gate layer and the silicon substrate; generating an electron energy loss spectrum of the semiconductor structure; according to the electron energy loss spectrum, generating a first ratio curve of intensities of a plasma peak of the silicon substrate to intensities of a plasma peak of the metal silicide and a second ratio curve of intensities of the plasma peak of the metal gate layer to intensities of the plasma peak of the metal silicide under different energy loss positions and energy widths; selecting a corresponding energy loss position and energy width as detection parameters according to the first ratio curve and the second ratio curve; and carrying out energy filtering transmission electron microscope detection on the semiconductor structure by using the detection parameters so as to characterize the surface morphology and distribution condition of the metal silicide.

Description

Technical field [0001] The present invention mainly relates to the field of semiconductor detection, and particularly relates to a method for characterizing metal silicide. Background technique [0002] In large-scale integrated circuits, the contact resistance between metal and semiconductor will affect the noise frequency characteristics, output power, thermal stability, and reliability of semiconductor devices. Therefore, it is necessary to prepare electrode contacts with low resistivity. [0003] Metal silicide is a key material to reduce the contact resistance between metal and semiconductor. Among the metal silicides, titanium silicide (TiSi 2 ) Is widely used in the source, drain and gate of MOS (Metal Oxide Semiconductor) structure due to its excellent high temperature stability, low resistivity characteristics and self-aligned contact processing. TiSi 2 The composition and morphology have a great influence on the resistance value of the metal-silicon contact resistance, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N23/04G01N23/00
CPCG01N23/04G01N23/00
Inventor 张正飞魏强民仝金雨
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap