A kind of sample preparation method for transmission electron microscope observation

Abstract

The invention provides a method for preparing an observational sample of a transmission electron microscope. The method provided by the invention comprises the following steps of: providing a semiconductor device which needs to be observed and comprises a substrate and a graphic layer on the substrate; fixing a new substrate on the graphic layer to form a new semiconductor device; removing the substrate; observing the exposed graphic layer and determining a graphic area which needs to be further observed by the transmission electron microscope; cutting and thinning the new semiconductor device along the vertical cross-section direction of the new semiconductor device to expose the cross section of the graphic area which is on the exposed graphic layer and needs to be further observed by the transmission electron microscope; then forming the observational sample with the thickness which satisfies the observation requirement of the transmission electron microscope. The method for preparing the observational sample of the transmission electron microscope, provided by the invention, can assure the accuracy of data including graphic line width and the like which are obtained through the TEM (Transmission Electron Microscope) observation.

Description

technical field [0001] The invention relates to the fields of semiconductor manufacturing technology and material analysis, in particular to a method for preparing a transmission electron microscope observation sample. Background technique [0002] Transmission electron microscope (TEM) is a very important tool and method for observing microstructure in the IC industry. It uses high-energy electron beams as light sources and electromagnetic fields as lenses to project accelerated and concentrated electron beams onto very thin samples. Above, electrons collide with atoms in the sample and change direction, resulting in solid angle scattering. The size of the scattering angle is related to the density and thickness of the sample, so images with different light and dark can be formed. Because the penetrating power of the electron beam is very weak, the sample used for the electron microscope must be made into an ultra-thin section with a thickness of about 100nm. [0003] In ...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved in the present invention is to provide a transmission electron microscope observation sample preparation method to solve the problem that the observation sample obtained by the sample preparation method of the prior art cannot be accurately positioned during TEM observation and whether the placement angle of the observation sample is horizontal.

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