6results about How to "Reduce sample preparation costs" patented technology

The invention discloses a preparation method of a high-entropy alloy EBSD sample. The method comprises the following steps: 1, cutting a high-entropy alloy sample to be prepared by adopting wire cut electrical discharge machining equipment; 2, polishing the high-entropy alloy sample to be prepared by waterproof abrasive paper to remove a surface oxide layer generated by linear cutting; thirdly, an electrolytic polishing device is built through a power source, an electrolytic bath, electrolyte, an electrode plate and a magnetic stirrer, and then the ground high-entropy alloy sample to be prepared is subjected to electrolytic polishing through a direct-current power source; and 4, the high-entropy alloy to-be-prepared sample obtained after electrolytic polishing is cleaned and blow-dried, and the high-entropy alloy EBSD sample is obtained. The high-entropy alloy EBSD sample is prepared by grinding the cut high-entropy alloy to-be-prepared sample, then carrying out electrolytic polishing and carrying out ultrasonic cleaning and blow-drying, the preparation method is simplified, the sample preparation speed and the sample preparation success rate are improved, the sample preparation cost is reduced, the high-quality surface high-entropy alloy EBSD sample is obtained, and the method is suitable for the field of preparation of the high-entropy alloy EBSD sample.

The utility model provides a lithofacies sample preparation cold inlaying mold which comprises a hollow cylindrical mold body, a partition plate is detachably installed in the mold body, and the partition plate can divide an inner cavity of the mold body into two independent spaces with the same size; two grooves are oppositely formed in the inner side face of the mold body and are formed in the axial direction of the mold body. The two ends of the partition plate are detachably installed in the two grooves. According to the technical scheme of the utility model, the problems that the gravity differentiation cannot be effectively controlled and the operation is complicated and many steps exist in the existing lithofacies cold embedding sample preparation technology are solved.

The invention discloses a pig iron analysis sample drilling method which comprises the following steps: respectively processing an upper plane and a lower plane which are parallel to each other on the upper surface and the lower surface of a pig iron, drilling a sampling hole in the upper plane and / or the lower plane through a drill bit, taking out scrap iron, and taking the scrap iron as a component detection sample. According to the pig iron analysis sample drilling method provided by the invention, the sample preparation efficiency is improved, the sample preparation cost is reduced, and the accuracy and stability of a detection result are improved.

The invention discloses an FIB sample seat of a rotatable net carrying table, which comprises a base and a net carrying support, and the base is provided with a nail table hole and a groove; the net carrying support is located at the front end of the groove, and a rotary button is arranged at the top of the groove. The groove and the grid carrying support are used for fixing the grid carrying table, the grid carrying support rotates to drive the grid carrying table to rotate, and the grid carrying table and a sample can be switched from a horizontal state to a vertical state, so that FIB reverse cutting operation can be carried out under one-time sample injection, the operation of breaking vacuum and changing samples in conventional FIB reverse cutting is reduced, the FIB reverse cutting step is simplified, and the FIB reverse cutting efficiency is improved. The TEM sample preparation time is shortened, and the sample preparation cost is saved.

This application relates to the field of semiconductor technology and provides a method for preparing and analyzing high-power bare chip failure analysis samples. The method includes: fixing the back surface of the high-power bare chip under test to the patch area of ​​a carrier substrate; wire bonding the functional electrode area on the amorphous back surface of the chip to the lead pads of the carrier substrate; preparing a polymer encapsulation layer on the amorphous back surface to obtain a molded high-power bare chip; peeling the molded high-power bare chip from the patch area of ​​the carrier substrate; grinding, fine polishing, and thinning the back surface to obtain the target failure analysis sample; powering the target failure analysis sample by connecting the lead pads outside the back surface area; observing the back surface area of ​​the target failure analysis sample to determine the failure location. This application not only avoids high-power bare chips being broken down or burned by high voltage and high current in failure analysis scenarios, but also significantly improves the sample preparation efficiency and quality of high-power bare chip failure samples.

The invention discloses a section scanning electron microscope sample suitable for a metal micro guide wire and a preparation method of the section scanning electron microscope sample. Belongs to the technical field of material microscopic analysis. The preparation method comprises the following steps: fixing the metal micro guide wires by constructing conductive rigid clamps, filling conductive adhesives among the conductive rigid clamps, and arranging a plurality of metal micro guide wires among the conductive adhesives; the metal micro guide wires are exposed out of the two ends of the conductive rigid clamp by 0.5-1.5 cm; and the diameter of the metal micro guide wire is 45-500 microns. The invention provides a preparation scheme of a metal microwire section scanning electron microscope sample, which is simple to operate and does not need any large equipment, and provides a rigid and conductive support system capable of performing directional electrolytic polishing for a soft and fine metal wire on the premise of not introducing external stress, not polluting the sample and not using expensive equipment. Therefore, the scanning electron microscope samples are efficiently prepared in batches at low cost, and the high-resolution characterization requirement is met.