This application relates to the field of
semiconductor technology and provides a method for preparing and analyzing high-power bare
chip failure analysis samples. The method includes: fixing the back surface of the high-power bare
chip under test to the patch area of a carrier substrate;
wire bonding the functional
electrode area on the amorphous back surface of the
chip to the lead pads of the carrier substrate; preparing a
polymer encapsulation layer on the amorphous back surface to obtain a molded high-power bare chip; peeling the molded high-power bare chip from the patch area of the carrier substrate;
grinding, fine
polishing, and
thinning the back surface to obtain the target
failure analysis sample; powering the target
failure analysis sample by connecting the lead pads outside the back surface area; observing the back surface area of the target failure
analysis sample to determine the failure location. This application not only avoids high-power bare chips being broken down or burned by
high voltage and
high current in failure analysis scenarios, but also significantly improves the
sample preparation efficiency and quality of high-power bare chip failure samples.