Focused ion beam cutting sample preparation method

A technology of focusing ion beams and samples, which is applied in the field of material sample preparation, can solve the problems of difficult sample preparation and difficult acquisition of three-dimensional atom probes, and achieve the effect of improving the success rate of sample preparation and protecting the integrity

Active Publication Date: 2020-06-02
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF10 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is that the existing three-dimensional atom probes are difficult to prepare samples and difficult to obtain a complete target structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Focused ion beam cutting sample preparation method
  • Focused ion beam cutting sample preparation method
  • Focused ion beam cutting sample preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0055] Reference herein to "one embodiment" or "an embodiment" refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present application. In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "top", "bottom" etc. is based on the orientation or positional relationship shown in the drawings, and is only for It ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Heightaaaaaaaaaa
Heightaaaaaaaaaa
Login to view more

Abstract

The invention relates to the technical field of material sample preparation, in particular to a focused ion beam cutting sample preparation method. The focused ion beam cutting sample preparation method comprises the following steps of: depositing a protective layer on the surface of a pretreated sample sheet to obtain a first sample; determining the position of a cutting center of the first sample, wherein the cutting center is a positioning center of a target structure; and cutting the first sample. According to the focused ion beam cutting sample preparation method provided by the embodiment of the invention, the protective layer is deposited on the surface of the sample sheet, so that the integrity of the target structure is protected in the sample preparation process, the positioningcenter of the target structure is determined as the cutting center to ensure that the finally obtained sample contains the target structure, and the sample preparation success rate is improved.

Description

technical field [0001] The invention relates to the technical field of material sample preparation, in particular to a focused ion beam cutting sample preparation method. Background technique [0002] With the continuous development of cutting-edge integrated circuit technology, the process and material structure of the mainstream transistor Fin Field-Effect Transistor (FinFET) become more and more complex. How to manufacture FinFET devices with better and more stable performance requires more precise selective etching process and stricter metal purity control process to realize complex work function metal thin film process. Therefore, for the research of small-size FinFET devices, high-precision characterization techniques are required for three-dimensional structure-component analysis, distribution analysis of trace doping elements in the characteristic structure, multi-layer metal surface and interface analysis, and process analysis. Analysis of material structure defect...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01Q30/20
CPCG01Q30/20
Inventor 黄亚敏董业民陈晓杰
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap