Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method for TEM sample

A sample and equipment technology, applied in the field of TEM sample preparation, can solve problems such as difficult to control the processing process accurately, sample damage, rough surface, etc., and achieve the effect of shortening the sample preparation time and improving the success rate

Active Publication Date: 2016-06-22
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] 1. The time required for the entire TEM sample preparation will increase by about 0.5-2 hours due to additional grinding, chemical solution treatment or reactive ion etching steps (about 50%-200% increase in sample preparation time);
[0008] 2. The process of grinding and chemical solution treatment is difficult to control accurately, and sometimes it will cause sample damage, such as over-grinding, scratches, lobes, rough surface, etc.;
[0009] 3. For chip samples that cannot be degraded and then used for FIB sample preparation, such as chips for reverse engineering or structural analysis, the success rate and quality of sample preparation will decrease

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for TEM sample
  • Preparation method for TEM sample
  • Preparation method for TEM sample

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0036] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0037] In the following specific embodiments of the present invention, please refer to image 3 , image 3 It is a flow chart of the preparation method of a TEM sample of the present invention; meanwhile, please refer to Figure 4-Figure 7 , Figure 4-Figure 7 is a preferred embodiment of the present invention according to image 3 Schematic diag...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed in the invention is a preparation method for a TEM sample. An inclined cutting opening is formed in a chip sample surface by using an ion beam and level removing and TEM sample preparation are carried out on a target area position directly, so that time for TEM sample preparation is substantially shortened; and the position and depth for level removing are controlled precisely, so that the success rate of sample preparation and the quality of the sample are improved. And the chip sample is protected from being damaged.

Description

technical field [0001] The invention relates to the technical field of integrated circuit sample analysis, and more specifically, to a method for preparing a TEM sample. Background technique [0002] TEM (Transmission Electron Microscope) has a wide range of applications in various fields including integrated circuit sample analysis, and double-beam focused ion beam (FIB) sample preparation is the most important TEM sample preparation method in the semiconductor field. . [0003] Since the size of the TEM sample is very small, only on the micron level, in order to better control the thickness of the TEM sample, it is generally required that the surface of the chip sample is about 0.1-0.5 microns away from the target analysis structure below it before the FIB sample preparation starts. However, due to the different process steps of many chip samples, there are often thick multi-layer materials above the target analysis structure, which causes the phenomenon that the sample s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01Q30/20
CPCG01Q30/20
Inventor 陈强孙蓓瑶
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products