This invention relates to the field of
semiconductor technology, providing a FIB
sample preparation method and equipment for CL testing, and a CL testing method, comprising: based on a staged FIB
processing approach, sequentially performing a preliminary cross-sectional
cutting and a cross-sectional trimming of the region to be characterized in the sample to be tested to obtain a target cross-section; wherein, the surface of the
initial sample cross-section obtained after the preliminary cross-sectional
cutting contains an amorphous layer and an
ion-implanted layer; after the cross-sectional trimming, the amorphous layer and
ion-implanted layer are removed, and the flatness and tilt angle of the target cross-section meet the CL testing objectives. Through staged
processing, first rough
processing followed by fine trimming, the amorphous layer and
ion-implanted layer generated due to lattice damage caused by high-energy
ion implantation during processing can affect the photoelectric properties of subsequent cross-sections. By setting corresponding trimming stages, a target cross-section with a flat surface and low damage to the sample surface, without affecting photoelectric properties, can be obtained, improving the adaptability and accuracy of CL testing.