Preparation method of observation sample for transmission electron microscope

An electron microscope and sample preparation technology, applied in the preparation of test samples, etc., can solve the problem of not being able to accurately define the cutting stop point of the sample, and achieve the effect of accurately judging the shape and measuring the size

Inactive Publication Date: 2011-05-18
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a sample preparation method for transmission electron mi

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  • Preparation method of observation sample for transmission electron microscope
  • Preparation method of observation sample for transmission electron microscope
  • Preparation method of observation sample for transmission electron microscope

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Embodiment Construction

[0019] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0020] A kind of transmission electron microscope observation sample preparation method described in the present invention can utilize multiple replacement modes to realize, and the following is to illustrate by preferred embodiment, certainly the present invention is not limited to this specific embodiment, and those in the art Common substitutions known to those of ordinary skill undoubtedly fall within the protection scope of the present invention.

[0021] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of illustration, the schematic diagrams are not partially enlarged according to the general scale, which should ...

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Abstract

The invention provides a preparation method of an observation sample for a transmission electron microscope, which comprises the following steps: the preparation of a testing structure, comprising: firstly, forming two rows of mark holes mutually in parallel in the course of manufacturing wafers, wherein the distance between the opposite edges of the two rows of the mark holes is the thickness of the observation sample finally obtained, and the graphic region to be observed is in parallel to the two rows of the mark holes and is arranged in the region between the two roles of the mark holes; and secondly, the deposition of the metal with obvious secondary electron image contrast and the preparation of the observation sample, comprising: eliminating the surface in parallel to the graphic region to be observed on the testing structure layer by layer and stopping the elimination action until after completely eliminating the tow rows of the mark holes, thereby obtaining the final observation sample. The preparation method of the observation sample for the transmission electron microscope can accurately judge the cutting stopping point through the mark holes and cannot cause the excessive cutting.

Description

technical field [0001] The invention relates to the fields of semiconductor manufacturing technology and material analysis, in particular to a method for preparing a transmission electron microscope observation sample. Background technique [0002] Transmission electron microscope (TEM) is a very important tool and method for observing microstructure in the IC industry. It uses high-energy electron beams as light sources and electromagnetic fields as lenses to project accelerated and concentrated electron beams onto very thin samples. Above, electrons collide with atoms in the sample and change direction, resulting in solid angle scattering. The size of the scattering angle is related to the density and thickness of the sample, so images with different light and dark can be formed. Because the penetrating power of the electron beam is very weak, the sample used for the electron microscope must be made into an ultra-thin section with a thickness of about 100nm. [0003] In ...

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Application Information

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IPC IPC(8): G01N1/32
Inventor 庞凌华段淑卿赵燕丽陆冠兰王玉科
Owner SEMICON MFG INT (SHANGHAI) CORP
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