Preparation method of observation sample for transmission electron microscope

Abstract

The invention provides a preparation method of an observation sample for a transmission electron microscope, which comprises the following steps: the preparation of a testing structure, comprising: firstly, forming two rows of mark holes mutually in parallel in the course of manufacturing wafers, wherein the distance between the opposite edges of the two rows of the mark holes is the thickness ofthe observation sample finally obtained, and the graphic region to be observed is in parallel to the two rows of the mark holes and is arranged in the region between the two roles of the mark holes; and secondly, the deposition of the metal with obvious secondary electron image contrast and the preparation of the observation sample, comprising: eliminating the surface in parallel to the graphic region to be observed on the testing structure layer by layer and stopping the elimination action until after completely eliminating the tow rows of the mark holes, thereby obtaining the final observation sample. The preparation method of the observation sample for the transmission electron microscope can accurately judge the cutting stopping point through the mark holes and cannot cause the excessive cutting.

Description

technical field [0001] The invention relates to the fields of semiconductor manufacturing technology and material analysis, in particular to a method for preparing a transmission electron microscope observation sample. Background technique [0002] Transmission electron microscope (TEM) is a very important tool and method for observing microstructure in the IC industry. It uses high-energy electron beams as light sources and electromagnetic fields as lenses to project accelerated and concentrated electron beams onto very thin samples. Above, electrons collide with atoms in the sample and change direction, resulting in solid angle scattering. The size of the scattering angle is related to the density and thickness of the sample, so images with different light and dark can be formed. Because the penetrating power of the electron beam is very weak, the sample used for the electron microscope must be made into an ultra-thin section with a thickness of about 100nm. [0003] In ...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a sample preparation method for transmission electron microscope observation to solve the problem that the cutting stop point of the sample cannot be accurately defined when preparing the sample

Images