The invention relates to the technical field of
semiconductor manufacturing, and discloses a
wafer doping control method based on intelligent feedback adjustment, and the method comprises the steps: carrying out the atomic scale imaging of the surface of a
wafer, so as to recognize a target
doping site, and generating an atomic
coordinate mapping graph, secondly, inputting the atomic
coordinate mapping graph into a multi-scale
simulation model to generate an initial process parameter set, and
processing the initial process parameter set by combining a
transformer model with a
reinforcement learning algorithm to obtain a dynamic process
data matrix; performing optimization
processing on the dynamic process
data matrix through a cross-material
process migration graph neural network to obtain a process parameter migration mapping relation, comparing measured data with a multi-
scale model prediction result through closed-loop feedback iteration, and outputting a corrected process parameter migration mapping relation and a multi-
scale model updating instruction; according to the
wafer doping method, the stability, the consistency and the yield of the wafer doping process are improved, and high accuracy and high uniformity of wafer doping are realized.