Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-throughput screening method for point defects of rare earth nickelate material

A screening method, nickel salt technology, applied in the direction of computer combinatorial chemistry, molecular entity identification, etc., to achieve high efficiency, easy process control, and cost reduction

Inactive Publication Date: 2021-06-04
SHANGHAI UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a high-throughput screening method for point defects of rare earth nickelate materials, which can clarify the relationship between the intrinsic point defects of rare earth nickelate materials, and characterize point defects through high-throughput screening. The atomic microstructure and electronic behavior are of great significance to enhance the oxidation resistance of rare earth nickelate films, increase the visible light transmittance, and regulate the metal-insulator transition temperature of rare earth nickelate films, which play a role in the practical application of detectors and smart windows. positive effects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-throughput screening method for point defects of rare earth nickelate material
  • High-throughput screening method for point defects of rare earth nickelate material
  • High-throughput screening method for point defects of rare earth nickelate material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.

[0027] Such as figure 1 As shown, the present invention provides a high-throughput screening method for point defects in rare earth nickelate materials, comprising the following steps:

[0028] Step S1, constructing a rare earth nickelate supercell model, and converting the rare earth nickelate supercell model into three-dimensional atomic coordinate information;

[0029] Step S2, performing structural optimization on the three-dimensional atomic coordinate information to obtain three-dimensional atomic coordinate information of a stable structure; performing static self-consistent calculation on the three-dimensional atomic coordinate information of the stable structure to obtain the structural energy of the rare earth nickel salt intrinsic point defect (ie, charge density data file); ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-throughput screening method for point defects of a rare earth nickelate material. The method comprises the following steps: constructing a rare earth nickelate super-cell model, and converting the rare earth nickelate super-cell model into three-dimensional atomic coordinate information; performing structure optimization on the three-dimensional atomic coordinate information to obtain three-dimensional atomic coordinate information of a stable structure; performing static self-consistent calculation on the three-dimensional atomic coordinate information of the stable structure to obtain rare earth nickelate intrinsic point defect structure energy; and screening the point defect position with the lowest energy as the structure position of the intrinsic point defect of the rare earth nickelate according to the energy size. Through high-throughput screening of defect positions, determination of quantification of rare earth nickelate intrinsic point defect formation energy and simulation of atomic micro-structures and electron behaviors, the method is of great significance in enhancement of oxidation resistance of the rare earth nickelate film, improvement of visible light transmittance and regulation and control of metal insulator transition temperature of the rare earth nickelate; and the method plays a positive role in practical application of a detector and an intelligent window.

Description

technical field [0001] The invention belongs to the technical field of inorganic functional materials, and in particular relates to a high-throughput screening method for point defects of rare earth nickelate materials. Background technique [0002] Rare earth nickelate is a perovskite structure system with metal-insulator transition. There are many external factors that induce metal-insulator transition, including light, temperature, electric field, pressure, magnetic field, etc. With the process of metal-insulator transformation, rare earth nickelate materials have obvious changes in optical, thermal, and electrical properties, so they have broad application prospects in storage, display, and sensing. [0003] The research on rare earth nickelates focuses on two aspects, one is the basic research on the metal-insulator phase transition mechanism, and the other is the applied research on the performance change before and after the phase transition. Rare earth nickelate mat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G16C20/20G16C20/60
CPCG16C20/20G16C20/60
Inventor 崔苑苑高彦峰任俊松刘肖
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products