77 results about "Metal–insulator transition" patented technology

A transistor including a metal-insulation transition material and a method of manufacturing the same. The transistor including a metal-insulator transition material may include a substrate, a insulation layer formed on the substrate, a source region and a drain region separately formed from each other on the insulation layer, a tunneling barrier layer formed on at least one surface of the source region and the drain region, a metal-insulator transition material layer formed on the tunneling barrier layer and the insulation layer, a dielectric layer stacked on the metal-insulator transition material layer, and a gate electrode layer formed on the dielectric layer.

The invention relates to the field of metamaterial devices and provides a switching-controllable THz wave metamaterial perfect absorber (MPA) and a control method thereof. The switching-controllable THz wave metamaterial perfect absorber comprises a substrate, an MIT (metal-insulator transition) layer positioned on the substrate, a dielectric layer positioned on the MIT phase change layer and metal opening resonance units positioned on the dielectric layer and being in cyclic arrangement, and the on/off of the absorber at the resonance frequencies of the metal opening resonance units is realized through changing the conductivity of the MIT phase change layer. According to the invention, the variation of the conductivities of the MIT phase-change material before and after phase change is utilized to change the absorptivity of the absorber, so that the THz MPA can be turned on/off near the resonance frequency of the metal opening resonance units, initiative control of the electromagnetic transfer characteristics of THz wave bands at the specific frequency, and accordingly, a larger on-off ratio or modulation depth can be obtained; and the switching-controllable MPA adopting the substrate-vanadium dioxide-dielectric layer-SRRs (Split Ring Resonators) four-layer structure can control the conductivity of vanadium dioxide through an external field so as to control the absorptivity of the MPA.

A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor.

A memory cell (10) comprising at least a source electrode (M_S) formed on a substrate (6); at least a drain electrode (M_D) formed on the substrate (6); at least a coupling layer (1) formed between the source electrode (M_S) and the drain electrode (M_D), and at least a gate electrode (M_G) formed on the substrate (6), wherein the coupling layer (1) comprises a transition-metal oxide exhibiting a filling-controlled metal-insulator transition property; the gate electrode (M_G) comprises an oxygen ion conductor layer (2), and the gate electrode (M_G) is arranged relative to the coupling layer (1) such that application of an electrical signal to the gate electrode (M_G) causes alteration of the oxygen vacancy (3) concentration in the coupling layer (1).

Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO₂ that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.

This invention generally relates to sensors made of granular thin films in the discontinuous phase. More particularly, the invention relates to microbolometers and displacement sensors fabricated from thin films that are close to the metal insulator transition (MIT) or metal semiconductor transition (MST) regime. Sensors of various designs have been fabricated according to the invention and may be used for deflection measurements, nano-indentation, visco-elastic measurements, topographical scanning, explosive detection, low abundance biomolecular detection, electromagnetic radiation detection and other similar detection and measurement systems.

Disclosed are a safety element for a battery, which is provided with material having a Metal-Insulator Transition (MIT) characteristic where resistance abruptly drops at or above a certain temperature, and a battery with such a safety element. This battery with an MIT safety element is turned into a stable discharged state when it is exposed to an elevated temperature or a battery temperature rises due to external impact, so that it can ensure its safety.

Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.

Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.

Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device that generates an abrupt MIT at a temperature equal to or greater than a critical temperature and is connected to a current driving device to control the flow of current in the current driving device, a transistor that is connected to the MIT device to control the self-heating of the MIT device after generating the MIT in the MIT device, and a resistor connected to the MIT device and the transistor.

An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof.

A power device package controls heat generation of a power device using a semi-permanent metal-insulator transition (MIT) device instead of a fuse, and emits heat generated by the power device through a small-sized heat sink provided only in one region on the power device, thereby ensuring excellent dissipation of heat. Therefore, the power device package can be usefully applied to any electric/electronic circuit that uses a power device.

Provided are an electrical and/or electronic system protecting circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove high-frequency noise with a voltage greater than a rated standard voltage received via a power line or a signal line of an electrical and/or electronic system, and the electrical and/or electronic system including the electrical and/or electronic system protecting circuit. The abrupt MIT device of the electrical and/or electronic system protecting circuit abrupt is connected in parallel to the electrical and/or electronic system to be protected from the noise. The electrical and/or electronic system protecting circuit bypasses toward the abrupt MIT device most of the noise current generated when the voltage greater than the rated standard voltage is applied, thereby protecting the electrical and/or electronic system.

Provided are a high current control circuit including a metal-insulator transition (MIT) device, and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high current control circuit, and a heat generation problem can be solved. The high current control circuit includes the MIT device connected to a current driving device and undergoing an abrupt MIT at a predetermined transition voltage; and a switching control transistor connected between the current driving device and the MIT device and controlling on-off switching of the MIT device. By including the metal-insulator transition (MIT) device, the high current control circuit switches a high current that is input to or output from the current driving device. Also, the MIT device constitutes a MIT-TR composite device with a heat-preventing transistor which prevents heat generation and is connected to the MIT device.

A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.

A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material.

The invention discloses a method for preparing rare-earth-element-doped lanthanum-strontium-manganese-oxygen-system manganite magnetic resistance materials, and relates to a preparing method of the magnetic resistance materials. The method aims at solving the technical problems that the magnetic field sensitivity of materials substituted by current lanthanum-strontium-manganese-oxygen-system manganite magnetic resistance materials at the La position in a doped mode is low, namely an external magnetic field needing to be added for generating the magnetic resistance effect is high, the adding number is normally several Tesla, and the magnetic resistance effect only occurs within a narrow warm area scope nearby the metal-insulator transformation temperature. The method includes the steps of (1) weighing raw materials, and (2) burning the raw materials. By means of the method, the prepared magnetic resistance materials are high in magnetic field sensitivity, and the magnetic resistance effect can be generated when the magnetic field is low; compared with an existing La-position doped substitution LaSrMnO system, the magnetic field is reduced by one magnitude order; the magnetic resistance effect of the magnetic resistance materials can occur in the warm area scope with the wide metal-insulator transformation temperature. The method is applied to magnetic resistance material preparing.

Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode (200) and an outlet electrode (300), which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode (400), which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.