The present application relates to the field of integrated circuits and photoelectric detection technology, in particular to a low-
noise hybrid domain
CMOS detector readout circuit.The circuit includes a
capacitance feedback transimpedance amplification unit, a
switched capacitor reference unit, an analog domain readout unit, a
time domain quantization unit and an output selection unit.The transimpedance amplification unit converts the pixel current into
voltage.The
switched capacitor reference unit filters out the reference
voltage noise in the reset stage and maintains the reference potential in the integration stage.The analog domain readout unit outputs analog
voltage, and the
time domain quantization unit outputs digital time code through saturation time detection.The output selection unit defaults to output
analog signal, and switches to digital output when the
transimpedance amplifier output voltage reaches the preset threshold.The present application also provides a corresponding readout method.The present application can effectively filter out the reference
voltage source noise and power supply
ripple, significantly improve the
signal-to-noise ratio of micro-
light detection, realize
high dynamic range in a
single frame, significantly expand the linear response range of the
detector, and can be integrated on
chip.