The invention discloses a slew rate enhanced operational amplifier suitable for restraining electromagnetic interference. The operational amplifier consists of seventeen MOS (Metal Oxide Semiconductor) transistors, namely, first to eleventh PMOS (P-channel Metal Oxide Semiconductor) transistors M0, M1a, M1b, M2a, M2b, M5, M6, M7, M8, M9 and M10 and first to sixth NMOS (N-channel Metal Oxide Semiconductor) transistors M3a, M3b, M4a, M4b, M11 and M12, wherein differential-mode signals Vin+ and Vin- are input through gate electrode input ends Vp of the second to third PMOS transistors M1a and M1b, and gate electrode input ends Vn of the fourth to fifth PMOS transistors M2a and M2b respectively; spurious signals are filtered through amplification of a Recycling folded cascode amplification stage and an electromagnetic interference restraining stage; meanwhile, a slew rate is increased; and a signal is output through a high-gain output end Vout. Through adoption of the operational amplifier in a low-voltage and low-power-consumption mixed signal circuit, an electromagnetic interference restraining ability specific to signals can be enhanced while the slew rate is increased.