30results about How to "Increase carbon concentration" patented technology

A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.

The invention provides a carburizing method for a wind power gear used for wind power generation, which comprises the following steps: carrying out first carburizing treatment on the wind power gear to be treated under the atmosphere with carbon potential of 0.8%-1.1%, then carrying out first quenching treatment, further rising the temperature to 600 DEG C-660 DEG C, and carrying out first tempering treatment; then carrying out second carburizing treatment under the atmosphere with the carbon potential of 0.8%-1.0%, and carrying out second quenching treatment after the second carburizing treatment; and further carrying out second tempering treatment on the wind power gear at 150 DEG C-200 DEG C after the second quenching treatment. Compared with the prior art, the carburizing method is characterized by firstly carburizing the wind power gear for 30-40h under the atmosphere with the carbon potential of 0.8%-1.1%, and then uniformly dissolving and dispersing over-saturated carbon in martensite after the first high-temperature tempering so as to be conductive to the next step of the treatment; and further carburizing the wind power gear for 1-4h under the atmosphere with the carbon potential of 0.8%-1.0% after the first high-temperature tempering treatment, thereby further increasing the carbon concentration on the surface of the wind power gear and improving the surface strength during the second carburizing treatment.

A semiconductor structure having a via formed in a dielectric layer is provided. The exposed pores of the dielectric material along the sidewalls of the via are partially or completely sealed. Thereafter, one or more barrier layers may be formed and the via may be filled with a conductive material. The barrier layers formed over the sealing layer exhibits a more continuous barrier layer. The pores may be partially or completely sealed by performing, for example, a plasma process in an argon environment.

Provided is an agent for dispersing an electrically conductive carbon material, in which the agent consists of a polymer which has an oxazoline group in a side chain and which is obtained by using an oxazoline group-containing monomer such as that represented by formula (1) for example, and in which the agent exhibits excellent dispersion of an electrically conductive carbon material and produces a thin film that exhibits excellent adhesion to a current collection substrate when formed into a thin film together with the electrically conductive carbon material.

(In the formula, X denotes a polymerizable carbon-carbon double bond-containing group, and R¹-R⁴ each independently denote a hydrogen atom, a halogen atom, an alkyl group optionally having a branched structure having 1-5 carbon atoms, an aryl group having 6-20 carbon atoms, or an aralkyl group having 7-20 carbon atoms.)

An embodiment of the invention discloses a carburization processing method. Composite carburization is adopted in the carburization processing method. First a workpiece is placed in a carburization medium of 900-980 DEG C, thermal insulation and cooling are carried out, then the workpiece is continuously placed in the carburization medium of 900-980 DEG C, and thermal insulation is performed. After carburization for the first time, the surface of the workpiece has a certain carbon concentration distribution and macroscopic thickness. Meanwhile, carburization for the second time in the step (b) is utilized to improve carbon concentration of the surface of the workpiece, and accordingly macrohardness and surface hardness of the surface of the workpiece are improved. Experimental results show that the macroscopic thickness of the workpiece processed by the method is 0.78-1mm, and the hardness at the position of 0.15mm is larger than 700HV.

An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.

A surface-treated mold that includes a mold, a metal layer that is provided on a surface of the mold and contains at least one metal selected from nickel, chromium, tungsten and brass, and a carbon film that is provided on a surface of the metal layer, wherein the metal layer contains carbon, and the carbon concentration in the metal layer is higher between the boundary with the carbon film and the center of the metal layer than that between the boundary with the mold and the center of the metal layer.

The invention provides a preheating type graded gasification method which comprises the following steps: (a) introducing fuel (A) and a first gasifying agent (B) into a front-loading preheating chamber (2), and preheating so as to generate a preheated gas-solid mixture (CD); (b) performing gas-solid separation on the preheated gas-solid mixture (CD) by using a separation device (3) so as to form reductive fume (C) and preheated fuel (D); (c) introducing a second gasifying agent (E) and the preheated fuel (D) into an entrained-flow gasifier (1), and enabling the two components to react to generate a crude coal gas (G) and bottom slag (F); and (d) collecting the reductive fume (C) and the crude coal gas (G), and discharging the bottom slag (F) outside the entrained-flow gasifier (1). The invention further provides a preheating type graded gasification device. By adopting the preheating type graded gasification method and the preheating type graded gasification device provided by the invention, no burner is used, wide coal applicability is achieved, coal can be prepared easily, and product gas is rich in CH4.

A semiconductor device has at least two main carbon-rich regions and two additional carbon-rich regions. The main carbon-rich regions are separately located in a substrate so that a channel region is located between them. The additional carbon-rich regions are respectively located underneath the main carbon-rich regions. The carbon concentrations is higher in the main carbon-rich regions and lower in the additional carbon-rich regions, and optionally, the absolute value of a gradient of the carbon concentration of the bottom portion of the main carbon-rich regions is higher than the absolute value of a gradient of the carbon concentration of the additional carbon-rich regions. Therefore, the leakage current induced by a lattice mismatch effect at the carbon-rich and the carbon-free interface can be minimized.

A method of removing organic carbon and other contaminants from a water stream. The method comprises screening large solids from the stream. Pre-oxidation chemicals may then be added. A coagulant is fed into the stream. An activated carbon, preferably formed from lignite, is added by pumping a highly concentrated activated carbon slurry into the stream. The stream, including the activated carbon and coagulant, next flows into a clarifier, where the coagulant will flocculate and enmesh the activated carbon. The activated carbon adsorbs organic carbon and other contaminants, including bacteria, pharmacological agents, and hydrocarbons, as the stream flows through the clarifier. Eventually, the flocculate will agglomerate and settle out in the clarifier, where it, the enmeshed carbon, and the contaminants they contain may be removed. The stream's organic carbon content exiting the clarifier will be much reduced. Accordingly, less primary oxidizing agent will be needed to treat any remaining organic carbon.

To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.

A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.