31results about How to "Increase carbon concentration" patented technology

A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.

The aromatic hydrocarbon resin can be used as a coating material and a resist resin for a semiconductor, and has a high carbon concentration and a low oxygen concentration. A composition for forming an underlayer film for lithography that has excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed with the same, and a pattern forming method using the same are disclosed. An aromatic hydrocarbon is reacted with an aromatic aldehyde in the presence of an acidic catalyst, thereby providing an aromatic hydrocarbon resin that has a high carbon concentration of from 90 to 99.9% by mass and a low oxygen concentration of from 0 to 5% by mass. A composition for forming an underlayer film for lithography contains the resin and an organic solvent, an underlayer film is formed with the same, and a pattern forming method uses the same.

The invention provides a carburizing method for a wind power gear used for wind power generation, which comprises the following steps: carrying out first carburizing treatment on the wind power gear to be treated under the atmosphere with carbon potential of 0.8%-1.1%, then carrying out first quenching treatment, further rising the temperature to 600 DEG C-660 DEG C, and carrying out first tempering treatment; then carrying out second carburizing treatment under the atmosphere with the carbon potential of 0.8%-1.0%, and carrying out second quenching treatment after the second carburizing treatment; and further carrying out second tempering treatment on the wind power gear at 150 DEG C-200 DEG C after the second quenching treatment. Compared with the prior art, the carburizing method is characterized by firstly carburizing the wind power gear for 30-40h under the atmosphere with the carbon potential of 0.8%-1.1%, and then uniformly dissolving and dispersing over-saturated carbon in martensite after the first high-temperature tempering so as to be conductive to the next step of the treatment; and further carburizing the wind power gear for 1-4h under the atmosphere with the carbon potential of 0.8%-1.0% after the first high-temperature tempering treatment, thereby further increasing the carbon concentration on the surface of the wind power gear and improving the surface strength during the second carburizing treatment.

A semiconductor structure having a via formed in a dielectric layer is provided. The exposed pores of the dielectric material along the sidewalls of the via are partially or completely sealed. Thereafter, one or more barrier layers may be formed and the via may be filled with a conductive material. The barrier layers formed over the sealing layer exhibits a more continuous barrier layer. The pores may be partially or completely sealed by performing, for example, a plasma process in an argon environment.

Provided is an agent for dispersing an electrically conductive carbon material, in which the agent consists of a polymer which has an oxazoline group in a side chain and which is obtained by using an oxazoline group-containing monomer such as that represented by formula (1) for example, and in which the agent exhibits excellent dispersion of an electrically conductive carbon material and produces a thin film that exhibits excellent adhesion to a current collection substrate when formed into a thin film together with the electrically conductive carbon material.(In the formula, X denotes a polymerizable carbon-carbon double bond-containing group, and R1-R4 each independently denote a hydrogen atom, a halogen atom, an alkyl group optionally having a branched structure having 1-5 carbon atoms, an aryl group having 6-20 carbon atoms, or an aralkyl group having 7-20 carbon atoms.)

Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).

An embodiment of the invention discloses a carburization processing method. Composite carburization is adopted in the carburization processing method. First a workpiece is placed in a carburization medium of 900-980 DEG C, thermal insulation and cooling are carried out, then the workpiece is continuously placed in the carburization medium of 900-980 DEG C, and thermal insulation is performed. After carburization for the first time, the surface of the workpiece has a certain carbon concentration distribution and macroscopic thickness. Meanwhile, carburization for the second time in the step (b) is utilized to improve carbon concentration of the surface of the workpiece, and accordingly macrohardness and surface hardness of the surface of the workpiece are improved. Experimental results show that the macroscopic thickness of the workpiece processed by the method is 0.78-1mm, and the hardness at the position of 0.15mm is larger than 700HV.

Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).

There is provided a method of manufacturing a semiconductor device, including: forming a film containing a specific element, nitrogen, and carbon on a substrate, by alternately performing the following steps a specific number of times: a step of supplying a source gas containing the specific element and a halogen element, to the substrate; and a step of supplying a reactive gas composed of three elements of carbon, nitrogen, and hydrogen and having more number of a carbon atom than the number of a nitrogen atom in a composition formula thereof, to the substrate.

An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.

A semiconductor device has at least two main carbon-rich regions and two additional carbon-rich regions. The main carbon-rich regions are separately located in a substrate so that a channel region is located between them. The additional carbon-rich regions are respectively located underneath the main carbon-rich regions. The carbon concentrations is higher in the main carbon-rich regions and lower in the additional carbon-rich regions, and optionally, the absolute value of a gradient of the carbon concentration of the bottom portion of the main carbon-rich regions is higher than the absolute value of a gradient of the carbon concentration of the additional carbon-rich regions. Therefore, the leakage current induced by a lattice mismatch effect at the carbon-rich and the carbon-free interface can be minimized.

The invention provides a carburizing treatment method. The carburizing treatment method adopts a composite carburizing method. A workpiece is placed in a carburizing medium with the temperature being 900-980 DEG C at first, heat preservation and cooling are conducted, then the workpiece continues to be placed in the carburizing medium with the temperature being 900-980 DEG C, and heat preservation is conducted. According to the carburizing treatment method, after the first time of carburizing, the workpiece surface has the carbon concentration distribution and macro thickness to a certain extent. Meanwhile, the carbon concentration on the workpiece surface is increased through the second time of carburizing in the step (b), so that the macro hardness and surface hardness of the workpiece surface are improved. Experimental results show that the macro thickness of the workpiece treated through the method is 0.78-1 mm, and the hardness of the position, 0.15 mm thick, of the workpiece is greater than 700 HV.

A surface-treated mold that includes a mold, a metal layer that is provided on a surface of the mold and contains at least one metal selected from nickel, chromium, tungsten and brass, and a carbon film that is provided on a surface of the metal layer, wherein the metal layer contains carbon, and the carbon concentration in the metal layer is higher between the boundary with the carbon film and the center of the metal layer than that between the boundary with the mold and the center of the metal layer.

Methods for fabricating semiconductor devices may provide enhanced performance and reliability by recovering quality of a low-k insulating film damaged by a plasma process. A method may include forming a first interlayer insulating film having a trench therein on a substrate, filling at least a portion of the trench with a metal wiring region, exposing a surface of the metal wiring region and a surface of the first interlayer insulating film to a plasma in a first surface treatment process, then exposing the surface of the first interlayer insulating film to a recovery gas containing a methyl group (—CH3) in a second surface treatment process, and then forming an etch stop layer on the metal wiring region and the first interlayer insulating film.

The invention provides a preheating type graded gasification method which comprises the following steps: (a) introducing fuel (A) and a first gasifying agent (B) into a front-loading preheating chamber (2), and preheating so as to generate a preheated gas-solid mixture (CD); (b) performing gas-solid separation on the preheated gas-solid mixture (CD) by using a separation device (3) so as to form reductive fume (C) and preheated fuel (D); (c) introducing a second gasifying agent (E) and the preheated fuel (D) into an entrained-flow gasifier (1), and enabling the two components to react to generate a crude coal gas (G) and bottom slag (F); and (d) collecting the reductive fume (C) and the crude coal gas (G), and discharging the bottom slag (F) outside the entrained-flow gasifier (1). The invention further provides a preheating type graded gasification device. By adopting the preheating type graded gasification method and the preheating type graded gasification device provided by the invention, no burner is used, wide coal applicability is achieved, coal can be prepared easily, and product gas is rich in CH4.

The invention provides a preheating type gasification method which comprises the following steps: (a) introducing fuel (A) and a first gasifying agent (B) into a front-loading preheating chamber (2),and preheating so as to generate reductive fume (C) and preheated fuel (D); (b) introducing a second gasifying agent (E), the preheated fuel (D) and the reductive fume (C) into an entrained-flow gasifier (1), and carrying out reaction on the three components to generate crude coal gas (G) and bottom slag (F); and (c) collecting the crude coal gas (G), and discharging the bottom slag (F) outside the entrained-flow gasifier (1). The invention further provides a preheating type gasification gasification device. By adopting the preheating gasification method and the preheating gasification deviceprovided by the invention, the problems that a burner is short in service life and needs to be replaced at regular time are solved, wide coal applicability is achieved, coal can be prepared easily, high gasification efficiency and high carbon conversion rates are achieved, and in addition, no pure oxygen is needed.

A semiconductor device has at least two main carbon-rich regions and two additional carbon-rich regions. The main carbon-rich regions are separately located in a substrate so that a channel region is located between them. The additional carbon-rich regions are respectively located underneath the main carbon-rich regions. The carbon concentrations is higher in the main carbon-rich regions and lower in the additional carbon-rich regions, and optionally, the absolute value of a gradient of the carbon concentration of the bottom portion of the main carbon-rich regions is higher than the absolute value of a gradient of the carbon concentration of the additional carbon-rich regions. Therefore, the leakage current induced by a lattice mismatch effect at the carbon-rich and the carbon-free interface can be minimized.

There is provided a method of manufacturing a semiconductor device, including: forming a film containing a specific element, nitrogen, and carbon on a substrate, by alternately performing the following steps a specific number of times: a step of supplying a source gas containing the specific element and a halogen element, to the substrate; and a step of supplying a reactive gas composed of three elements of carbon, nitrogen, and hydrogen and having more number of a carbon atom than the number of a nitrogen atom in a composition formula thereof, to the substrate.

The aromatic hydrocarbon resin can be used as a coating material and a resist resin for a semiconductor, and has a high carbon concentration and a low oxygen concentration. A composition for forming an underlayer film for lithography that has excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed with the same, and a pattern forming method using the same are disclosed. An aromatic hydrocarbon is reacted with an aromatic aldehyde in the presence of an acidic catalyst, thereby providing an aromatic hydrocarbon resin that has a high carbon concentration of from 90 to 99.9% by mass and a low oxygen concentration of from 0 to 5% by mass. A composition for forming an underlayer film for lithography contains the resin and an organic solvent, an underlayer film is formed with the same, and a pattern forming method uses the same.

A method of removing organic carbon and other contaminants from a water stream. The method comprises screening large solids from the stream. Pre-oxidation chemicals may then be added. A coagulant is fed into the stream. An activated carbon, preferably formed from lignite, is added by pumping a highly concentrated activated carbon slurry into the stream. The stream, including the activated carbon and coagulant, next flows into a clarifier, where the coagulant will flocculate and enmesh the activated carbon. The activated carbon adsorbs organic carbon and other contaminants, including bacteria, pharmacological agents, and hydrocarbons, as the stream flows through the clarifier. Eventually, the flocculate will agglomerate and settle out in the clarifier, where it, the enmeshed carbon, and the contaminants they contain may be removed. The stream's organic carbon content exiting the clarifier will be much reduced. Accordingly, less primary oxidizing agent will be needed to treat any remaining organic carbon.

Methods for fabricating semiconductor devices may provide enhanced performance and reliability by recovering quality of a low-k insulating film damaged by a plasma process. A method may include forming a first interlayer insulating film having a trench therein on a substrate, filling at least a portion of the trench with a metal wiring region, exposing a surface of the metal wiring region and a surface of the first interlayer insulating film to a plasma in a first surface treatment process, then exposing the surface of the first interlayer insulating film to a recovery gas containing a methyl group (—CH3) in a second surface treatment process, and then forming an etch stop layer on the metal wiring region and the first interlayer insulating film.

An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.

The invention provides a rapid carburizing heat treatment process for a driving gear used in an automobile differential, comprising the following steps: 1) heating up; 2) strong infiltration; 3) diffusion; 4) quenching; 5) cleaning; 6) tempering. The carburizing period of the treatment process is obviously shortened, the production efficiency is improved, the output is increased, the energy saving effect is achieved, the carburizing cost is obviously reduced, and the economic benefit is significantly improved.

To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.

A surface-treated mold that includes a mold, a metal layer that is provided on a surface of the mold and contains at least one metal selected from nickel, chromium, tungsten and brass, and a carbon film that is provided on a surface of the metal layer, wherein the metal layer contains carbon, and the carbon concentration in the metal layer is higher between the boundary with the carbon film and the center of the metal layer than that between the boundary with the mold and the center of the metal layer.

To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.

A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.

The present application relates to a cyclic carburizing treatment method for a carburized layer on the surface of a heavy-duty gear. The surface of the gear to be treated is bombarded with supersonic particles before the gear to be treated is subjected to vacuum carburizing treatment, so that the surface of the gear to be treated is subjected to compound catalytic infiltration. The treatment causes plastic deformation on the surface of the gear to be treated, forming a composite modified layer with fine grains and many grain boundaries, which facilitates the diffusion and penetration of carbon atoms into the surface of the gear to be treated. After completing a cyclic carburizing cycle of composite catalysis-vacuum carburizing, by repeatedly performing multiple cyclic carburizing cycles of composite catalysis-vacuum carburizing, the surface of the gear to be treated generates a higher carbon concentration, a larger thickness, Carburized layer with strong surface hardness. The cyclic carburizing treatment method for the surface carburizing layer of a heavy-duty gear involved in the present application can obtain a higher carbon concentration, greater thickness, and greater surface strength and hardness in a relatively short period of time compared with the traditional atmosphere carburizing method. Carburized layer to meet the service requirements of heavy-duty gears.

An embodiment of the invention discloses a carburization processing method. Composite carburization is adopted in the carburization processing method. First a workpiece is placed in a carburization medium of 900-980 DEG C, thermal insulation and cooling are carried out, then the workpiece is continuously placed in the carburization medium of 900-980 DEG C, and thermal insulation is performed. After carburization for the first time, the surface of the workpiece has a certain carbon concentration distribution and macroscopic thickness. Meanwhile, carburization for the second time in the step (b) is utilized to improve carbon concentration of the surface of the workpiece, and accordingly macrohardness and surface hardness of the surface of the workpiece are improved. Experimental results show that the macroscopic thickness of the workpiece processed by the method is 0.78-1mm, and the hardness at the position of 0.15mm is larger than 700HV.