33results about How to "Excellent in heat resistance and etching resistance" patented technology

The material for forming an underlayer film for lithography of the present invention contains a compound represented by the following general formula (1).

(in formula (1), each X independently represents an oxygen atom or a sulfur atom, R¹ represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, and each R² independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, provided that at least one R² represents a hydroxyl group, each m is independently an integer of 1 to 4, n is an integer of 1 to 4, and p is 0 or 1.)

The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),

wherein R¹ represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R² independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each m2 is independently an integer of 0 to 7, in which at least one m² is an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R¹ and R² is a group having an iodine atom.

The present invention provides a film forming material for lithography comprising a compound having a group of the following formula (0):

A resin having a fluorene structure, a relatively high carbon concentration in the resin, a relatively high heat resistance and a relatively high solvent solubility has a structure represented by

wherein each of R₃ and R₄ independently denotes a benzene ring or a naphthalene ring, a carbon atom at the bridgehead of a fluorene backbone or (di)benzofluorene backbone is bonded with a carbon atom of each of other aromatic rings, and a carbon atom of each of aromatic rings of a fluorene backbone or (di)benzofluorene backbone is bonded with a carbon atom at the bridgehead of other fluorene backbone or (di)benzofluorene backbone. The resin can be applied to a wet process. Methods for producing the resin, for forming an underlayer film useful for forming a novel resist, and for pattern forming using the material, and an underlayer film excellent in heat resistance and etching resistance for multilayer resist are described.

A compound represented by the following formula (1).

(in formula (1), R¹ represents a 2n-valent group having 1 to 30 carbon atoms, R² to R⁵ each independently represent an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group or a hydroxyl group, provided that at least one R⁴ and/or at least one R⁵ represents an alkoxy group having 1 to 30 carbon atoms, m² and m³ are each independently an integer of 0 to 8, m⁴ and m⁵ are each independently an integer of 0 to 9, provided that m⁴ and m⁵ are not 0 at the same time, n is an integer of 1 to 4, and p² to p⁵ are each independently an integer of 0 to 2.)

A compound represented by the following formula (1).

(in formula (1), each R¹ independently represents a divalent group having 1 to 30 carbon atoms, each of R² to R⁷ independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a thiol group or a hydroxyl group, in which at least one R⁵ represents a hydroxyl group or a thiol group, each of m², m³ and m⁶ is independently an integer of 0 to 9, each of m⁴ and m⁷ is independently an integer of 0 to 8, m⁵ is an integer of 1 to 9, n is an integer of 1 to 4, and each of p² to p⁷ is independently an integer of 0 to 2.)

The present invention provides a compound represented by following formula (1),

wherein R¹ represents a 2n-valent group having 1 to 30 carbon atoms, each of R² to R⁵ independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R¹ to R⁵ represents a group including an iodine atom and at least one R⁴ and/or at least one R⁵ represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m² and m³ independently represents an integer of 0 to 8, each of m⁴ and m⁵ independently represents an integer of 0 to 9, provided that m⁴ and m⁵ do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p² to p⁵ independently represents an integer of 0 to 2.

The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),

wherein R¹ represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R² independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R² represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each m² is independently an integer of 0 to 7, provided that at least one m² is an integer of 1 to 7, and each q is independently 0 or 1.

A material for forming an underlayer film for lithography, including a cyanic acid ester compound obtained by cyanation of a modified xylene formaldehyde resin, a composition including the material, and a pattern forming method using the composition.

A compound represented by the following formula (1).

(in formula (1), each X independently represents an oxygen atom, a sulfur atom, or non-crosslinking, each R¹ is independently selected from the group consisting of a hydrogen atom, a halogen group, a nitro group, an amino group, a hydroxyl group, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms and combinations thereof, in which the alkyl group, the alkenyl group and the aryl group may have an ether bond, a ketone bond or an ester bond, each R² independently represents a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, a thiol group or a hydroxyl group, in which at least one R² represents a group having a hydroxyl group or a thiol group, each m is independently an integer of 1 to 7, each p is independently 0 or 1, each q is independently an integer of 0 to 4, and n is 0 or 1.)

The present invention provides a composition for resist underlayer film formation comprising a tellurium-containing compound or a tellurium-containing resin.

A film forming material for lithography, including a resin having a polybenzimidazole structure represented by the following formula (1).

Y and Z are each a single bond, a divalent linking group comprising a chalcogen atom, or a divalent linking group derived from a compound selected from an aromatic compound and the like, R¹ is independently a hydrogen atom, or a substituent T selected from the group consisting of a specified alkyl group and the like, a halogen atom, a nitro group, an amino group, a cyano group, a carboxylic acid group, a thiol group and a hydroxy group, wherein the alkyl group and the like each optionally include an ether bond, a ketone bond, an ester bond or a urethane bond, R² is a substituent T, m is an integer of 0 to 3, and n is an integer of 1 to 10000.

An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. A film forming material for lithography comprising a compound having a group of the following formula (0):

can solve the problem described above.

The resist material according to the present invention contains a compound represented by the following formula (1):

wherein each R⁰ is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used.

(in formula (0), each X independently represents an oxygen atom or a sulfur atom, or a non-crosslinked state, R¹ represents a 2n-valent group having 1 to 30 carbon atoms, or a single bond, each R⁰ independently represents a straight, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, a straight, branched or cyclic alkenyl group having 2 to 30 carbon atoms, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group or a hydroxyl group, the alkyl group, the alkenyl group and the aryl group each optionally include a cyanato group, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group, a hydroxyl group, an ether bond, a ketone bond or an ester bond, each m₁ is independently an integer of 0 to 4, in which at least one m₁ is an integer of 1 to 4, each m₂ is independently an integer of 0 to 3, n is an integer of 1 to 4, and each p is independently 0 or 1.)