33results about How to "Excellent in heat resistance and etching resistance" patented technology

Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).

The present invention provides a compound represented by following formula (1),wherein R1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R2 to R5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R1 to R5 represents a group including an iodine atom and at least one R4 and / or at least one R5 represent / represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m2 and m3 independently represents an integer of 0 to 8, each of m4 and m5 independently represents an integer of 0 to 9, provided that m4 and m5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p2 to p5 independently represents an integer of 0 to 2.

The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),wherein R1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, in which at least one m2 is an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R1 and R2 is a group having an iodine atom.

The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),wherein R1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, provided that at least one m2 is an integer of 1 to 7, and each q is independently 0 or 1.

The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

A compound represented by the following formula (1).(in formula (1), each X independently represents an oxygen atom, a sulfur atom, or non-crosslinking, each R1 is independently selected from the group consisting of a hydrogen atom, a halogen group, a nitro group, an amino group, a hydroxyl group, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms and combinations thereof, in which the alkyl group, the alkenyl group and the aryl group may have an ether bond, a ketone bond or an ester bond, each R2 independently represents a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 40 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, a thiol group or a hydroxyl group, in which at least one R2 represents a group having a hydroxyl group or a thiol group, each m is independently an integer of 1 to 7, each p is independently 0 or 1, each q is independently an integer of 0 to 4, and n is 0 or 1.)

The resist material according to the present invention contains a compound represented by the following formula (1):wherein each R0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used.(in formula (0), each X independently represents an oxygen atom or a sulfur atom, or a non-crosslinked state, R1 represents a 2n-valent group having 1 to 30 carbon atoms, or a single bond, each R0 independently represents a straight, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, a straight, branched or cyclic alkenyl group having 2 to 30 carbon atoms, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group or a hydroxyl group, the alkyl group, the alkenyl group and the aryl group each optionally include a cyanato group, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group, a hydroxyl group, an ether bond, a ketone bond or an ester bond, each m1 is independently an integer of 0 to 4, in which at least one m1 is an integer of 1 to 4, each m2 is independently an integer of 0 to 3, n is an integer of 1 to 4, and each p is independently 0 or 1.)

The material for forming an underlayer film for lithography of the present invention contains a compound represented by the following general formula (1).(in formula (1), each X independently represents an oxygen atom or a sulfur atom, R1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, and each R2 independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, provided that at least one R2 represents a hydroxyl group, each m is independently an integer of 1 to 4, n is an integer of 1 to 4, and p is 0 or 1.)