Precursor compositions for the deposition of passive electronic features

a technology of electronic features and compositions, applied in the field of precursor compositions, can solve the problems of limited use of ptf for capacitors, inability to meet the demands of resistor applications, and limitations of traditional hybrid technologies, and achieve enhanced resolution control, good electrical characteristics, and high viscosity pastes

Inactive Publication Date: 2007-05-10
CABOT CORP
View PDF6 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0024] There exists a need for precursor compositions, particularly high viscosity pastes, for use in electronics, displays, and other applications. Further, there is a need for precursor compositions that provide low processing temperatures to allow deposition onto organic substrates while still providing features with good electrical characteristics. Furthermore, there exists a need for a precursor com...

Problems solved by technology

However, mixing rules for multi-component dielectric layers dictate the intrinsic limitations of this approach.
Hence, there is very limited use of PTF for capacitors, particularly for stable, high performance components.
Traditional hybrid technologies also have serious limitations for today's demanding resistor applications.
Screen-printed thick-film resistors for example have wide-ranging values, but their short current paths and the inherent limitations of the screen-printing resolution severely compromise their performance characteristics.
Thin-film resistors, while capable of high precision, are expensive to design an...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Precursor compositions for the deposition of passive electronic features

Examples

Experimental program
Comparison scheme
Effect test

example 1

Lead Zirconate Titanate (PZT)

[0368] The following precursors are mixed in the following ratios in toluene to form a solution: 23.8 wt. % Ti dimethoxy dineodecanoate; 21.4 wt. % Zr butoxide; and 54.8 wt. % Pb ethylhexanoate. The PZT precursor mixture decomposes at 450° C. as evidenced by TGA. Formation of crystalline PZT does not occur until processing at 500° C. for at least 30 minutes and preferably 90 minutes or more.

example 2

Zirconium Tin Titanate (ZST)

[0369] Precursors are mixed in the following ratios: 49.8 wt. % Ti isopropoxide triethylamine; 18.2 wt. % Zr ethylhexanoate; 5.9 wt. % Zr propoxide; and 26.1 wt. % Sn ethylhexanoate. The mixture was heated and found to decompose by 550° C. as evidenced by TGA. The crystallinity of the ZST is improved by post processing at greater than 500° C. for 60 minutes.

Example 3

Zirconium Tin Titanate (ZST)

[0370] Precursors are mixed in the following ratios: 50.9 wt. % Ti dimethoxy dineodecanoate; 19.3 wt. % Zr propoxide; 27.2 wt. % Sn ethylhexanoate; and 2.6 wt. % Zr ethylhexanoate. The composition was found to decompose by 550° C. as evidenced by TGA. The crystallinity of the ZST is improved by post processing at greater than 500° C. for 60 minutes.

example 3

Pb2Ta2O7

[0371] Precursors are mixed in the following ratios: 45.1 wt. % Ta ethoxide; 54.9 wt. % Pb ethylhexanoate; and dodecane as needed for solubility. The lead tantalate precursor decomposes by 450° C. as evidenced by TGA. Formation of crystalline Pb2Ta2O7 occurs by processing at 550° C. for one hour.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Precursor compositions for the fabrication of electronic features such as resistors and capacitors. The precursor compositions are formulated to have a low conversion temperature, such as not greater than about 350° C., thereby enabling the fabrication of such electronic features on a variety of substrates, including organic substrates such as polymer substrates.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation application of co-pending U.S. patent application Ser. No. 10 / 286,363, filed Nov. 1, 2002, which claims the benefit of U.S. Provisional Application No. 60 / 338,797 filed Nov. 2, 2001. This application is also related to U.S. patent application Ser. No. 10 / 265,296 entitled “PRECURSOR COMPOSITIONS FOR THE DEPOSITION OF ELECTRICALLY CONDUCTIVE FEATURES” and filed on Oct. 4, 2002. Each of the foregoing referenced patent applications is incorporated by reference herein as if set forth in its entirety.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to precursor compositions that are useful for the deposition of electronic features such as resistors and capacitors. The precursor compositions can have a low conversion temperature to enable low-temperature treatment of the compositions to form passive electronic features on a variety of substrates. [0004] 2. Desc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B05D3/02C09D11/00H01C17/065H01L21/288H01L21/314H01L21/316H05K1/03H05K1/09H05K1/16H05K3/10
CPCC09D11/30H01C17/06506H01C17/06533H01C17/06573H01L21/288H01L21/31691H05K1/0346H05K1/097H05K1/162H05K1/167H05K3/105H05K3/125H05K2203/013H05K2203/1142H05K2203/121H05K2203/125B33Y80/00B33Y10/00H01L21/02197
Inventor KODAS, TOIVO T.HAMPDEN-SMITH, MARK J.VANHEUSDEN, KARELDENHAM, HUGHSTUMP, AARON D.SCHULT, ALLEN B.ATANASSOVA, PAOLINAKUNZE, KLAUS
Owner CABOT CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap