AlN ceramic bonded copper substrate and preparation method thereof

A technology for copper-clad substrates and ceramic substrates, applied in the field of ceramic metallization, can solve problems such as difficult to achieve reliable bonding of AlN ceramic substrates and copper foils, and achieve the effects of improving thermal stress mismatch, easy bonding, and improving wettability.

Active Publication Date: 2014-05-28
NANJING ZHONGJIANG NEW MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the technical problem that the preparation method of AlN ceramic copper-clad substrate in the prior art is difficult to realize the reliable bonding of AlN ceramic substrate and copper foil

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The preparation method of this AlN ceramic copper-clad substrate comprises the following steps:

[0025] S1. Spray coating: use the spray coating method to spray and coat the surface of the cleaned AlN ceramic substrate with a thickness of 0.63 mm, so that a nanometer Cu is formed on the surface of the AlN ceramic substrate. 2 O coating, the thickness of the final required coating is controlled at 0.1mm;

[0026] S2. Sintering: After spraying, the AlN ceramic substrate with a compound coating formed on the surface is first sintered to a temperature of 1000°C under the protection of Ar, an inert gas with a slight oxygen content, and kept at a temperature of 40Min, and then heated at 1°C / min in the air The temperature is raised from 1000°C to 1090°C at a rate of 40 minutes. Then place it in a HCl solution with a mass concentration of 5% for 40 minutes to remove surface oxides. During the sintering process, the surface of the AlN ceramic substrate is oxidized to form Al ...

Embodiment 2

[0037] The preparation method of this AlN ceramic copper-clad substrate comprises the following steps:

[0038] S1. Spray coating: use the spray coating method to spray and coat the surface of the cleaned AlN ceramic substrate with a thickness of 0.38mm, so that a nanometer Cu is formed on the surface of the AlN ceramic substrate. 2 O coating, the thickness of the final required coating is controlled at 0.05mm;

[0039] S2. Sintering: After spraying, the AlN ceramic substrate with a compound coating formed on the surface is first placed in an inert gas Ar protection state with a slight oxygen content and sintered to a temperature of 900°C, kept for 10Min, and then heated at 1.5°C / min in the air The temperature was raised from 900°C to 1100°C at a rate of 10 minutes. Then place it in a HCl solution with a mass concentration of 5% for 10 minutes to remove surface oxides;

[0040] S3. Chemical pre-oxidation of copper foil: put the copper foil of appropriate size into Na with a ...

Embodiment 3

[0045] The preparation method of this AlN ceramic copper-clad substrate comprises the following steps:

[0046] S1. Spray coating: Spray coating on the surface of the cleaned AlN ceramic substrate with a thickness of 1.0 mm by spray coating, so that a nanometer Cu is formed on the surface of the AlN ceramic substrate. 2 O coating, the thickness of the final required coating is controlled at 0.15mm;

[0047] S2. Sintering: After spraying, the AlN ceramic substrate with a compound coating formed on the surface is first placed in an inert gas Ar protection state with a slight oxygen content and sintered to a temperature of 1000°C, kept for 60Min, and then heated at 1.2°C / min in the air The temperature is raised from 1000°C to 1080°C at a rate of 60 minutes. Then place it in a HCl solution with a mass concentration of 2.5% for 60 minutes to remove surface oxides.

[0048] S3. Chemical pre-oxidation of copper foil: Put the copper foil of appropriate size into K with a mass concen...

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Abstract

The invention provides an AlN ceramic bonded copper substrate which comprises an AlN ceramic substrate and copper foil bonded and connected onto the AlN ceramic substrate and is characterized in that a spinel structure compound modification layer is formed between the AlN ceramic substrate and the copper foil and comprises one or two of CuAlO2, CuAl2O4, Cu2O and CuO. The invention further provides a preparation method of the AlN ceramic bonded copper substrate. The method comprises the steps of spraying nano Cu2O on the surface of the AlN substrate, sintering in inert gas with a micro oxygen content and air sequentially, and then removing a surface oxide by a pickling manner. The prepared modification layer is tightly combined with matrix ceramic, and also has good affinity characteristic with the Cu foil. A uniform oxidation layer can be formed on the surface of the Cu foil by putting the Cu foil in a prepared solution at a certain temperature for specified time and more facilitates an AlN-DBC (direct bonded copper) technology.

Description

technical field [0001] The invention relates to an AlN ceramic copper-clad substrate and a preparation method thereof, belonging to the field of ceramic metallization. Background technique [0002] AlN ceramics are widely used in microelectronics, optoelectronics and other fields due to their excellent thermal conductivity, good dielectric constant and Si-matched thermal expansion coefficient. AlN ceramic surface metallization methods are various, such as electroless plating, DPC, brazing For power electronics, the direct copper method (DBC) is an ideal choice. AlN-DBC can meet the more stringent requirements of power electronic devices such as high thermal conductivity, high reliability, and high current. [0003] A notable feature of AlN ceramics is the corrosion resistance of molten metal, so it becomes more difficult to directly wet AlN ceramics by liquid phase. Therefore, it is necessary to modify the surface of AlN ceramics in the DBC process. In the traditional D...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/02
Inventor 井敏黄礼侃赵建光黄列武
Owner NANJING ZHONGJIANG NEW MATERIAL TECH
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