Preparation method of magnetic storage unit

CN120825955APending Publication Date: 2025-10-21CETHIK GRP
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Patent Information

Application Number
CN202410388275.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-04-01
Publication Date
2025-10-21

AI Technical Summary

Technical Problem

In the SOT-MRAM fabrication process, metal redeposition during the magnetic tunnel junction etching process causes short circuit problems, which are difficult to effectively solve with existing technologies.

Method used

Using multi-layer mask layer patterning technology, the magnetic tunnel junction stack and the spin-orbit moment stack are etched through the first and second mask layers respectively to reduce the area of ​​the magnetic tunnel junction. During the etching process, dielectric materials are filled to reduce the concentration of metal atomic gas and alleviate the problem of metal redeposition.

Benefits of technology

It effectively reduces metal redeposition during the magnetic tunnel junction etching process, improves bit yield, reduces metal atom gas concentration, prevents short circuits, and improves device performance.

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Abstract

The invention provides a preparation method of a magnetic storage unit, and the method comprises the steps: providing a substrate which is provided with a bottom electrode; forming a spin orbit moment providing layer, a magnetic tunnel junction lamination layer and a first mask layer on the substrate; patterning the first mask layer, and patterning the magnetic tunnel junction lamination layer and the spin orbit moment providing layer according to the patterned first mask layer to form a first intermediate structure; filling the first intermediate structure with a dielectric material and carrying out planarization processing to form a second intermediate structure; forming a second mask layer on the second intermediate structure; and carrying out patterning on the second mask layer, and carrying out patterning on the magnetic tunnel junction lamination according to the patterned second mask layer. According to the preparation method of the magnetic storage unit, the area of the metal film layer to be etched can be reduced in the etching process of the magnetic tunnel junction, the gas concentration of metal atoms is reduced, and the problem of metal redeposition in the etching process of the magnetic tunnel junction is relieved.
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