Preparation method of complex oxide interface one-dimensional system

By using pulsed laser deposition technology to prepare a complex oxide one-dimensional system on a single crystal substrate, the limitations of the complex oxide superlattice growth mode in the existing technology are solved, more flexible and efficient material growth is achieved, and the application of oxide interface advantages is promoted.

CN119710907APending Publication Date: 2025-03-28FUDAN UNIVERSITY
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Patent Information

Application Number
CN202411827594.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-12
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

The existing complex oxide superlattice mainly forms a longitudinal structure through layered growth, which limits the flexibility of manual regulation and makes it difficult to advance the interface advantages of oxides to a new level.

Method used

A one-dimensional complex oxide system is prepared on a single crystal substrate with a step structure using pulsed laser deposition technology. By designing different material areas with different proportional contents, the growth of the lateral structure is achieved and the physical state control ability is enhanced.

Benefits of technology

The preparation of a complex oxide interface one-dimensional system has been realized, the flexibility and selectivity of material growth have been expanded, and the physical basis of all oxide spintronic devices has been provided.

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Abstract

The invention discloses a preparation method of a complex oxide interface one-dimensional system. According to the method, a pulse laser deposition technology is utilized, based on a step structure of a substrate, a novel one-dimensional nano material of a complex oxide is prepared through a growth mode of flowing along a step, and the method comprises the steps that a material S is epitaxially grown on the substrate, the thickness of the material S is one step height, and the transverse width of the material S is L1; a material B is laterally and epitaxially grown on the substrate or the material S along the edge of the new step, the lateral width is L2, and the thickness is the height of one step; taking L1 + L2 as a period, and repeatedly growing for n periods; the steps are repeated, N repetitions are achieved in the longitudinal direction, and then preparation of the complex oxide novel interface one-dimensional system is achieved. The method disclosed by the invention develops a new material interface regulation and control way, can be popularized to other associated systems, and lays a physical foundation for research and development of all-oxide spinning electronic devices.
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