High-voltage side gate drive circuit capable of resisting noise interference

A gate drive circuit, high-voltage side technology, applied in the field of high-voltage power MOS gate drive and analog integrated circuits, can solve problems such as increasing the negative VS voltage, and achieve the effects of reducing power consumption, saving chip area, and facilitating integration

Active Publication Date: 2012-11-07
SOUTHEAST UNIV
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AI Technical Summary

Problems solved by technology

[0005] Aiming at the above-mentioned problem of noise interference, the present invention provides a high-voltage side gate drive circuit with simple circuit structure and anti-noise interference. The present invention can eliminate common-mode dv / dt interference noise and differential-mode noise, and can eliminate noise interference At the same time, it does not affect the transmission of normal signals, and at the same time increases the allowable negative VS voltage

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  • High-voltage side gate drive circuit capable of resisting noise interference
  • High-voltage side gate drive circuit capable of resisting noise interference
  • High-voltage side gate drive circuit capable of resisting noise interference

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Embodiment Construction

[0022]A high-voltage side gate drive circuit capable of resisting noise interference, comprising a high-voltage level shift circuit 1, a differential-mode noise elimination circuit 2, an RS flip-flop 3, an output driver stage circuit 4, a common-mode noise elimination circuit 5, and a high-voltage circuit The translation shift circuit 1 converts the input two-way low-voltage pulse signal into a high-voltage pulse signal output, and the high-voltage pulse signal enters the differential-mode noise elimination circuit 2 after passing through the common-mode noise elimination circuit 5, and the output signal of the differential-mode noise elimination circuit 2 passes through the RS The flip-flop 3 enters the output driver stage circuit 4, and the output driver stage circuit 4 outputs a drive signal to control the switch of the external power tube. It is characterized in that a common mode is provided between the high voltage level shift circuit 1 and the differential mode noise elim...

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Abstract

The invention provides a high-voltage side gate drive circuit capable of resisting noise interference. The high-voltage side gate drive circuit comprises a high-voltage level shift circuit, a differential-mode noise elimination circuit, an RS trigger and an output drive level circuit, wherein a low-side pulse signal is converted into a high-voltage pulse signal for output through the high-voltage level shift circuit; a common mode noise elimination circuit is connected between the output of the high-voltage level shift circuit and the input of the differential-mode noise elimination circuit; the common mode noise elimination circuit is used for eliminating a common mode noise signal generated in application; and the differential-mode noise elimination circuit eliminates the differential-mode noise introduced by process variations, outputs a normal pulse signal, reduces the normal pulse signal into a normal square signal through the RS trigger, outputs the square signal from the output drive level circuit and drives an external high-side power tube.

Description

technical field [0001] The invention belongs to the technical field of analog integrated circuits, relates to the technical field of high-voltage power MOS gate drive, and particularly relates to a high-voltage side gate drive circuit capable of resisting noise interference. Background technique [0002] Many power electronic chips or integrated circuit driver chip systems on the market now have high-voltage gate drive circuits, which use high-voltage level shift technology to realize low-voltage to high-voltage conversion to drive high-side power transistors. The high-voltage gate drive circuit is one of the typical circuits of the high-voltage integrated circuit (HVIC). This type of HVIC has a wide range of applications in the fields of motor drive, flat panel display, and other consumer electronics. It uses high-voltage and low-voltage compatible technology, and uses high-voltage LDMOS devices to convert low-voltage control signals into high-voltage control signals to dri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/003
Inventor 祝靖刘翠春卢云皓钱钦松孙伟锋陆生礼时龙兴
Owner SOUTHEAST UNIV
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