High-voltage side gate drive circuit capable of resisting noise interference

Abstract

The invention provides a high-voltage side gate drive circuit capable of resisting noise interference. The high-voltage side gate drive circuit comprises a high-voltage level shift circuit, a differential-mode noise elimination circuit, an RS trigger and an output drive level circuit, wherein a low-side pulse signal is converted into a high-voltage pulse signal for output through the high-voltage level shift circuit; a common mode noise elimination circuit is connected between the output of the high-voltage level shift circuit and the input of the differential-mode noise elimination circuit; the common mode noise elimination circuit is used for eliminating a common mode noise signal generated in application; and the differential-mode noise elimination circuit eliminates the differential-mode noise introduced by process variations, outputs a normal pulse signal, reduces the normal pulse signal into a normal square signal through the RS trigger, outputs the square signal from the output drive level circuit and drives an external high-side power tube.

Description

technical field [0001] The invention belongs to the technical field of analog integrated circuits, relates to the technical field of high-voltage power MOS gate drive, and particularly relates to a high-voltage side gate drive circuit capable of resisting noise interference. Background technique [0002] Many power electronic chips or integrated circuit driver chip systems on the market now have high-voltage gate drive circuits, which use high-voltage level shift technology to realize low-voltage to high-voltage conversion to drive high-side power transistors. The high-voltage gate drive circuit is one of the typical circuits of the high-voltage integrated circuit (HVIC). This type of HVIC has a wide range of applications in the fields of motor drive, flat panel display, and other consumer electronics. It uses high-voltage and low-voltage compatible technology, and uses high-voltage LDMOS devices to convert low-voltage control signals into high-voltage control signals to dri...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the above-mentioned problem of noise interference, the present invention provides a high-voltage side gate drive circuit with simple circuit structure and anti-noise interference. The present invention can eliminate common-mode dv / dt interference noise and differential-mode noise, and can eliminate noise interference At the same time, it does not affect the transmission of normal signals, and at the same time increases the allowable negative VS voltage

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