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A high-voltage side gate drive circuit and an integrated circuit

A gate drive circuit and high-voltage side technology, which is applied to electronic switches, electrical components, and electric pulse generation, can solve the problems of easy burning and poor reliability, and achieve the effects of eliminating influence, improving reliability, and avoiding the risk of false triggering

Active Publication Date: 2019-05-07
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention improves the existing technical problems of poor reliability and easy burning by providing a high-voltage side gate drive circuit and an integrated circuit

Method used

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  • A high-voltage side gate drive circuit and an integrated circuit
  • A high-voltage side gate drive circuit and an integrated circuit
  • A high-voltage side gate drive circuit and an integrated circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] In this embodiment, a high voltage side gate drive circuit is provided, such as figure 1 shown, including:

[0032] Double pulse generation circuit 1, high-level shift circuit 2, noise suppression circuit, flip-flop 5 and gate drive circuit 6; The noise suppression circuit includes a common mode noise suppression circuit 3 and a differential mode noise suppression circuit 4 connected in series; the The output end of double pulse generating circuit 1 is connected with the input end of described high level shift circuit 2, and the output end of described high level shift circuit 2 is connected with the input end of described noise suppression circuit; The output end is connected to the input end of the flip-flop 5; the output end of the flip-flop 5 is connected to the input end of the gate drive circuit 6;

[0033]The input signal IN is input to the double-pulse generation circuit 1 to generate two low-voltage pulse signals In_R and In_S as the input of the high-level sh...

Embodiment 2

[0055] This embodiment provides an integrated circuit, including the high-voltage-side gate drive circuit described in Embodiment 1, and a power transistor, and the power transistor is connected to an output end of the high-voltage-side gate drive circuit;

[0056] The input signal outputs a switch control signal to the power transistor after passing through the high voltage side gate drive circuit, so as to control the switch of the power transistor.

[0057] The high-voltage side gate drive circuit is integrated into the integrated circuit using a high-voltage and low-voltage compatible process.

[0058] The gate drive circuit on the high voltage side of this embodiment can be integrated with the overall integrated circuit using a process compatible with high and low voltage, and the process is simple. Moreover, since the structure of the gate drive circuit on the high-voltage side is relatively simple, the layout area occupied by the overall circuit is relatively small.

...

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PUM

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Abstract

The invention discloses a high-voltage side gate drive circuit and an integrated circuit. The high-voltage side gate drive circuit comprises a double-pulse generation circuit, a high-level shift circuit, a noise suppression circuit, a trigger and a gate drive circuit, The noise suppression circuit comprises a common-mode noise suppression circuit and a differential-mode noise suppression circuit which are connected in series; The output end of the double-pulse generation circuit is connected with the input end of the high-level shift circuit, and the output end of the high-level shift circuitis connected with the input end of the noise suppression circuit; The output end of the noise suppression circuit is connected with the input end of the trigger; And the output end of the trigger is connected with the input end of the gate driving circuit. According to the circuit provided by the invention, the technical problems of poor reliability and easy burning of the existing driving circuitare improved, and the circuit reliability is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a high-voltage side gate drive circuit and an integrated circuit. Background technique [0002] With the development of new power devices and process technologies in recent decades, high voltage power integrated circuits (High Voltage Integrated Circuit, HVIC) have developed rapidly. HVIC integrates high voltage power devices and low voltage logic control signal modules into a single chip. , is the product of the combination of power electronics technology and microelectronics technology, and is widely used in many applications such as motor drive, switching power supply, automotive electronics, flat panel display drive, etc. The general technological development trend of HVIC is higher operating frequency and higher power , lower power consumption and more complete functions. [0003] The high-voltage half-bridge driver chip is mainly used to drive the power tu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K3/013H03K17/16
CPCY02B70/10
Inventor 彭锐蔡小五刘海南罗家俊汤红菊许东升
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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