A high-voltage side gate drive circuit with anti-noise interference

Abstract

A high-voltage side gate drive circuit with anti-noise interference, including a high-voltage level shift circuit, an RS latch and a driver, the high-voltage level shift circuit converts two input low-voltage pulse signals into two high-voltage pulse signal outputs, The two high-voltage pulse signals are respectively processed and enter the RS latch, the output of the RS latch is sent to the driver, and the driver outputs a driving signal to control the switch of the external power tube. The invention improves the high-voltage level shifting circuit. The improved high-voltage level shifting circuit includes two completely identical independent parts, and each independent part includes two LDMOS transistors, a delay unit, and a Nano Zener tube, a capacitor, a resistor and a medium voltage PMOS tube. The present invention can eliminate d V / dt interferes with noise and differential mode noise, and can eliminate noise interference while not affecting normal signal transmission, and at the same time increases the allowable negative VS voltage.

Description

technical field [0001] The invention relates to a high-voltage power MOS gate drive technology, in particular to a high-voltage floating gate drive circuit with anti-noise interference, which belongs to the technical field of analog integrated circuits. Background technique [0002] Many power electronic chips or integrated circuit driver chip systems on the market now have high-voltage gate drive circuits, which use high-voltage level shift technology to realize low-voltage to high-voltage conversion to drive high-side power transistors. The high-voltage gate drive circuit is one of the typical circuits of the high-voltage integrated circuit (HVIC). This type of HVIC has a wide range of applications in the fields of motor drive, flat panel display, and other consumer electronics. It uses high-voltage and low-voltage compatible technology, and uses high-voltage LDMOS devices to convert low-voltage control signals into high-voltage control signals to drive high-end circuits. ...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problem of noise interference in the above-mentioned prior art, the present invention provides a high-voltage-side gate drive circuit with anti-noise interference, which can eliminate the d V / dt interference noise and differential mode noise, and can eliminate noise interference while not affecting normal signal transmission, and at the same time increase the allowable negative VS voltage

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