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A high-voltage side gate drive circuit with anti-noise interference

A gate drive circuit and high-voltage side technology, which is applied in the field of high-voltage power MOS gate drive and high-voltage floating gate drive circuit, can solve problems such as noise interference, and achieve the effects of increasing working ability, reducing power consumption, and shortening the conduction time

Active Publication Date: 2016-06-22
SOUTHEAST UNIV
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Problems solved by technology

[0005] Aiming at the problem of noise interference in the above-mentioned prior art, the present invention provides a high-voltage-side gate drive circuit with anti-noise interference, which can eliminate the d V / dt interference noise and differential mode noise, and can eliminate noise interference while not affecting normal signal transmission, and at the same time increase the allowable negative VS voltage

Method used

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  • A high-voltage side gate drive circuit with anti-noise interference
  • A high-voltage side gate drive circuit with anti-noise interference
  • A high-voltage side gate drive circuit with anti-noise interference

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Embodiment Construction

[0026] like figure 1, the traditional high-voltage side gate drive circuit includes a high-voltage level shift circuit 001, a filter circuit 002, an RS latch 003, and a driver 004. The high-voltage level shift circuit converts the input two-way low-voltage pulse signal into a high-voltage pulse signal output. The high-voltage pulse signal enters the RS latch after passing through the filter circuit. The output of the RS latch is connected to the driver, and the driver outputs the OUT drive signal. Control the switch of the external power tube. In order to reduce power consumption and improve the reliability of the circuit, the high-voltage level shift circuit is driven by a dual-channel narrow pulse working mode, and the narrow pulse width is reduced as much as possible under the premise of ensuring that the LDMOS transistor can be driven to reduce power consumption. Among them, the high-voltage level shift circuit is mainly used to convert the low-voltage pulse signal into ...

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Abstract

A high-voltage side gate drive circuit with anti-noise interference, including a high-voltage level shift circuit, an RS latch and a driver, the high-voltage level shift circuit converts two input low-voltage pulse signals into two high-voltage pulse signal outputs, The two high-voltage pulse signals are respectively processed and enter the RS latch, the output of the RS latch is sent to the driver, and the driver outputs a driving signal to control the switch of the external power tube. The invention improves the high-voltage level shifting circuit. The improved high-voltage level shifting circuit includes two completely identical independent parts, and each independent part includes two LDMOS transistors, a delay unit, and a Nano Zener tube, a capacitor, a resistor and a medium voltage PMOS tube. The present invention can eliminate d V / dt interferes with noise and differential mode noise, and can eliminate noise interference while not affecting normal signal transmission, and at the same time increases the allowable negative VS voltage.

Description

technical field [0001] The invention relates to a high-voltage power MOS gate drive technology, in particular to a high-voltage floating gate drive circuit with anti-noise interference, which belongs to the technical field of analog integrated circuits. Background technique [0002] Many power electronic chips or integrated circuit driver chip systems on the market now have high-voltage gate drive circuits, which use high-voltage level shift technology to realize low-voltage to high-voltage conversion to drive high-side power transistors. The high-voltage gate drive circuit is one of the typical circuits of the high-voltage integrated circuit (HVIC). This type of HVIC has a wide range of applications in the fields of motor drive, flat panel display, and other consumer electronics. It uses high-voltage and low-voltage compatible technology, and uses high-voltage LDMOS devices to convert low-voltage control signals into high-voltage control signals to drive high-end circuits. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/003
Inventor 孙伟锋祝靖张允武陈健易扬波陆生礼时龙兴
Owner SOUTHEAST UNIV
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