31results about How to "Stable reference voltage" patented technology

A band-gap reference voltage generator is provided. N-channel metal oxide semiconductor (NMOS) transistors are respectively connected to bipolar transistors in parallel. A Complementary To Absolute Temperature (CTAT) voltage that is inversely proportional to absolute temperature is reduced by a threshold voltage of the NMOS transistor. A weight for a temperature coefficient of a Proportional To Absolute Temperature (PTAT) voltage that is directly proportional to absolute temperature is reduced and a resistance ratio for a temperature coefficient of 0 is reduced by about ½, thereby miniaturizing the band-gap reference voltage generator. A reference voltage lower than or equal to 1 V can be provided by resistors respectively connected to the bipolar transistors in parallel.

The invention provides a system and method for adjusting the reference current of a sense circuit and a sense circuit. The system at least comprises: a high-voltage detection module for detecting a high-voltage signal actually generated by a high-voltage generation circuit, when a target storage unit is subjected to an erasing operation or a write operation, and transferring the detected high-voltage signal into a corresponding control signal when the erasing operation or the write operation is over; a latch module used for latching the control signal generated by the high-voltage detection module and releasing the latched control signal when the target storage unit is subjected to a fetch operation; and a reference current adjustable module used for controlling and generating a corresponding reference current according to the control signal released by the latch module. According to the actual high voltage generated from the high-voltage generation circuit, the reference current of the sense circuit is adjusted, thereby preventing the situation that the break-over current of a floating-gate transistor with electron injection is larger than the reference current.

The invention discloses a multi-DC motor forward series control system and method, wherein 2*(n+1) IGBT modules are connected in series in pairs to form n+1 bridge arms; the n+1 bridge arms are connected in parallel with positive and negative poles of a DC power supply, and n DC motors which are serially connected in a forward manner are respectively connected in series with the n+1 bridge arms; the n DC motors are connected to a reference voltage synthesizer through two-stage PI controllers via a speed sensor, a current sensor and a speed adjustment module in sequence, and the reference voltage synthesizer is connected to n+1 phase inverters by a PWM pulse generating unit; the n+1 phase inverters are connected to the reference voltage synthesizer via current regulating modules and one-stage PI controllers, and are connected to the PWM pulse generating unit through the reference voltage synthesizer; and pulse control signals generated by the PWM pulse generating unit control the on/offof the 2*(n+1) IGBT modules to drive the n DC motors. The number of circuit elements is small, the structure is simple, the performance stability is reliable, and the wide use value is achieved.

A Pt100 temperature sensor-based novel high-precision temperature measurement circuit of the present invention is characterized in that two constant current sources are designed at the two ends of a Pt100 temperature sensor, so that the current of the circuit is constant, and the circuit is not interfered by the current fluctuation in the circuit easily. Then a two-stage amplification circuit is designed to amplify a signal acquired by the Pt100 temperature sensor, and a constant voltage source is added in each stage of amplification circuit to provide a stable reference voltage to the circuit. The Pt100 temperature sensor-based novel high-precision temperature measurement circuit of the present invention is high in temperature measurement accuracy and stable and reliable in system operation, and enables the performance temperature and the error to satisfy the actual requirements. The Pt100 temperature sensor-based novel high-precision temperature measurement circuit comprises two constant current source modules, the Pt100 temperature sensor, the two-stage amplification circuit, a main control chip, a JTAG downloading module and a display module, and the structural key points of the circuit are that the output of the two constant current source modules is connected with the input of the Pt100 temperature sensor, the output of the Pt100 temperature sensor is connected with the two-stage amplification circuit, the output of the two-stage amplification circuit is connected with one input end of the main control chip, the other input end of the main control chip is connected with the JTAG module, and one output end of the main control chip is connected with the display module.

The invention discloses a control system and method with three direct-current motors in forward-direction serial connection. The system is characterized in that eight IGBT modules form four bridge arms in a two-two serial connection manner, the four bridge arms are parallelly connected to the positive electrode and the negative electrode of a direct-current power supply, the three direct-current motors in forward-direction serial connection are serially connected with the four bridge arms, the three direct-current motors are connected with a reference voltage synthesizer sequentially through aspeed sensor, a current sensor, a speed adjusting module and a secondary PI controller, the reference voltage synthesizer is connected with a four-phase inverter through a PWM pulse generating unit,the four-phase inverter is connected with the reference voltage synthesizer through a current adjusting module and a primary PI controller, the four-phase inverter is connected to the PWM pulse generating unit through the reference voltage synthesizer, and pulse control signals generated by the PWM pulse generating unit controls the on and off of the eight IGBT modules to drive the three direct-current motors to operate. The control system is few in used circuit components, simple in structure, stable and reliable in performance and worthy of popularization and application.

A differential operational amplifier, which comprises: a voltage adjusting module, coupled between a first predetermined voltage source and a second predetermined voltage source, for adjusting a first voltage via a first voltage adjusting value to generate a first adjusted voltage, and for adjusting a second voltage via a second voltage adjusting value to generate a second adjusted voltage, wherein the first voltage adjusting value and the second voltage adjusting value change corresponding to a temperature; and a differential signal computing module, coupled between the first predetermined voltage source and the second predetermined voltage source, for generating an output voltage according the first adjusted voltage and the second adjusted voltage.

A method of manufacturing a flash memory device, wherein a first insulating layer is formed over a semiconductor substrate. First insulating layer is etched to form a resistor hole. A first conductive layer is formed to fill the resistor hole and is planarized to form a resistor. A second insulating layer id formed over the first insulating layer including the resistor. A metal contact hole is formed by performing the etching process in the second insulating layer and is connected to the resistor. A second conductive layer is formed to fill the metal contact hole.

In a bandgap reference voltage generating circuit having first, second and third unitary circuits connected in parallel between a power supply voltage and a ground, there is added a fourth unitary circuit including an n-channel FET turned on in response to a bias voltage applied to a gate of the n-channel FET. The second unitary circuit is connected to the fourth unitary circuit through a capacitor having one end connected to a drain of the n-channel FET. When the bias voltage is applied to turn on the n-channel FET of the fourth unitary circuit, since the potential of the one end of the capacitor is dropped, a gate potential of n-channel FETs included in the first and second unitary circuits and operating in a weak inversion condition quickly becomes definite, so that a reference voltage can be generated quickly.

The invention discloses a high-precision hybrid integrated circuit test frame isolation protection structure, which relates to the technical field of circuit test auxiliary structures. The high-precision hybrid integrated circuit test frame isolation protection structure integrates a single-chip microcomputer, a test chip, a relay, an isolation optocoupler and a Handle interface on a circuit substrate, realizes short circuit detection between a test frame power supply and the ground and isolation between the test frame power supply and a to-be-tested chip power supply by utilizing the optocoupler, can prevent the chip from being damaged by hot plugging, facilitates the installation and improves the use efficiency, isolates all analog power supplies and digital power supplies as well as analog grounds and digital grounds by means of the optocoupler, suppresses common-mode interference, avoids common-mode interference generated during integrated design, ensures system signal stability and normal overall operation, reduces the system size, decreases the cost, improves the efficiency, can measure whether the power supply of the chip and the ground are short-circuited or not, and isolates the power supply and an instruction signal by adopting the optocoupler, so that crosstalk is prevented.

The invention discloses a step-down voltage dividing bias circuit based on an in-well high-voltage high-precision polycrystalline resistor. The bias circuit includes two high-voltage-resistance high-precision polycrystalline resistor voltage dividing circuits, voltage self-bias circuits, bipolar composite triodes, series connection voltage dividing triodes, a series connection resistor voltage dividing circuit and a current bias circuit. The two high-voltage-resistance high-precision polycrystalline resistor voltage dividing circuits are in series connection, and are used for obtaining high voltage from a high-voltage port VDD, and obtaining sampling voltage VK after voltage dividing and step-down; stable voltage VQ is generated after the sampling voltage VK passes through the voltage self-bias circuits for voltage regulation; constant low-voltage bias voltage VCC is output after the stable voltage VQ passes through the bipolar composite triodes and the series connection voltage dividing triodes for voltage step-down and fine-adjustment; reference voltage VREF of various values is obtained after the constant bias voltage VCC passes through the series connection resistor voltage dividing circuit for voltage dividing; and at the same time, the current bias circuit utilizes the constant bias voltage VCC to produce multiple stable bias currents IBAS. An entire bias circuit networkincreases a circuit integration degree, reduces a chip area, and reduces costs.

A bias circuit disclosed in the invention includes a first transistor, a second transistor, a first resistor and a second resistor. The first end of the first transistor is coupled to a first voltagesource. One end of the first resistor is coupled to the second end of the first transistor, and the other end of the first resistor is coupled to the control terminal of the first transistor. The first end of the second transistor is coupled to a second voltage source, and the second end of the second transistor is coupled to the control terminal of the first transistor. One end of the second resistor is coupled to the other end of the first resistor, and the other end of the second resistor is coupled to the control terminal of the second transistor. After the first transistor and the secondtransistor are in conduction via the first voltage source and the second voltage source respectively, when the first voltage source or the second voltage source changes, current flowing through the first transistor, current flowing through the second transistor and bias current maintain unchanged.

The invention provides a reference voltage generating circuit and a semiconductor memory applying the reference voltage generating circuit. The reference voltage generating circuit comprises a first voltage division circuit used for producing a reference voltage and a noise detection circuit, wherein the first voltage division circuit comprises a first working mode and a second working mode; in the first working mode, the first voltage division circuit comprises a first resistor and a second resistor which are connected in series, and the reference voltage is produced at a joint between the first resistor and the second resistor; and in the second working mode, the first voltage division circuit also comprises a third resistor and a fourth resistor, the third resistor is connected with thefirst resistor in parallel, and the fourth resistor is connected with the second resistor in parallel. By virtue of the technical scheme of the invention, response time of the reference voltage can be shortened, and a stable reference voltage is provided for a circuit.

The invention discloses a pipelined analog-to-digital converter. The pipelined analog-to-digital converter comprises a sub analog-to-digital converter, a multiplication digital-to-analog converter anda decoder, and the decoder provides a ground signal for the multiplication digital-to-analog converter. The sub-analog-to-digital converter is electrically connected with a ground pad through a firstmetal wire, and the decoder is electrically connected with the ground pad through a second metal wire.

The invention discloses an air humidity indication circuit, and belongs to the field of test circuits. The air humidity indication circuit comprises a humidity detection circuit, a signal amplification circuit, an impedance transformation circuit and a display circuit; the first output end of the humidity detection circuit is connected with the first input end of the impedance transformation circuit; the second output end of the humidity detection circuit is connected with the second input end of the signal amplification circuit; the third output end of the humidity detection circuit is connected with the third input end of the signal amplification circuit; the fourth output end of the signal amplification circuit is connected with the fourth input end of the display circuit; and the fifth output end of the impedance transformation circuit is connected with the fifth input end of the display circuit.

The invention provides a building perturbation hardware detecting system based on a big data cloud platform. The building perturbation hardware detecting system comprises a strain gage bridge assembly, a transconductance temperature testing circuit, a data transmission assembly and a power supply module. The strain gage bridge assembly, the transconductance temperature testing circuit and the power supply module are connected with the data transmission assembly. According to the building perturbation hardware detecting system, a strain pressure sheet is used as a perturbation sensor, so that cost is low and precision is high. According to the characteristic that the perturbation sensor can be affected by temperatures easily, the temperature compensation function is added in a hardware system, and thus the detection progress of the system for building detouring further accelerated. An MT7620 main control chip with the WiFi function is adopted, and the advantages of being high in data transfer rate, low in power consumption, capable of enabling the system to be connected into the wireless Internet and the like are achieved. A small-sized solar cell is used for supplying electricity, and long-term work of the system in the open air and outside the floor can be guaranteed.