Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bias circuit

A bias circuit and bias current technology, applied to electrical components, adjusting electrical variables, amplifiers, etc., can solve the problems that the chip occupies a large area, is not cost-effective, and the circuit structure of the bias circuit is complex, so as to maintain normal The effect of operation

Active Publication Date: 2018-10-09
RICHWAVE TECH CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, relatively speaking, if the design of the bias circuit in the integrated circuit is carried out using the III-V process, it is very difficult to design the bias circuit by setting the operational amplifier.
Even if it can be produced, the circuit structure of this bias circuit will be very complicated, and it will occupy a large area on the chip, which is not cost-effective

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bias circuit
  • Bias circuit
  • Bias circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Various exemplary embodiments will be described more fully hereinafter with reference to the accompanying drawings, in which some exemplary embodiments are shown. However, inventive concepts may be embodied in many different forms and should not be construed as limited to the illustrative embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. Like numerals indicate like components throughout the various figures of the specification.

[0030] The bias circuit provided by the present invention will be described below with multiple embodiments, however, the following embodiments are not intended to limit the present invention.

[0031] An embodiment of a bias circuit

[0032] Please refer to Figure 1A and Figure 1B , Figure 1A and Figure 1B is a circuit diagram of a bias circuit according to an exemplar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A bias circuit disclosed in the invention includes a first transistor, a second transistor, a first resistor and a second resistor. The first end of the first transistor is coupled to a first voltagesource. One end of the first resistor is coupled to the second end of the first transistor, and the other end of the first resistor is coupled to the control terminal of the first transistor. The first end of the second transistor is coupled to a second voltage source, and the second end of the second transistor is coupled to the control terminal of the first transistor. One end of the second resistor is coupled to the other end of the first resistor, and the other end of the second resistor is coupled to the control terminal of the second transistor. After the first transistor and the secondtransistor are in conduction via the first voltage source and the second voltage source respectively, when the first voltage source or the second voltage source changes, current flowing through the first transistor, current flowing through the second transistor and bias current maintain unchanged.

Description

technical field [0001] The present invention relates to a bias circuit, in particular to a bias circuit capable of providing a stable reference voltage or bias current. Background technique [0002] As far as the design of the bias circuit in the integrated circuit is concerned, generally speaking, if the SOI (Silicon On Insulator) process or the Complementary Metal Oxide Semiconductor (CMOS) process is used, the setting of the operational amplifier will be used to set the bias voltage. The reference voltage to be generated by the voltage circuit is locked at a voltage value that meets the operating requirements of the load. This method is very easy and convenient when using SOI process or complementary metal oxide semiconductor process to design the bias circuit in the integrated circuit. intuitive. However, relatively speaking, it is very difficult to design the bias circuit by using an operational amplifier when the bias circuit in the integrated circuit is designed usin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G05F1/56
CPCG05F1/561G05F3/16H03F1/223H03F1/301H03F2200/18H03F2200/21H03F2200/294H03F2200/451H01L27/0629H03F1/302H03F5/00
Inventor 陈智圣彭天云林昭毅
Owner RICHWAVE TECH CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products