System and method for adjusting reference current of sense circuit and sense circuit

Abstract

The invention provides a system and method for adjusting the reference current of a sense circuit and a sense circuit. The system at least comprises: a high-voltage detection module for detecting a high-voltage signal actually generated by a high-voltage generation circuit, when a target storage unit is subjected to an erasing operation or a write operation, and transferring the detected high-voltage signal into a corresponding control signal when the erasing operation or the write operation is over; a latch module used for latching the control signal generated by the high-voltage detection module and releasing the latched control signal when the target storage unit is subjected to a fetch operation; and a reference current adjustable module used for controlling and generating a corresponding reference current according to the control signal released by the latch module. According to the actual high voltage generated from the high-voltage generation circuit, the reference current of the sense circuit is adjusted, thereby preventing the situation that the break-over current of a floating-gate transistor with electron injection is larger than the reference current.

Description

technical field [0001] The invention relates to the field of memory technology, in particular to a system and method for adjusting the reference current of a readout circuit and a readout circuit. Background technique [0002] EEPROM (Electrically Erasable Programmable Read-Only Memory, Electrically Erasable Programmable Read-Only Memory) is a memory chip that does not lose data after power failure. It can erase existing information on a computer or a special device, reprogram or rewrite). EEPROM is a special form of flash memory that is plug-and-play and can be modified without removing it from the computer. In an EEPROM, it can be reprogrammed frequently while the computer is in use. EEPROM is usually erased and reprogrammed using higher than normal voltages in personal computers, and is a type of read-only memory that can be changed by the user. [0003] The target storage unit of EEPROM adopts a floating gate transistor with a floating gate structure, which stores dat...

AI Technical Summary

Problems solved by technology

However, the actual high voltage generated by the high voltage generating circuit may not reach the ideal high voltage value due to process deviation and other reasons, but is much lower than the ideal value. At this time, the conduction current of the floating gate transistor that injects electrons will increase. If so If the conduction current is greater than the preset reference current, there will be misjudgment of the read data, resulting in data detection failure

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